US6287912B1
Expired / Lapsed
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Method of fabricating semiconductor device
Assignee: Longitude Licensing Ltd
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Filing: 1999-09-03
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Granted: 2001-09-11
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Expires: 2019-09-03
Abstract
Abstract A mask for etching a relatively thin gate insulating film formed in a gate insulating film forming region is formed by patterning a photoresist film, and the mask is used for introducing an impurity for adjusting the threshold voltages of n-channel field-effect transistors and p-channel field-effect transistors having the relatively thin gate insulating film into regions on the semiconductor substrate not covered with the mask.
Inventors
- 👤 Hisao Asakura
- 👤 Yoshitaka Tadaki
- 👤 Toshihiro Sekiguchi
- 👤 Ryo Nagai
- 👤 Masafumi Miyamoto
- 👤 Masayuki Nakamura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 22:01
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/09; H10P; H10P10/00; H10D; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/0181; H10D84/02; H10D84/03; H10D84/038; H10B12/02; H10B12/03; H10B12/033; H10B12/05; Y; Y10; Y10S; Y10S438/00; Y10S438/981
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
184 words
A method of fabricating a semiconductor device comprising n-channel field-effect transistors and p-channel field-effect transistors, and having a semiconductor substrate provided thereon with a relatively thick gate insulating film and a relatively thin gate insulating film, said method comprising the steps of: (a) forming a first insulating film in regions in a surface of the semiconductor substrate in which the relatively thick gate insulating film and the relatively thin gate insulating film are to be formed; (b) forming a mask exposing a region in which the relatively thin gate insulating film is to be formed, and covering other regions following the step (a); (c) introducing an impurity for adjusting threshold voltages of n-channel field-effect transistors and p-channel field-effect transistors having the relatively thin gate insulating film into the exposed region not covered with the mask; (d) etching parts of the first insulating film, not covered with the mask by using the mask as an etching mask following the step (c); and (e) forming the relatively thick gate insulating film and the relatively thin gate insulating film on the semiconductor substrate following the step (d).
Claim 2
Independent Claim
184 words
A method of fabricating a semiconductor device comprising n-channel field-effect transistors and p-channel field-effect transistors, and having a semiconductor substrate provided thereon with a relatively thick gate insulating film and a relatively thin gate insulating film, said method comprising the steps of: (a) forming a first insulating film in regions in a surface of the semiconductor substrate in which the relatively thick gate insulating film and the relatively thin gate insulating film are to be formed; (b) forming a mask exposing a region in which the relatively thin gate insulating film is to be formed, and covering other regions following the step (a); (c) introducing an impurity for adjusting threshold voltages of n-channel field-effect transistors and p-channel field-effect transistors having the relatively thin gate insulating film into the exposed region not covered with the mask; (d) etching parts of the first insulating film, not covered with the mask by using the mask as an etching mask following the step (c); and (e) forming the relatively thick gate insulating film and the relatively thin gate insulating film on the semiconductor substrate following the step (d).
Claim 3
Dependent Claim
65 words
The method according to claim 1 , wherein gate electrodes of the n-channel field-effect transistors and the p-channel field-effect transistors having the relatively thin gate insulating film are of an n + -type, the n-channel field-effect transistors are of a surface channel type, the p-channel field-effect transistors are of a buried channel type, and the impurity for the threshold voltage adjustment forms p-type semiconductor regions.
Claim 4
Dependent Claim
82 words
The method according to claim 1 , further comprising, following the step (e), the steps of: forming a conductive film for forming gate electrodes on the relatively thick gate insulating film and the relatively thin gate insulating film formed on the semiconductor substrate; and forming gate electrodes of the n-channel field-effect transistors and the p-channel field-effect transistors having the relatively thick gate insulating film and those having the relatively thin gate insulating film by patterning the conductive film for forming gate electrodes.
