US6319769B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Capacitor in a semiconductor device and a fabricating method thereof
Assignee: SK Hynix Inc
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Filing: 2000-01-20
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Granted: 2001-11-20
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Expires: 2020-01-20
Abstract
Abstract The present invention relates to a capacitor in a semiconductor device and a fabricating method thereof. More particularly, the invention relates to a method of forming a storage electrode of a capacitor in a semiconductor device and a fabricating method thereof which provide a sufficient electric charge capacitance for a highly-integrated memory device and which reduces the step difference between cell and peripheral areas. In preferred embodiments, the storage electrode has a plurality of hemispherical protruding parts, and an electrically conductive layer formed on the protruding parts. The electrically conductive layer prevents the formation of an oxide layer between the storage electrode and a dielectric layer formed over the storage electrode.
Inventors
- 👤 Bok-Won Cho
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:23
CPC Classifications
H; H10; H10B; H10B12/00; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/712
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
134 words
A method of fabricating a capacitor, comprising: forming a contact hole by removing a portion of an insulating layer formed on a substrate, wherein the substrate has an impurity diffusion region, and wherein the contact hole exposes at least a portion of the impurity diffusion region; forming an electrically conductive plug in the contact hole, wherein the electrically conductive plug is in electrical contact with the impurity diffusion region; forming a first electrode on the insulating layer and the electrically conductive plug; forming a tungsten (W) layer to a thickness of about 50 to 200 Å on the first electrode by flowing WF 6 gas at about 250 to 500° C. for about 3 to 20 minutes; forming a dielectric layer on the tungsten layer; and forming a second electrode on the dielectric layer.
Claim 2
Independent Claim
134 words
A method of fabricating a capacitor, comprising: forming a contact hole by removing a portion of an insulating layer formed on a substrate, wherein the substrate has an impurity diffusion region, and wherein the contact hole exposes at least a portion of the impurity diffusion region; forming an electrically conductive plug in the contact hole, wherein the electrically conductive plug is in electrical contact with the impurity diffusion region; forming a first electrode on the insulating layer and the electrically conductive plug; forming a tungsten (W) layer to a thickness of about 50 to 200 Å on the first electrode by flowing WF 6 gas at about 250 to 500° C. for about 3 to 20 minutes; forming a dielectric layer on the tungsten layer; and forming a second electrode on the dielectric layer.
Claim 3
Dependent Claim
74 words
The method of fabricating a capacitor according to claim 1 , wherein the forming of the first electrode comprises: forming a first portion of the first electrode that is in electrical contact with an upper surface of the electrically conductive plug and that extends to a surface of the insulating layer; and forming a second portion of the first electrode on the first portion, said second portion electrode comprising a plurality of protruding parts.
Claim 4
Dependent Claim
24 words
The method of fabricating a capacitor according to claim 2 , wherein the first portion of the first electrode is formed with doped silicon.
Claim 5
Dependent Claim
19 words
The method of fabricating a capacitor according to claim 2 , wherein the protruding parts comprise hemispherical silicon grains.
Claim 6
Dependent Claim
30 words
The method of fabricating a capacitor according to claim 2 , further comprising forming a barrier layer between the first portion of the first electrode and the electrically conductive plug.
Claim 7
Dependent Claim
39 words
The method of fabricating a capacitor according to claim 5 , wherein the electrically conductive plug is formed so that it is recessed into the insulating layer, and wherein the barrier layer is formed on the electrically conductive plug.
Claim 8
Dependent Claim
24 words
The method of fabricating a capacitor according to claim 1 , wherein the tungsten layer is formed with a substance which prevents oxygen penetration.
Claim 9
Dependent Claim
28 words
The method of fabricating a capacitor according to claim 1 , wherein the forming of the dielectric layer comprises forming a layer of Ta 2 O 5 .
Claim 10
Dependent Claim
24 words
The method of fabricating a capacitor according to claim 1 , wherein the forming of the second electrode comprises forming a layer of TiN.
Claim 11
Dependent Claim
20 words
The method of fabricating a capacitor according to claim 1 , wherein the electrically conductive plug is formed with W.
Claim 12
Independent Claim
92 words
A method of fabricating a capacitor, comprising: forming a first electrode over a substrate; forming a plurality of hemispherical protruding parts on the first electrode by flowing SiH 4 gas over the first electrode under a vacuum state that ranges from approximately 1.0E(−7) Torr to approximately 5.0E(−8) Torr; forming a dielectric layer over the first electrode including the plurality of hemispherical protruding parts; annealing the dielectric layer while substantially preventing an insulating material from forming between the first electrode and the dielectric layer; and forming a second electrode over the dielectric layer.
Claim 13
Independent Claim
92 words
A method of fabricating a capacitor, comprising: forming a first electrode over a substrate; forming a plurality of hemispherical protruding parts on the first electrode by flowing SiH 4 gas over the first electrode under a vacuum state that ranges from approximately 1.0E(−7) Torr to approximately 5.0E(−8) Torr; forming a dielectric layer over the first electrode including the plurality of hemispherical protruding parts; annealing the dielectric layer while substantially preventing an insulating material from forming between the first electrode and the dielectric layer; and forming a second electrode over the dielectric layer.
Claim 14
Dependent Claim
20 words
The method according to claim 4 , wherein the dielectric layer comprises Ta 2 O 5−x before the annealing step.
Claim 15
Dependent Claim
77 words
The method according to claim 12 , wherein the annealing of the dielectric layer while substantially preventing an insulating material from forming between the first electrode and the dielectric layer comprises: forming a barrier to oxygen between the first electrode and the dielectric layer; and annealing the dielectric layer in an oxygen atmosphere, wherein said barrier to oxygen prevents the formation of an oxide material between the first electrode and the dielectric layer during the annealing step.
Claim 16
Dependent Claim
36 words
The method according to claim 13 , wherein the forming of the barrier to oxygen between the first electrode and the dielectric layer comprises forming a metal layer between the first electrode and the dielectric layer.
Claim 17
Independent Claim
116 words
A method of fabricating a capacitor, comprising: forming a first electrode over a substrate; forming a plurality of hemispherical protruding parts on the first electrode by flowing SiH 4 gas over the first electrode under a vacuum state that ranges from approximately 1.0E(−7) Torr to approximately 5.0E(−8) Torr; forming a tungsten (W) layer to a thickness of about 50 to 200 Å on the first electrode including the plurality of hemispherical portions by flowing WF 6 gas at about 250 to 500° C. for about 3 to 20 minutes; forming a dielectric layer over the first electrode including the plurality of hemispherical portions and the tungsten layer; and forming a second electrode on the dielectric layer.
Claim 18
Independent Claim
116 words
A method of fabricating a capacitor, comprising: forming a first electrode over a substrate; forming a plurality of hemispherical protruding parts on the first electrode by flowing SiH 4 gas over the first electrode under a vacuum state that ranges from approximately 1.0E(−7) Torr to approximately 5.0E(−8) Torr; forming a tungsten (W) layer to a thickness of about 50 to 200 Å on the first electrode including the plurality of hemispherical portions by flowing WF 6 gas at about 250 to 500° C. for about 3 to 20 minutes; forming a dielectric layer over the first electrode including the plurality of hemispherical portions and the tungsten layer; and forming a second electrode on the dielectric layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-11-19 | 2005-05-21 | 2005-11-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-11-19 | 2009-05-21 | 2009-11-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-11-19 | 2013-05-21 | 2013-11-20 | $7700.00 | Window Closed / Lapsed |