US6316167B1 — Tunabale vapor deposited materials as antireflect…

Claim 1

Independent Claim 74 words

A lithographic structure comprising: a plurality of layers at least one of which is an RCHX layer which comprises a material having structural formula R:C:H:X, wherein R is selected from the group consisting of Si, Ge, B, Sn, Fe, Ti and combinations thereof and wherein X is not present or is selected from the group consisting of one or more of O, N, S, and F and a layer of an energy active material.

Claim 2

Dependent Claim 74 words

A lithographic structure comprising: a plurality of layers at least one of which is an RCHX layer which comprises a material having structural formula R:C:H:X, wherein R is selected from the group consisting of Si, Ge, B, Sn, Fe, Ti and combinations thereof and wherein X is not present or is selected from the group consisting of one or more of O, N, S, and F and a layer of an energy active material.

Claim 3

Dependent Claim 15 words

A lithographic structure according to claim 1 , wherein said RCHX layer is vapor deposited.

Claim 4

Dependent Claim 39 words

A lithographic structure according to claim 2 wherein the said RCHX layer is vapor deposited by radiation assisted techniques selected from the group comprising chemical vapor deposition, high density plasma, sputtering, ion beam, electron beam, and laser assisted techniques.

Claim 5

Dependent Claim 40 words

A lithographic structure according to claim 1 , wherein said plurality of layers are deposited on a substrate selected from the group consisting of a semiconductor, an insulator, a non-metallic conductor, a polymer, a glass, a metal and combinations thereof.

Claim 6

Dependent Claim 22 words

A lithographic structure according to claim 4 wherein an etch selectivity of said RCHX layer to said substrate is greater than 1:3.

Claim 7

Dependent Claim 25 words

A lithographic structure according to claim 1 wherein said RCHX layer functions as a hardmask layer, an anti-reflection layer and as a combined hardmask/anti-reflection layer.

Claim 8

Dependent Claim 27 words

A lithographic structure according to claim 1 , wherein there is less than 0.01 reflectance at an interface between said energy active layer and said RCHX layer.

Claim 9

Dependent Claim 39 words

A lithographic structure according to claim 1 , wherein said RCHX layer is a hardmask for transfer of a pattern into a material selected from the groups consisting of Si, Ge, SiGe, an oxide, a nitride, and a metal.

Claim 10

Dependent Claim 23 words

A lithographic structure according to claim 8 wherein said lithographic structure is used for electron beam lithography, ion beam lithography, and x-ray lithography.

Claim 11

Dependent Claim 36 words

A lithographic structure according to claim 1 , wherein said RCHX layer is an anti-reflection coating at a wavelength selected from the group consisting of 248 nm, 193 nm, 157 nm, 126 nm and extreme ultraviolet.

Claim 12

Dependent Claim 33 words

A lithographic structure according to claim 1 , wherein said substrate comprises a material selected from the group consisting of silicon, germanium, silicon germanium, metals, nonmetallic conductors, polymers, oxides, nitrides, and combinations thereof.

Claim 13

Dependent Claim 47 words

A lithographic structure according to claim 1 , wherein said energy active material is selected from compositions which are sensitive at wavelengths selected from the group consisting of 248 nm, 193 nm, 157 nm, 126 nm, and extreme ultraviolet radiation, electron beam, ion beam, and x-ray irradiation.

Claim 14

Dependent Claim 61 words

A lithographic structure according to claim 1 , wherein the index of refraction and the extinction coefficient of said RCHX layer are finely tuned to substantially match those of said energy active material and a substrate at a first interface between said RCHX layer and said substrate and at a second interface between said RCHX layer and said energy active material.

Claim 15

Dependent Claim 39 words

A lithographic structure according to claim 13 , wherein said RCHX layer is substantially uniform in thickness and optically nonuniform through the thickness of said RCHX layer, with a graded index of refraction and with a graded extinction coefficient.