Claim 5
Independent Claim
288 words
A method of fabricating a semiconductor device comprising n-channel field-effect transistors and p-channel field-effect transistors, and having a semiconductor substrate provided thereon with a relatively thick gate insulating film and a relatively thin gate insulating film, said method comprising the steps of: (a) forming a first mask having a pattern exposing first regions and covering other regions on the semiconductor substrate, and introducing an impurity for adjusting threshold voltage of n-channel field-effect transistors having the relatively thick gate insulating film in the exposed first regions of the semiconductor substrate; (b) forming a second mask having a pattern exposing second regions and covering other regions on the semiconductor substrate, and introducing an impurity for adjusting threshold voltage of p-channel field-effect transistors having the relatively thick gate insulating film into the exposed second regions of the semiconductor substrate; (c) after removing said second mask, forming a first insulating film in regions in which the relatively thick gate insulating film and the relatively thin gate insulating film are to be formed on the semiconductor substrate following the steps (a) and (b); (d) forming a third mask having a pattern exposing a region in which the relatively thin gate insulating film is to be formed, and covering other regions following the step (c); (e) introducing an impurity for adjusting threshold voltages of n-channel field-effect transistors and p-channel field-effect transistors having the relatively thin gate insulating film into the exposed regions; (f) removing parts of the first insulating film not covered with the third mask by etching using the third mask as an etching mask following the step (e); and (g) forming the relatively thick gate insulating film and the relatively thin gate insulating film on the semiconductor substrate following the step (f).
Claim 6
Independent Claim
288 words
A method of fabricating a semiconductor device comprising n-channel field-effect transistors and p-channel field-effect transistors, and having a semiconductor substrate provided thereon with a relatively thick gate insulating film and a relatively thin gate insulating film, said method comprising the steps of: (a) forming a first mask having a pattern exposing first regions and covering other regions on the semiconductor substrate, and introducing an impurity for adjusting threshold voltage of n-channel field-effect transistors having the relatively thick gate insulating film in the exposed first regions of the semiconductor substrate; (b) forming a second mask having a pattern exposing second regions and covering other regions on the semiconductor substrate, and introducing an impurity for adjusting threshold voltage of p-channel field-effect transistors having the relatively thick gate insulating film into the exposed second regions of the semiconductor substrate; (c) after removing said second mask, forming a first insulating film in regions in which the relatively thick gate insulating film and the relatively thin gate insulating film are to be formed on the semiconductor substrate following the steps (a) and (b); (d) forming a third mask having a pattern exposing a region in which the relatively thin gate insulating film is to be formed, and covering other regions following the step (c); (e) introducing an impurity for adjusting threshold voltages of n-channel field-effect transistors and p-channel field-effect transistors having the relatively thin gate insulating film into the exposed regions; (f) removing parts of the first insulating film not covered with the third mask by etching using the third mask as an etching mask following the step (e); and (g) forming the relatively thick gate insulating film and the relatively thin gate insulating film on the semiconductor substrate following the step (f).
Claim 7
Dependent Claim
63 words
The method according to claim 4 , wherein the exposed first regions defined in the step (a) are regions for the n-channel field-effect transistors respectively having the relatively thick gate insulating film and the relatively thin gate insulating film, and a first impurity is introduced into the first regions not covered with the first mask to form p-type regions in the semiconductor substrate.
Claim 8
Dependent Claim
57 words
The method according to claim 4 , wherein the exposed second regions defined in the step (b) are regions for the p-channel field-effect transistors respectively having the relatively thick gate insulating film and the relatively thin gate insulating film, and a second impurity is introduced into the second regions to form n-type regions in the semiconductor substrate.
Claim 9
Dependent Claim
124 words
The method according to claim 4 , wherein gate electrodes of the n-channel field-effect transistors and the p-channel field-effect transistors having the relatively thick gate insulating film and the relatively thin gate insulating film are of an n + -type, the n-channel field-effect transistors having the relatively thick gate insulating film and the relatively thin gate insulating film are of a surface channel type, the p-channel field-effect transistors having the relatively thick gate insulating film and the relatively thin gate insulating film are of a buried channel type, and the impurity for the threshold voltage adjustment of the n-channel field-effect transistors and the p-channel field-effect transistors having the relatively thick gate insulating film and the relatively thin gate insulating film forms p-type semiconductor regions.
Claim 10
Dependent Claim
88 words
The method according to claim 4 , wherein the type of the impurity for adjusting the threshold voltages of the n-channel field-effect transistors and the p-channel field-effect transistors having the relatively thick gate insulating film, and the energy necessary for the ion-implantation of the impurity, are the same as the type of the impurity for adjusting the threshold voltages of the n-channel field-effect transistors and the p-channel field-effect transistors having the relatively thin gate insulating film, and the design energy necessary for the ion-implantation of the impurity, respectively.
