Patent US6738491B1 successfully refreshed from Google Patents.
Patent US6678404B1 successfully refreshed from Google Patents.
Patent US6292394B1 successfully refreshed from Google Patents.
US6292394B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for programming of a semiconductor memory cell
Assignee: Spansion Israel Ltd
•
Filing: 2000-06-29
•
Granted: 2001-09-18
•
Expires: 2020-06-29
Abstract
Abstract A method for programming an array having a multiplicity of memory cells. The method includes, per cell to be programmed, verifying a programmed or non-programmed state of the cell and flagging those of the cells that verify as non-programmed during one of the verify steps after having previously verified as programmed. A programming pulse having a programming level is applied to the non-programmed cells which are not flagged cells. The steps of verifying, flagging and applying are then repeated until all of the cells verify as programmed at least once. Subsequently, a boost pulse having a boost programming level lower than the programming level is applied to the flagged cells.
Inventors
- 👤 Zeev Cohen
- 👤 Boaz Eitan
- 👤 Eduardo Maayan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 18:19
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C16/06; G11C16/34; G11C16/3436; G11C16/344; G11C16/3445; G11C16/3454; G11C16/3459
Claims Analysis
Total Claims: 35
Claim 1
Independent Claim
108 words
A method for programming an array having a multiplicity of memory cells, the method comprising the steps of: per cell to be programmed, verifying a programmed or non-programmed state of said cell; flagging those of said cells that verify as non-programmed during one of said verify steps after having previously verified as programmed; applying a programming pulse having a programming level to said non-programmed cells which are not flagged cells; repeating said steps of verifying, flagging and applying until all of said cells verify as programmed at least once; and applying a boost pulse having a boost programming level lower than said programming level to said flagged cells.
Claim 2
Independent Claim
108 words
A method for programming an array having a multiplicity of memory cells, the method comprising the steps of: per cell to be programmed, verifying a programmed or non-programmed state of said cell; flagging those of said cells that verify as non-programmed during one of said verify steps after having previously verified as programmed; applying a programming pulse having a programming level to said non-programmed cells which are not flagged cells; repeating said steps of verifying, flagging and applying until all of said cells verify as programmed at least once; and applying a boost pulse having a boost programming level lower than said programming level to said flagged cells.
Claim 3
Dependent Claim
24 words
A method according to claim 1 , wherein said step of repeating comprises the step of increasing said programming level of said programming pulse.
Claim 4
Dependent Claim
26 words
A method according to claim 2 , wherein said step of increasing comprises the step of increasing said programming level by between 0.05 to 0.3 volts.
Claim 5
Dependent Claim
23 words
A method according to claim 2 , wherein said step of increasing comprises the step of determining said programming level by external means.
Claim 6
Dependent Claim
24 words
A method according to claim 2 , wherein said step of increasing comprises the step of increasing said programming level by constant voltage steps.
Claim 7
Dependent Claim
24 words
A method according to claim 2 , wherein said step of increasing comprises the step of increasing said programming level by variable voltage steps.
Claim 8
Dependent Claim
16 words
A method according to claim 1 , wherein said programming pulses vary in length of time.
Claim 9
Dependent Claim
39 words
A method according to claim 1 , and wherein said first step of applying comprises the step of applying a programming pulse to a gate, a drain, or a source of said non-programmed cells which are not flagged cells.
Claim 10
Dependent Claim
23 words
A method according to claim 1 , wherein said step of verifying comprises the step of determining a verifying level by external means.
Claim 11
Dependent Claim
25 words
A method according to claim 1 , wherein said step of verifying comprises the step of determining a verifying level having a constant voltage level.
Claim 12
Dependent Claim
25 words
A method according to claim 1 , wherein said step of verifying comprises the step of determining a verifying level having a variable voltage level.
Claim 13
Dependent Claim
29 words
A method according to claim 1 , wherein said step of verifying comprises the step of verifying whether a threshold voltage of a call is below a determined level.
Claim 14
Independent Claim
110 words
A method for erasing an array having a multiplicity of memory cells, the method comprising the steps of: per cell to be erased, verifying an erased or non-erased state of said cell; flagging those of said cells that verify as non-erased during one of said verify steps after having previously verified as erased; applying an erasing pulse having an erasure level to said non-erased cells which are not flagged cells; repeating said steps of verifying, flagging and applying until all of said cells have verified as said erased at least once; and applying a boost pulse having a boost erase level lower than said erased level to said flagged cells.
Claim 15
Independent Claim
110 words
A method for erasing an array having a multiplicity of memory cells, the method comprising the steps of: per cell to be erased, verifying an erased or non-erased state of said cell; flagging those of said cells that verify as non-erased during one of said verify steps after having previously verified as erased; applying an erasing pulse having an erasure level to said non-erased cells which are not flagged cells; repeating said steps of verifying, flagging and applying until all of said cells have verified as said erased at least once; and applying a boost pulse having a boost erase level lower than said erased level to said flagged cells.
Claim 16
Dependent Claim
24 words
A method according to claim 13 , wherein said step of repeating comprises the step of increasing said erasure level of said erasing pulse.