Claim 16

Dependent Claim 34 words

A lithographic structure according to claim 13 , wherein said index of refraction is tunable between from about 1.4 to about 2.6 at 248 nm, 193 nm, 157 nm, 126 nm and extreme ultraviolet.

Claim 17

Dependent Claim 32 words

A lithographic structure according to claim 13 , wherein said extinction coefficient is tunable from about 0.01 to about 0.78 at 248 nm, 193 nm, 157 nm, 126 nm and extreme ultraviolet.

Claim 18

Dependent Claim 34 words

A lithographic structure according to claim 16 , wherein said extinction coefficient is more preferably tuned from about 0.15 to about 0.6 at 248 nm, 193 nm, 157 nm, 126 nm and extreme ultraviolet.

Claim 19

Dependent Claim 55 words

A lithographic structure according to claim 13 , wherein said index of refraction is tuned to about 1.5 at said first interface to substantially match that of said surface of said substrate, and tuned to about 1.8 at said second interface to match that of said energy active material with which it is in contact.

Claim 20

Dependent Claim 54 words

A lithographic structure according to claim 13 , wherein said extinction coefficient is tuned to about 0.5 at said first interface to match that of said major surface of said substrate, and tuned to about 0.1 at said second interface to match that of the energy active material with which it is in contact.

Claim 21

Dependent Claim 47 words

A lithographic structure according to claim 1 , wherein said RCHX layer comprises by atom % R from about 0 to about 95; C from greater than 0 to about 95; H from greater than 0 to about 50; and, X from about 0 to about 70.

Claim 22

Dependent Claim 18 words

A lithographic structure according to claim 1 , wherein said RCHX layer acts as a bottom antireflective coating.

Claim 23

Dependent Claim 18 words

A lithographic structure according to claim 1 , wherein said energy active material is a chemically amplified resist.

Claim 24

Dependent Claim 44 words

A lithographic structure according to claim 1 , wherein said RCHX layer is patternable and removable by reactive ion etching in a plasma containing at least one of the species selected from the group consisting of oxygen, fluorine, chlorine, bromine, hydrogen, and combinations thereof.

Claim 25

Dependent Claim 31 words

A lithographic structure according to claim 1 wherein the optical, chemical, and physical properties of said material having structural formula R:C:H:X are not significantly impacted by exposure to the given irradiation.

Claim 26

Dependent Claim 24 words

A lithographic structure according to claim 1 wherein said layer of energy active material has a thickness ranging from 500 A to 6000 A.

Claim 27

Dependent Claim 24 words

A lithographic structure according to claim 1 wherein an etch selectivity of said energy active material to said RCHX layer is greater than 1:1.

Claim 28

Dependent Claim 24 words

A lithographic structure according to claim 1 , further including a nitride layer and an oxide layer between a surface and said RCHX layer.

Claim 29

Dependent Claim 17 words

A lithographic structure according to claim 1 , further including a pattern in said plurality of layers.

Claim 30

Dependent Claim 25 words

A lithographic structure according to claim 1 wherein there is substantially no interfacial mixing of said RCHX layer and said layer of energy active material.

Claim 31

Dependent Claim 102 words

A lithographic structure comprising: a substrate having a surface, an oxide layer on said surface, a nitride layer on said oxide, an oxide layer on said nitride, an RCHX layer on said oxide, an energy sensitive layer on said RCHX layer, said an RCHX layer which comprises a material having structural formula R:C:H:X, wherein R is selected from the group consisting of Si, Ge, B, Sn, Fe, Ti and combinations thereof and wherein X is not present or is selected from the group consisting of one or more of O, N, S, and F and a layer of an energy active material.

Claim 32

Dependent Claim 102 words

A lithographic structure comprising: a substrate having a surface, an oxide layer on said surface, a nitride layer on said oxide, an oxide layer on said nitride, an RCHX layer on said oxide, an energy sensitive layer on said RCHX layer, said an RCHX layer which comprises a material having structural formula R:C:H:X, wherein R is selected from the group consisting of Si, Ge, B, Sn, Fe, Ti and combinations thereof and wherein X is not present or is selected from the group consisting of one or more of O, N, S, and F and a layer of an energy active material.

