Patent US6310403B1 successfully refreshed from Google Patents.
US6310403B1
Expired / Lapsed
US
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Method of manufacturing components and component thereof
Assignee: NXP USA Inc
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Filing: 2000-08-31
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Granted: 2001-10-30
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Expires: 2020-08-31
Abstract
Abstract A method of manufacturing components includes providing a substrate (110, 531, 631, 700) having a first coefficient of thermal expansion (CTE), having a first surface (111), and supporting a first plurality of interconnects located over the first surface in a first predetermined pattern. The method also includes providing another substrate (190) having a second CTE, having a second surface (195), and supporting a second plurality of interconnects located over the second surface in a second predetermined pattern. The method further includes assembling together the two substrates at a first temperature outside of a temperature range of approximately 25 to 30° C.
Inventors
- 👤 Chunsheng Zhang
- 👤 Jong-Kai Lin
- 👤 Scott E. Lindsey
- 👤 Yifan Guo
- 👤 Li Li
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 12:20
CPC Classifications
H; H05; H05K; H05K3/00; H05K3/30; H05K3/32; H05K3/34; H05K3/341; H05K3/3431; H05K3/3436; H05K2201/00; H05K2201/06; H05K2201/068; H05K2201/09; H05K2201/09209; H05K2201/09372; H05K2201/09427; H05K2201/10; H05K2201/10613; H05K2201/10621; H05K2201/10674; H05K2201/10954; H05K2201/10977; H05K2203/00; H05K2203/04; H05K2203/048; H10; H10W; H10W72/00; H10W72/071; H10W72/072; H10W72/07231; H10W72/07236; H10W72/07251; H10W72/07254; H10W72/20; H10W72/241; H10W72/242; H10W72/244; H10W72/251; H10W72/252; H10W72/90; H10W72/921; H10W72/923; H10W72/941; H10W72/9415; Y; Y02; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 44
Claim 1
Independent Claim
123 words
A method of manufacturing components comprising: providing a first substrate having a first coefficient of thermal expansion (CTE), having a first surface, and supporting a first plurality of interconnects located over the first surface in a first predetermined pattern; providing a second substrate having a second CTE, having a second surface, and supporting a second plurality of interconnects located over the second surface in a second predetermined pattern; and assembling together the first and second substrates at a first temperature outside of a temperature range of approximately 25 to 30° C., wherein: the first and second pluralities of interconnects are aligned with each other at the first temperature and are substantially misaligned with each other at a second temperature of the temperature range.
Claim 2
Independent Claim
123 words
A method of manufacturing components comprising: providing a first substrate having a first coefficient of thermal expansion (CTE), having a first surface, and supporting a first plurality of interconnects located over the first surface in a first predetermined pattern; providing a second substrate having a second CTE, having a second surface, and supporting a second plurality of interconnects located over the second surface in a second predetermined pattern; and assembling together the first and second substrates at a first temperature outside of a temperature range of approximately 25 to 30° C., wherein: the first and second pluralities of interconnects are aligned with each other at the first temperature and are substantially misaligned with each other at a second temperature of the temperature range.
Claim 3
Dependent Claim
47 words
The method of claim 1 wherein: providing the first substrate further comprises: providing the first predetermined pattern located only at a periphery of the first surface; and providing the second substrate further comprises: providing the second predetermined pattern located only at a periphery of the second surface.
Claim 4
Dependent Claim
39 words
The method of claim 1 wherein: providing the first substrate further comprises: providing a first grid pattern for the first predetermined pattern; and providing the second substrate further comprises: providing a second grid pattern for the second predetermined pattern.
Claim 5
Dependent Claim
28 words
The method of claim 1 further comprising: dispensing an underfill material between the first and second substrates; and curing the underfill material between the first and second substrates.
Claim 6
Dependent Claim
38 words
The method of claim 1 wherein: assembling together the first and second substrates further comprises: heating the first substrate; electrically coupling together the first and second pluralities of interconnects; and cooling the first substrate to the first temperature.