Claim 17
Dependent Claim
26 words
A method according to claim 14 , wherein said step of increasing comprises the step of increasing said erasure level by between 0.05 to 0.3 volts.
Claim 18
Dependent Claim
23 words
A method according to claim 14 , wherein said step of increasing comprises the step of determining said erasure level by external means.
Claim 19
Dependent Claim
24 words
A method according to claim 14 , wherein said step of increasing comprises the step of increasing said erasure level by constant voltage steps.
Claim 20
Dependent Claim
24 words
A method according to claim 14 , wherein said step of increasing comprises the step of increasing said erasure level by variable voltage steps.
Claim 21
Dependent Claim
16 words
A method according to claim 13 , wherein said erasure pulses vary in length of time.
Claim 22
Dependent Claim
38 words
A method according to claim 13 , wherein said first step of applying comprises the step of applying a programming pulse to a gate, a drain, or a source of said non-programmed cells which are not flagged cells.
Claim 23
Dependent Claim
23 words
A method according to claim 13 , wherein said step of verifying comprises the step of determining a verifying level by external means.
Claim 24
Dependent Claim
25 words
A method according to claim 13 , wherein said step of verifying comprises the step of determining a verifying level having a constant voltage level.
Claim 25
Dependent Claim
25 words
A method according to claim 13 , wherein said step of verifying comprises the step of determining a verifying level having a variable voltage level.
Claim 26
Dependent Claim
29 words
A method according to claim 13 , wherein said step of verifying comprises the step of verifying whether a threshold voltage of a cell is above a determined level.
Claim 27
Independent Claim
136 words
A method for programming an array having a multiplicity of memory cells, the method comprising the steps of: per cell to be programmed, verifying a coarse programmed or non-programmed state of said cell; flagging those of said cells that verify as non-programmed during one of said verify steps after having previously verified as programmed; applying a coarse programming pulse having a coarse programming level to said non-programmed cells which are not flagged cells; repeating said steps of verifying, flagging and applying until all of said cells verify as programmed at least once; applying a fine programming pulse to said flagged cells; verifying a complete programmed state or a complete non-programmed state of said cell; and repeating the second steps of verifying and applying until all of said cells are very as fully programmed at least once.
Claim 28
Independent Claim
136 words
A method for programming an array having a multiplicity of memory cells, the method comprising the steps of: per cell to be programmed, verifying a coarse programmed or non-programmed state of said cell; flagging those of said cells that verify as non-programmed during one of said verify steps after having previously verified as programmed; applying a coarse programming pulse having a coarse programming level to said non-programmed cells which are not flagged cells; repeating said steps of verifying, flagging and applying until all of said cells verify as programmed at least once; applying a fine programming pulse to said flagged cells; verifying a complete programmed state or a complete non-programmed state of said cell; and repeating the second steps of verifying and applying until all of said cells are very as fully programmed at least once.
Claim 29
Dependent Claim
32 words
A method according to claim 25 , wherein the first step of verifying comprises verifying a cell threshold voltage to a level that is within α volts of a desired threshold voltage.
Claim 30
Dependent Claim
16 words
A method according to claim 26 , wherein α is in the range of 0.2-0.5 volt.
Claim 31
Dependent Claim
28 words
A method according to claim 26 , wherein α is the maximum change in threshold voltage that can be induced in a cell with a coarse programming pulse.
Claim 32
Dependent Claim
69 words
A method according to claim 25 , wherein said second step of verifying comprises the steps of: verifying if a threshold voltage of said cell is within α volts of a desired threshold voltage; and if said verified level is greater than said α volts, repeating said first steps of verifying, flagging and applying until all of said cells verify with within α volts of a desired threshold voltage.
Claim 33
Independent Claim
109 words
A method for an array having a multiplicity of memory cells, the method comprising the steps of: per cell to be programmed, verifying a programmed or non-programmed state of said cell; flagging those of said cells that verify as non-programmed during one of said program verify steps after having previously verified as programmed; applying a programming pulse having a programming level to said non-programmed cells which are not flagged cells; applying a recovery pulse having a recovery level lower than said programming level to said flagged cells; and repeating said steps of verifying, flagging, applying and applying until all of said cells verify as said programmed at least once.
Claim 34
Independent Claim
109 words
A method for an array having a multiplicity of memory cells, the method comprising the steps of: per cell to be programmed, verifying a programmed or non-programmed state of said cell; flagging those of said cells that verify as non-programmed during one of said program verify steps after having previously verified as programmed; applying a programming pulse having a programming level to said non-programmed cells which are not flagged cells; applying a recovery pulse having a recovery level lower than said programming level to said flagged cells; and repeating said steps of verifying, flagging, applying and applying until all of said cells verify as said programmed at least once.
Claim 35
Dependent Claim
13 words
A method according to claim 30 , wherein said recovery level is 0.05V.
References Cited (Backward Citations)
US5172338A
Cited
US5172338B1
Cited
US5172388A
Cited
US5523972A
Cited
US5870335A
Cited
US5991202A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-09-17 | 2005-03-19 | 2005-09-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-09-17 | 2009-03-19 | 2009-09-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-09-17 | 2013-03-19 | 2013-09-18 | $7700.00 | Window Closed / Lapsed |