Claim 33

Dependent Claim 33 words

A lithographic structure according to claim 30 , wherein said substrate is selected from the group consisting of a semiconductor, a metal, a nonmetallic conductor, a ceramic, a glass and a polymer substrate.

Claim 34

Dependent Claim 18 words

A lithographic structure according to claim 30 , wherein there is a pattern formed in said lithographic structure.

Claim 35

Dependent Claim 96 words

A lithographic structure comprising: a substrate having a surface, an oxide layer on said surface, a nitride layer on said oxide, an RCHX layer on said nitride, an energy sensitive layer on said RCHX layer, said an RCHX layer which comprises a material having structural formula R:C:H:X, wherein R is selected from the group consisting of Si, Ge, B, Sn, Fe, Ti and combinations thereof and wherein X is not present or is selected from the group consisting of one or more of O, N, S, and F and a layer of an energy active material.

Claim 36

Dependent Claim 96 words

A lithographic structure comprising: a substrate having a surface, an oxide layer on said surface, a nitride layer on said oxide, an RCHX layer on said nitride, an energy sensitive layer on said RCHX layer, said an RCHX layer which comprises a material having structural formula R:C:H:X, wherein R is selected from the group consisting of Si, Ge, B, Sn, Fe, Ti and combinations thereof and wherein X is not present or is selected from the group consisting of one or more of O, N, S, and F and a layer of an energy active material.

Claim 37

Dependent Claim 33 words

A lithographic structure according to claim 33 , wherein said substrate is selected from the group consisting of a semiconductor, a metal, a nonmetallic conductor, a ceramic, a glass and a polymer substrate.

Claim 38

Dependent Claim 18 words

A lithographic structure according to claim 33 , wherein there is a pattern formed in said lithographic structure.

Claim 39

Dependent Claim 90 words

A lithographic structure comprising: a substrate having a surface, an oxide layer on said surface, an RCHX layer on said oxide, an energy sensitive layer on said RCHX layer, said an RCHX layer which comprises a material having structural formula R:C:H:X, wherein R is selected from the group consisting of Si, Ge, B, Sn, Fe, Ti and combinations thereof and wherein X is not present or is selected from the group consisting of one or more of O, N, S, and F and a layer of an energy active material.

Claim 40

Dependent Claim 90 words

A lithographic structure comprising: a substrate having a surface, an oxide layer on said surface, an RCHX layer on said oxide, an energy sensitive layer on said RCHX layer, said an RCHX layer which comprises a material having structural formula R:C:H:X, wherein R is selected from the group consisting of Si, Ge, B, Sn, Fe, Ti and combinations thereof and wherein X is not present or is selected from the group consisting of one or more of O, N, S, and F and a layer of an energy active material.

Claim 41

Dependent Claim 33 words

A lithographic structure according to claim 36 , wherein said substrate is selected from the group consisting of a semiconductor, a metal, a nonmetallic conductor, a ceramic, a glass and a polymer substrate.

Claim 42

Dependent Claim 18 words

A lithographic structure according to claim 36 , wherein there is a pattern formed in said lithographic structure.

Claim 43

Dependent Claim 84 words

A lithographic structure comprising: a substrate having a surface, an RCHX layer on said surface, an energy sensitive layer on said RCHX layer, said an RCHX layer which comprises a material having structural formula R:C:H:X, wherein R is selected from the group consisting of Si, Ge, B, Sn, Fe, Ti and combinations thereof and wherein X is not present or is selected from the group consisting of one or more of O, N, S, and F and a layer of an energy active material.