Claim 7
Dependent Claim
28 words
The method of claim 5 wherein: assembling together the first and second substrates further comprises: heating the second substrate; and cooling the second substrate to the first temperature.
Claim 8
Dependent Claim
29 words
The method of claim 5 wherein: assembling together the first and second substrates further comprises: aligning together the first substrate and the second substrate before heating the first substrate.
Claim 9
Dependent Claim
28 words
The method of claim 5 wherein: electrically coupling together the first and second pluralities of interconnects occurs after heating the first substrate and before cooling the first substrate.
Claim 10
Dependent Claim
32 words
The method of claim 1 wherein: providing the first substrate further comprises: providing a first additional plurality of interconnects located over the first surface and adjacent to the first plurality of interconnects.
Claim 11
Dependent Claim
32 words
The method of claim 9 wherein: providing the second substrate further comprises: providing a second additional plurality of interconnects located over the second surface and adjacent to the second plurality of interconnects.
Claim 12
Dependent Claim
51 words
The method of claim 10 wherein: assembling together the first and second substrates further comprises: misaligning the first additional plurality of interconnects and the second additional plurality of interconnects at the first temperature; and the first and second additional pluralities of interconnects are aligned with each other at the second temperature.
Claim 13
Dependent Claim
73 words
The method of claim 1 wherein: providing the first substrate further comprises: providing the first substrate with a first plurality of dice, each die in the first plurality of dice having a portion of the first plurality of interconnects; and providing the second substrate further comprises: providing the second substrate with a second plurality of dice, each die in the second plurality of dice having a portion of the second plurality of interconnects.
Claim 14
Dependent Claim
34 words
The method of claim 12 further comprising: singulating the dice of the first plurality of dice from the first substrate; and singulating the dice of the second plurality of dice from the second substrate.
Claim 15
Dependent Claim
51 words
The method of claim 13 wherein: singulating the dice of the first plurality of dice from the first substrate occurs after assembling together the first and second substrates; and singulating the dice from the second plurality of dice from the second substrate occurs after assembling together the first and second substrates.
Claim 16
Dependent Claim
31 words
The method of claim 12 wherein: providing the first substrate further comprises: providing a location for each of the portions of the first plurality of interconnects to be compensated by portion.
Claim 17
Dependent Claim
31 words
The method of claim 12 wherein: providing the second substrate further comprises: providing a location for each of the portions of the second plurality of interconnects to be compensated by portion.
Claim 18
Dependent Claim
37 words
The method of claim 12 wherein: providing the first substrate further comprises: providing a location for each of the portions of the first plurality of interconnects to be compensated by portion and compensated individually within the portion.
Claim 19
Dependent Claim
37 words
The method of claim 12 wherein: providing the second substrate further comprises: providing a location for each of the portions of the second plurality of interconnects to be compensated by portion and compensated individually within the portion.
Claim 20
Dependent Claim
28 words
The method of claim 1 wherein: providing the first substrate further comprises: providing a location for each interconnect of the first plurality of interconnects to be compensated individually.
Claim 21
Dependent Claim
28 words
The method of claim 1 wherein: providing the second substrate further comprises: providing a location for each interconnect of the second plurality of interconnects to be compensated individually.
Claim 22
Dependent Claim
29 words
The method of claim 1 wherein: providing the first substrate further comprises: providing a location for different groups of the first plurality of interconnects to be compensated by group.
Claim 23
Dependent Claim
29 words
The method of claim 1 wherein: providing the second substrate further comprises: providing a location for different groups of the second plurality of interconnects to be compensated by group.
