Patent US6319730B1 successfully refreshed from Google Patents.
US6319730B1
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Method of fabricating a semiconductor structure including a metal oxide interface
Assignee: NXP USA Inc
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Filing: 1999-07-15
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Granted: 2001-11-20
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Expires: 2019-07-15
Abstract
Abstract A method for fabricating a semiconductor structure including the steps of providing a silicon substrate ( 10 ) having a surface ( 12 ); forming amorphous silicon dioxide ( 14 ) on the surface ( 12 ) of the silicon substrate ( 10 ); providing a metal oxide ( 18 ) on the amorphous silicon dioxide ( 14 ); heating the semiconductor structure to form an interface comprising a seed layer ( 20 ) adjacent the surface ( 12 ) of the silicon substrate ( 10 ); and forming one or more layers of a high dielectric constant oxide ( 22 ) on the seed layer ( 20 ).
Inventors
- 👤 Jamal Ramdani
- 👤 Ravindranath Droopad
- 👤 Zhiyi Yu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:52
CPC Classifications
H; H10; H10P; H10P95/00; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/69398; H10P14/63; H10P14/6302; H10P14/6322; H10P14/6326; H10P14/6328; H10P14/6329; H10P14/6334; H10P14/6349; H10P14/66; H10P14/662; H10P14/6921; H10P14/69215; H10P14/6928; H10P14/693; H10P14/6934; H10P14/6939; H10P14/69392
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
109 words
A method of fabricating a semiconductor structure comprising the steps of: providing a silicon substrate having a surface; forming on the surface of the silicon substrate a seed layer comprising a single crystal silicate material, comprising the steps of: forming on the silicon substrate a silicon oxide layer having a surface; depositing a metal oxide on the surface of the silicon oxide layer; and heating the silicon oxide layer and the metal oxide thereby converting substantially all of the silicon oxide layer and metal oxide into the single crystal silicate material; and forming one or more layers of a single crystal high dielectric constant oxide on the seed layer.
Claim 2
Independent Claim
109 words
A method of fabricating a semiconductor structure comprising the steps of: providing a silicon substrate having a surface; forming on the surface of the silicon substrate a seed layer comprising a single crystal silicate material, comprising the steps of: forming on the silicon substrate a silicon oxide layer having a surface; depositing a metal oxide on the surface of the silicon oxide layer; and heating the silicon oxide layer and the metal oxide thereby converting substantially all of the silicon oxide layer and metal oxide into the single crystal silicate material; and forming one or more layers of a single crystal high dielectric constant oxide on the seed layer.
Claim 3
Dependent Claim
22 words
The method of fabricating a semiconductor structure of claim 1 wherein the forming the seed layer step includes forming a 2×1 reconstruction.
Claim 4
Dependent Claim
26 words
The method of fabricating a semiconductor structure of claim 1 wherein the step of forming a seed layer includes forming the seed layer in UHV environment.
Claim 5
Dependent Claim
29 words
The method of fabricating a semiconductor structure of claim 1 wherein the step of forming a seed layer includes forming the seed layer in a chemical vapor deposition system.
Claim 6
Dependent Claim
26 words
The method of fabricating a semiconductor structure of claim 1 wherein the step of forming a seed layer includes forming in a physical vapor deposition system.
Claim 7
Dependent Claim
31 words
The method of fabricating a semiconductor structure of claim 1 wherein the step of forming a seed layer comprises forming at least a single monolayer of silicon, oxygen, and a metal.
Claim 8
Dependent Claim
25 words
The method of fabricating a semiconductor structure of claim 6 wherein the metal is selected from the group of strontium, barium, calcium, zirconium, and hafnium.
Claim 9
Independent Claim
71 words
A method of fabricating a semiconductor structure comprising the steps of: providing a silicon substrate having a surface; forming amorphous silicon dioxide on the surface of the silicon substrate; providing a metal oxide on the amorphous silicon dioxide; and heating the semiconductor structure to convert substantially all of the amorphous silicon dioxide and metal oxide to form an interface comprising a crystalline seed layer adjacent the surface of the silicon substrate.
Claim 10
Independent Claim
71 words
A method of fabricating a semiconductor structure comprising the steps of: providing a silicon substrate having a surface; forming amorphous silicon dioxide on the surface of the silicon substrate; providing a metal oxide on the amorphous silicon dioxide; and heating the semiconductor structure to convert substantially all of the amorphous silicon dioxide and metal oxide to form an interface comprising a crystalline seed layer adjacent the surface of the silicon substrate.