Claim 44

Dependent Claim 84 words

A lithographic structure comprising: a substrate having a surface, an RCHX layer on said surface, an energy sensitive layer on said RCHX layer, said an RCHX layer which comprises a material having structural formula R:C:H:X, wherein R is selected from the group consisting of Si, Ge, B, Sn, Fe, Ti and combinations thereof and wherein X is not present or is selected from the group consisting of one or more of O, N, S, and F and a layer of an energy active material.

Claim 45

Dependent Claim 33 words

A lithographic structure according to claim 39 , wherein said substrate is selected from the group consisting of a semiconductor, a metal, a nonmetallic conductor, a ceramic, a glass and a polymer substrate.

Claim 46

Dependent Claim 18 words

A lithographic structure according to claim 39 , wherein there is a pattern formed in said lithographic structure.

Claim 47

Independent Claim 83 words

A method of making a lithographic structure comprising: depositing on a surface of a substrate a plurality of layers at least one of which is an RCHX layer which comprises structural formula R:C:H:X wherein R is selected from the group consisting of Si, Ge, B, Sn, Fe, Ti and combinations thereof and wherein X is not present or is selected form the group consisting of O, N, S and F, a top layer of said plurality of layers is an energy active material.

Claim 48

Independent Claim 83 words

A method of making a lithographic structure comprising: depositing on a surface of a substrate a plurality of layers at least one of which is an RCHX layer which comprises structural formula R:C:H:X wherein R is selected from the group consisting of Si, Ge, B, Sn, Fe, Ti and combinations thereof and wherein X is not present or is selected form the group consisting of O, N, S and F, a top layer of said plurality of layers is an energy active material.

Claim 49

Dependent Claim 18 words

A method of making a lithographic structure according to claim 42 wherein the RCHX layer is vapor deposited.

Claim 50

Dependent Claim 41 words

A method of making a lithographic structure according to claim 42 wherein the RCHX layer is deposited by radiation assisted techniques selected from the group comprising chemical vapor deposition, high density plasma, sputtering, ion beam, electron beam, and laser assisted techniques.

Claim 51

Dependent Claim 24 words

A method of making a lithographic structure according to claim 42 wherein said RCHX layer does not substantially intermix with said energy active layer.

Claim 52

Dependent Claim 28 words

A method of making a lithographic structure according to claim 42 wherein said RCHX layer functions as an antireflective coating, a hardmask, and as a combined antireflective coating/hardmask.

Claim 53

Dependent Claim 30 words

A method of making a lithographic structure according to claim 42 , wherein said hardmask/antireflective coating is a bottom layer which is overcoated with a layer of energy active material.

Claim 54

Dependent Claim 48 words

A method of making a lithographic structure according to claim 42 , wherein said energy sensitive material is selected from a group consisting of compositions which are active at 248 nm, 193 nm, 157 nm, 126 nm, and extreme ultraviolet radiation, electron beam, x-ray, and ion beam irradiation.

Claim 55

Dependent Claim 50 words

A method of making a lithographic structure according to claim 42 , wherein said RCHX layer has an index of refraction from about 1.4 to about 2.6 and an extinction coefficient from about 0.01 to about 0.78 at 248 nm, 193 nm, 157 nm, 126 nm, and extreme ultraviolet radiation.

Claim 56

Dependent Claim 67 words

A method of making a lithographic structure according to claim 42 , wherein an index of refraction and an extinction coefficient of said RCHX layer are finely tuned to substantially match those of said RCHX layer energy active material and said substrate at a first interface between said RCHX layer and said substrate and at a second interface between said RCHX layer and said energy active material.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	2004-11-12	2005-05-14	2005-11-13	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2008-11-12	2009-05-14	2009-11-13	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2012-11-12	2013-05-14	2013-11-13	$7700.00	Window Closed / Lapsed

Tunabale vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and application thereof

Abstract

Inventors

Bibliographic Details

Claims Analysis

References Cited (Backward Citations)

USPTO Annuity & Maintenance Windows

Assigned Categories & Tags

Assign Category Tag