Claim 24
Independent Claim
172 words
A method of manufacturing semiconductor components comprising: manufacturing a plurality of semiconductor devices and a first plurality of interconnects supported by a semiconductor wafer having a first coefficient of thermal expansion (CTE), the first plurality of interconnects having a first predetermined pattern located over a first surface of the semiconductor wafer; disposing a plurality of interconnect bumps adjacent to the first plurality of interconnects; providing a capping substrate having a second CTE, a second surface, and a second plurality of interconnects located over the second surface in a second predetermined pattern; assembling together the semiconductor wafer and the capping substrate at a first temperature greater than approximately 30° C.; dispensing an underfill material between the semiconductor wafer and the capping substrate after assembling together the semiconductor wafer and the capping substrate; and curing the underfill material, wherein: the first and second pluralities of interconnects are aligned with each other at the first temperature and are substantially misaligned with each other at a second temperature less than or equal to approximately 30° C.
Claim 25
Independent Claim
172 words
A method of manufacturing semiconductor components comprising: manufacturing a plurality of semiconductor devices and a first plurality of interconnects supported by a semiconductor wafer having a first coefficient of thermal expansion (CTE), the first plurality of interconnects having a first predetermined pattern located over a first surface of the semiconductor wafer; disposing a plurality of interconnect bumps adjacent to the first plurality of interconnects; providing a capping substrate having a second CTE, a second surface, and a second plurality of interconnects located over the second surface in a second predetermined pattern; assembling together the semiconductor wafer and the capping substrate at a first temperature greater than approximately 30° C.; dispensing an underfill material between the semiconductor wafer and the capping substrate after assembling together the semiconductor wafer and the capping substrate; and curing the underfill material, wherein: the first and second pluralities of interconnects are aligned with each other at the first temperature and are substantially misaligned with each other at a second temperature less than or equal to approximately 30° C.
Claim 26
Dependent Claim
98 words
The method of claim 23 wherein: manufacturing the plurality of semiconductor devices and the first plurality of interconnects further comprises: providing the first predetermined pattern from a first group of patterns consisting of a first peripheral pattern located only at a periphery of the first surface and a first grid pattern located across the first surface; providing the capping substrate further comprises: providing the second predetermined pattern from a second group of patterns consisting of a second peripheral pattern located only at a periphery of the second surface and a second grid pattern located across the second surface.
Claim 27
Dependent Claim
113 words
The method of claim 23 wherein: disposing the plurality of interconnect bumps occurs before assembling together the semiconductor wafer and the capping substrate; and assembling together the semiconductor wafer and the capping substrate further comprises: aligning together the semiconductor wafer and the capping substrate; heating the plurality of interconnect bumps above the first temperature; electrically coupling together the plurality of interconnect bumps and the second plurality of interconnects after heating the semiconductor wafer and the capping substrate; cooling the plurality of interconnect bumps to the first temperature after electrically coupling together the plurality of interconnect bumps and the second plurality of interconnects; and solidifying the plurality of interconnect bumps at the first temperature.
Claim 28
Dependent Claim
128 words
The method of claim 23 wherein: manufacturing the plurality of semiconductor devices and the first plurality of interconnects supported by the semiconductor wafer further comprises: manufacturing a first additional plurality of interconnects supported by the semiconductor wafer, located over the first surface, and located adjacent to the first plurality of interconnects; providing the capping substrate further comprises: providing a second additional plurality of interconnects located over the second surface and adjacent to the second plurality of interconnects; and assembling together the semiconductor wafer and the capping substrate further comprises: substantially misaligning the first additional plurality of interconnects and the second additional plurality of interconnects at the first temperature; and aligning together the first additional plurality of interconnects and the second additional plurality of interconnects at the second temperature.
Claim 29
Dependent Claim
137 words
The method of claim 23 wherein: manufacturing the plurality of semiconductor devices and the first plurality of interconnects supported by the semiconductor wafer further comprises: manufacturing a first plurality of dice in the semiconductor wafer, each die in the first plurality of dice having at least one of the plurality of semiconductor devices and a portion of the first plurality of interconnects; providing the capping substrate further comprises: providing the capping substrate with a second plurality of dice, each die in the second plurality of dice having a portion of the second plurality of interconnects; and the method further comprises: simultaneously singulating the dice of the first plurality of dice from the semiconductor wafer and the dice from the second plurality of dice from the capping substrate after assembling together the semiconductor wafer and the capping substrate.
