Patent US6300205B1 successfully refreshed from Google Patents.
US6300205B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making a semiconductor device with self-aligned active, lightly-doped drain, and halo regions
Assignee: GlobalFoundries Inc
•
Filing: 1998-11-18
•
Granted: 2001-10-09
•
Expires: 2018-11-18
Abstract
Abstract One method of making a semiconductor device includes forming a gate electrode on a substrate and forming a spacer on a sidewall of the gate electrode. An active region is then formed in the substrate and adjacent to the spacer, but spaced apart from the gate electrode, using a first dopant material. A halo region is formed in the substrate under the spacer and adjacent to the active region using a second dopant material of a conductivity type different than the first dopant material. The halo region may be formed by implanting the second dopant region into the substrate at an angle substantially less than 90° relative to a surface of the substrate. A portion of the spacer is then removed and a lightly-doped region is formed in the substrate adjacent to the active region and the gate electrode and shallower than the halo region using a third dopant material of a same conductivity type as the first dopant material.
Inventors
- 👤 H. Jim Fulford
- 👤 Jon Cheek
- 👤 Derick J. Wristers
- 👤 James Buller
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 18:47
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/015; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10D62/00; H10D62/10; H10D62/17; H10D62/351; H10D62/357; H10D62/364; H10D62/371; H10D64/021; H10P; H10P30/00; H10P30/20; H10P30/22; H10P30/221; H10P30/222; H10D30/60; H10D30/601
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
125 words
A method of making a semiconductor device, comprising: forming a gate electrode on a substrate; forming a spacer on a sidewall of the gate electrode; forming an active region, using a first dopant material, in the substrate adjacent to the spacer and spaced apart from the gate electrode; forming a halo region, using a second dopant material of a conductivity type different than the first dopant material, in the substrate under the spacer and adjacent to the active region; removing at least a portion of the spacer; and forming a lightly-doped region, using a third dopant material of a same conductivity type as the first dopant material, in the substrate adjacent to the active region and the gate electrode and shallower than the halo region.
Claim 2
Independent Claim
125 words
A method of making a semiconductor device, comprising: forming a gate electrode on a substrate; forming a spacer on a sidewall of the gate electrode; forming an active region, using a first dopant material, in the substrate adjacent to the spacer and spaced apart from the gate electrode; forming a halo region, using a second dopant material of a conductivity type different than the first dopant material, in the substrate under the spacer and adjacent to the active region; removing at least a portion of the spacer; and forming a lightly-doped region, using a third dopant material of a same conductivity type as the first dopant material, in the substrate adjacent to the active region and the gate electrode and shallower than the halo region.
Claim 3
Dependent Claim
33 words
The method of claim 1 , wherein forming a spacer comprises: forming a first spacer adjacent to the sidewall of the gate electrode; and forming a second spacer adjacent to the first spacer.
Claim 4
Dependent Claim
14 words
The method of claim 2 , wherein the first spacer comprises an oxide material.
Claim 5
Dependent Claim
14 words
The method of claim 2 , wherein the second spacer comprises a nitride material.
Claim 6
Dependent Claim
21 words
The method of claim 2 , wherein removing at least a portion of the spacer comprises selectively removing the second spacer.
Claim 7
Dependent Claim
24 words
The method of claim 5 , wherein removing at least a portion of the spacer further comprises removing a portion of the first spacer.
Claim 8
Dependent Claim
21 words
The method of claim 2 , wherein removing at least a portion of the spacer comprises removing all of the spacer.
Claim 9
Dependent Claim
21 words
The method of claim 1 , wherein removing at least a portion of the spacer comprises removing all of the spacer.
Claim 10
Dependent Claim
35 words
The method of claim 1 , wherein forming a halo region comprises implanting the second dopant material into the substrate and adjacent to a lower portion of the active region to form the halo region.
