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US6316331B1
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US
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Method of making dishing-free insulator in trench isolation
Assignee: Vanguard International Semiconductor Corp
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Filing: 2000-10-13
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Granted: 2001-11-13
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Expires: 2020-10-13
Abstract
Abstract The present invention provides a method to form a dishing-free insulator in trench isolation without repeated formations of silicon sidewall spacers and thermal oxidation of the silicon sidewall spacers. Using Ion-Metal Plasma (IMP) process to deposit silicon film directionally in the trenchs of the substrate is the key point of the present invention.
Inventors
- 👤 Horng-Huei Tseng
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:07
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/0143; H10W10/10; H10W10/17
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
94 words
A method of making dishing-free insulator in trench isolation, comprising the steps of: a. providing a semiconductor silicon substrate; b. forming a trench pattern on the silicon substrate, c. forming a first dielectric layer conforming the surface of the substrate having trenchs; d. depositing an oxidation-resistant layer conforming the surface of the first dielectric layer; e. depositing a silicon film directionally by using Ion-Metal Plasma (IMP) process; f. thermally oxidizng the silicon film to form a silicon-oxide layer; g. removing the silicon-oxide layer, the oxidation-resistant layer and the first dielectric layer outside the trench.
Claim 2
Independent Claim
94 words
A method of making dishing-free insulator in trench isolation, comprising the steps of: a. providing a semiconductor silicon substrate; b. forming a trench pattern on the silicon substrate, c. forming a first dielectric layer conforming the surface of the substrate having trenchs; d. depositing an oxidation-resistant layer conforming the surface of the first dielectric layer; e. depositing a silicon film directionally by using Ion-Metal Plasma (IMP) process; f. thermally oxidizng the silicon film to form a silicon-oxide layer; g. removing the silicon-oxide layer, the oxidation-resistant layer and the first dielectric layer outside the trench.
Claim 3
Dependent Claim
17 words
The method according to claim 1 , wherein the first dielectric layer is a silicon dioxide layer.
Claim 4
Dependent Claim
16 words
The method according to claim 1 , wherein the oxidation-resistant layer is a silicon nitride layer.
Claim 5
Dependent Claim
27 words
The method according to claim 1 , wherein the silicon film is a material selected from the group consisting of doped polysilicon, undoped polysilicon and amorphous silicon.
Claim 6
Dependent Claim
16 words
The method according to claim 1 , wherein a CMP process is used in step g.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-11-12 | 2005-05-14 | 2005-11-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-11-12 | 2009-05-14 | 2009-11-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-11-12 | 2013-05-14 | 2013-11-13 | $7700.00 | Window Closed / Lapsed |