Claim 30
Dependent Claim
110 words
A component comprising: a first substrate having a first coefficient of thermal expansion (CTE), a first surface, and a first plurality of interconnects located over the first surface in a first predetermined pattern; a second substrate having a second CTE, a second surface, and a second plurality of interconnects located over the second surface in a second predetermined pattern,; and wherein: the first and second pluralities of interconnects are aligned with each other at a first temperature outside of a temperature range of approximately 25 to 30° C.; and the first and second pluralities of interconnects are substantially misaligned with each other at a second temperature in the temperature range.
Claim 31
Dependent Claim
110 words
A component comprising: a first substrate having a first coefficient of thermal expansion (CTE), a first surface, and a first plurality of interconnects located over the first surface in a first predetermined pattern; a second substrate having a second CTE, a second surface, and a second plurality of interconnects located over the second surface in a second predetermined pattern,; and wherein: the first and second pluralities of interconnects are aligned with each other at a first temperature outside of a temperature range of approximately 25 to 30° C.; and the first and second pluralities of interconnects are substantially misaligned with each other at a second temperature in the temperature range.
Claim 32
Dependent Claim
35 words
The component of claim 28 wherein: the first predetermined pattern is located only at a periphery of the first surface; and the second predetermined pattern is located only at a periphery of the second surface.
Claim 33
Dependent Claim
35 words
The component of claim 28 wherein: the first predetermined pattern comprises a first grid pattern located across the first surface; and the second predetermined pattern comprises a second grid pattern located across the second surface.
Claim 34
Dependent Claim
16 words
The component of claim 28 further comprising: an underfill material between the first and second substrates.
Claim 35
Dependent Claim
88 words
The component of claim 28 further comprising: a first additional plurality of interconnects located over the first surface and adjacent to the first plurality of interconnects; and a second additional plurality of interconnects located over the second surface and adjacent to the second plurality of interconnects, wherein: the first additional plurality of interconnects and the second additional plurality of interconnects are substantially misaligned at the first temperature; and the first additional plurality of interconnects and the second additional plurality of interconnects are aligned together at the second temperature.
Claim 36
Dependent Claim
61 words
The component of claim 28 wherein: the first substrate further comprises: a first plurality of dice, each die in the first plurality of dice having a portion of the first plurality of interconnects; and the second substrate further comprises: a second plurality of dice, each die in the second plurality of dice having a portion of the second plurality of interconnects.
Claim 37
Dependent Claim
23 words
The component of claim 33 wherein: a location for each of the portions of the first plurality of interconnects is compensated by portion.
Claim 38
Dependent Claim
23 words
The component of claim 33 wherein: a location for each of the portions of the second plurality of interconnects is compensated by portion.
Claim 39
Dependent Claim
29 words
The component of claim 33 wherein: a location for each of the portions of the first plurality of interconnects is compensated by portion and compensated individually within the portion.
Claim 40
Dependent Claim
29 words
The component of claim 33 wherein: a location for each of the portions of the second plurality of interconnects is compensated by portion and compensated individually within the portion.
Claim 41
Dependent Claim
20 words
The component of claim 28 wherein: a location for each interconnect of the first plurality of interconnects is compensated individually.
Claim 42
Dependent Claim
20 words
The component of claim 28 wherein: a location for each interconnect of the second plurality of interconnects is compensated individually.
Claim 43
Dependent Claim
21 words
The component of claim 28 wherein: a location for different groups of the first plurality of interconnects is compensated by group.
Claim 44
Dependent Claim
21 words
The component of claim 28 wherein: a location for each portion of the second plurality of interconnects is compensated by group.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-10-29 | 2005-04-30 | 2005-10-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-10-29 | 2009-04-30 | 2009-10-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-10-29 | 2013-04-30 | 2013-10-30 | $7700.00 | Window Closed / Lapsed |