Claim 11
Dependent Claim
22 words
The method of fabricating a semiconductor structure of claim 8 wherein the heating step includes forming the interface with a 2×1 reconstruction.
Claim 12
Dependent Claim
29 words
The method of fabricating a semiconductor structure of claim 8 wherein the steps of providing a metal oxide and heating the semiconductor structure are accomplished in an ultra-high-vacuum system.
Claim 13
Dependent Claim
31 words
The method of fabricating a semiconductor structure of claim 8 wherein the steps of providing a metal oxide and heating the semiconductor structure are accomplished in a chemical vapor deposition system.
Claim 14
Dependent Claim
30 words
The method of fabricating a semiconductor structure of claim 8 wherein the steps of providing metal oxide and heating the semiconductor structure are accomplished in a physical vapor deposition system.
Claim 15
Dependent Claim
28 words
The method of fabricating a semiconductor structure of claim 8 wherein the heating step includes forming an interface including a seed layer of silicon, oxygen, and a metal.
Claim 16
Dependent Claim
26 words
The method of fabricating a semiconductor structure of claim 13 wherein the metal oxide is selected from the group of barium, strontium, calcium, zirconium, and hafnium.
Claim 17
Dependent Claim
61 words
The method of fabricating a semiconductor structure of claim 8 wherein the heating step to form the seed layer comprises the steps of: forming a silicon oxide layer having a surface; depositing a metal oxide on the surface of the silicon oxide layer; and heating the silicon oxide layer and the metal oxide to form a silicate crystalline material seed layer.
Claim 18
Dependent Claim
31 words
The method of fabricating a semiconductor structure of claim 8 wherein the step of heating the semiconductor structure comprises forming at least a single monolayer of silicon, oxygen, and a metal.
Claim 19
Independent Claim
88 words
A method of fabricating a semiconductor structure comprising the steps of: providing a silicon substrate having a surface; forming amorphous silicon dioxide on the surface of the silicon substrate; providing a metal oxide on the amorphous silicon dioxide; heating the semiconductor structure to convert substantially all of the amorphous silicon dioxide and metal oxide to form an interface comprising a crystalline seed layer adjacent the surface of the silicon substrate; and forming one or more layers of a single crystal high dielectric constant oxide on the seed layer.
Claim 20
Independent Claim
88 words
A method of fabricating a semiconductor structure comprising the steps of: providing a silicon substrate having a surface; forming amorphous silicon dioxide on the surface of the silicon substrate; providing a metal oxide on the amorphous silicon dioxide; heating the semiconductor structure to convert substantially all of the amorphous silicon dioxide and metal oxide to form an interface comprising a crystalline seed layer adjacent the surface of the silicon substrate; and forming one or more layers of a single crystal high dielectric constant oxide on the seed layer.
Claim 21
Dependent Claim
26 words
The method of fabricating a semiconductor structure of claim 17 wherein the step of forming the seed layer includes forming an interface having a 2×1 reconstruction.
Claim 22
Dependent Claim
24 words
The method of fabricating a semiconductor structure of claim 17 wherein the step of providing a metal oxide is accomplished in an ultra-high-vacuum system.
Claim 23
Dependent Claim
26 words
The method of fabricating a semiconductor structure of claim 17 wherein the step of providing a metal oxide is accomplished in a chemical vapor deposition system.
Claim 24
Dependent Claim
26 words
The method of fabricating a semiconductor structure of claim 17 wherein the step of providing a metal oxide is accomplished in a physical vapor deposition system.
Claim 25
Dependent Claim
36 words
The method of fabricating a semiconductor structure of claim 17 wherein the metal oxide on the amorphous silicon dioxide is selected from the group of barium oxide, strontium oxide, calcium oxide, zirconium oxide, and hafnium oxide.
Claim 26
Dependent Claim
31 words
The method of fabricating a semiconductor structure of claim 17 wherein the step of heating the semiconductor structure comprises forming at least a single monolayer of silicon, oxygen, and a metal.
References Cited (Backward Citations)
US5879956A
Cited
JP2000068466A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 7.5 Years (Year 8) | 2008-11-19 | 2009-05-21 | 2009-11-20 | $3760.00 | Window Closed / Lapsed |
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