Claim 11
Dependent Claim
36 words
The method of claim 1 , wherein forming a halo region comprises implanting the second dopant material at an angle substantially less than 90° relative to a surface of the substrate to form the halo region.
Claim 12
Dependent Claim
17 words
The method of claim 10 , further comprising rotating the substrate while implanting the second dopant material.
Claim 13
Dependent Claim
35 words
The method of claim 1 , wherein forming a halo region comprises implanting the second dopant material at an angle in a range of 15 to 40 degrees relative to a surface of the substrate.
Claim 14
Dependent Claim
52 words
The method of claim 1 , wherein forming the halo region further comprises forming an upturned portion of the halo region spaced apart from the active region by implanting the second dopant material under the spacer and at an angle substantially less than 90 degrees relative to a surface of the substrate.
Claim 15
Dependent Claim
28 words
The method of claim 1 , wherein the first and third dopant materials comprise a p-type dopant material and the second dopant material comprises an n-type dopant material.
Claim 16
Dependent Claim
28 words
The method of claim 1 , wherein the first and third dopant materials comprise an n-type dopant material and the second dopant material comprises a p-type dopant material.
Claim 17
Dependent Claim
17 words
The method of claim 1 , wherein the halo region is formed subsequent to the active region.
Claim 18
Dependent Claim
25 words
The method of claim 1 , wherein forming a halo region includes forming the halo region before removing at least a portion of the spacer.
Claim 19
Dependent Claim
45 words
The method of claim 17 , wherein forming a halo region includes implanting dopant through the spacer to form a portion of the halo region that extends vertically closer to the gate region than a portion of the halo region immediately adjacent the active region.
Claim 20
Dependent Claim
25 words
The method of claim 17 , wherein forming a lightly-doped region includes forming a lightly-doped region after removing at least a portion of the spacer.
Claim 21
Independent Claim
159 words
A method of making a semiconductor device, comprising: forming a gate electrode on a substrate; forming a first spacer adjacent to a sidewall of the gate electrode; forming a second spacer adjacent to the first spacer; implanting a first dopant material in the substrate to form an active region adjacent to the second spacer and spaced apart from the gate electrode; implanting a second dopant material in the substrate at an angle substantially less than 90° relative to a surface of the substrate to form a halo region under the first and second spacers and adjacent to a lower portion of the active region, wherein the second dopant material is of a conductivity type different than the first dopant material; selectively removing the second spacer; and implanting a third dopant material in the substrate after selectively removing the second spacer to form a lightly-doped region adjacent to the active region and the gate electrode and above the halo region.
Claim 22
Independent Claim
159 words
A method of making a semiconductor device, comprising: forming a gate electrode on a substrate; forming a first spacer adjacent to a sidewall of the gate electrode; forming a second spacer adjacent to the first spacer; implanting a first dopant material in the substrate to form an active region adjacent to the second spacer and spaced apart from the gate electrode; implanting a second dopant material in the substrate at an angle substantially less than 90° relative to a surface of the substrate to form a halo region under the first and second spacers and adjacent to a lower portion of the active region, wherein the second dopant material is of a conductivity type different than the first dopant material; selectively removing the second spacer; and implanting a third dopant material in the substrate after selectively removing the second spacer to form a lightly-doped region adjacent to the active region and the gate electrode and above the halo region.
Claim 23
Dependent Claim
24 words
The method of claim 20 , further comprising removing at least a portion of the first spacer prior to implanting the third dopant material.
Claim 24
Dependent Claim
19 words
The method of claim 20 , wherein the first dopant material is implanted prior to the second dopant material.
Claim 25
Dependent Claim
31 words
The method of claim 20 , wherein implanting a second dopant material to form a halo region includes implanting dopant material through at least one of: the first and second spacers.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-10-08 | 2005-04-09 | 2005-10-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-10-08 | 2009-04-09 | 2009-10-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-10-08 | 2013-04-09 | 2013-10-09 | $7700.00 | Window Closed / Lapsed |