Claim 11
Dependent Claim
81 words
The method according to claim 4 , further comprising, following the step (g), the steps of: forming a conductive film for forming gate electrodes on the relatively thick gate insulating film and the relatively thin gate insulating film on the semiconductor substrate; and forming gate electrodes of the n-channel field-effect transistors and the p-channel field-effect transistors having the relatively thick gate insulating film and those having the relatively thin gate insulating film by patterning the conductive film for forming gate electrodes.
Claim 12
Independent Claim
314 words
A method of fabricating a semiconductor device comprising n-channel field-effect transistors and p-channel field-effect transistors, and having a semiconductor substrate provided thereon with a relatively thick gate insulating film and a relatively thin gate insulating film, said method comprising the steps of: (a) forming a first mask exposing regions for n-channel field-effect transistors respectively having the relatively thick gate insulating film and the relatively thin gate insulating film, and a memory region on the semiconductor substrate, and covering other regions on the semiconductor substrate, and introducing an impurity for adjusting threshold voltage of the n-channel field-effect transistors having the relatively thick gate insulating film into the exposed regions; (b) forming a second mask exposing regions for p-channel field-effect transistors respectively having the relatively thick gate insulating film and the relatively thin gate insulating film on the semiconductor substrate, and covering other regions on the semiconductor substrate, and introducing an impurity for adjusting threshold voltage of the p-channel field-effect transistors having the relatively thick gate insulating film into the exposed regions; (c) after removing said second mask, forming a first insulating film in regions for the relatively thick gate insulating film and the relatively thin gate insulating film, and the memory region following the steps (a) and (b); (d) forming a third mask exposing the region for the relatively thin gate insulating film, and covering other regions following the step (c); (e) introducing an impurity for collectively adjusting threshold voltages of the n-channel field-effect transistors having the relatively thin gate insulating film into the exposed regions not covered with the third mask; (f) removing exposed parts of the first insulating film not covered with the third mask by etching using the third mask as an etching mask following the step (e); and (g) forming the relatively thick gate insulating film and the relatively thin gate insulating film on the semiconductor substrate following the step (f).
Claim 13
Independent Claim
314 words
A method of fabricating a semiconductor device comprising n-channel field-effect transistors and p-channel field-effect transistors, and having a semiconductor substrate provided thereon with a relatively thick gate insulating film and a relatively thin gate insulating film, said method comprising the steps of: (a) forming a first mask exposing regions for n-channel field-effect transistors respectively having the relatively thick gate insulating film and the relatively thin gate insulating film, and a memory region on the semiconductor substrate, and covering other regions on the semiconductor substrate, and introducing an impurity for adjusting threshold voltage of the n-channel field-effect transistors having the relatively thick gate insulating film into the exposed regions; (b) forming a second mask exposing regions for p-channel field-effect transistors respectively having the relatively thick gate insulating film and the relatively thin gate insulating film on the semiconductor substrate, and covering other regions on the semiconductor substrate, and introducing an impurity for adjusting threshold voltage of the p-channel field-effect transistors having the relatively thick gate insulating film into the exposed regions; (c) after removing said second mask, forming a first insulating film in regions for the relatively thick gate insulating film and the relatively thin gate insulating film, and the memory region following the steps (a) and (b); (d) forming a third mask exposing the region for the relatively thin gate insulating film, and covering other regions following the step (c); (e) introducing an impurity for collectively adjusting threshold voltages of the n-channel field-effect transistors having the relatively thin gate insulating film into the exposed regions not covered with the third mask; (f) removing exposed parts of the first insulating film not covered with the third mask by etching using the third mask as an etching mask following the step (e); and (g) forming the relatively thick gate insulating film and the relatively thin gate insulating film on the semiconductor substrate following the step (f).
Claim 14
Dependent Claim
38 words
The method according to claim 10 further comprising the step of forming p-type semiconductor regions in the semiconductor substrate by introducing a first impurity into the regions not covered with the first mask formed by the step (a).
Claim 15
Dependent Claim
38 words
The method according to claim 10 further comprising the step of forming n-type semiconductor regions in the semiconductor substrate by introducing a second impurity into the regions not covered with the second mask formed by the step (b).
Claim 16
Dependent Claim
100 words
The method according to claim 10 , wherein gate electrodes of all the n-channel field-effect transistors and the p-channel field-effect transistors formed on the semiconductor substrate are of an n + -type, all the n-channel field-effect transistors formed on the semiconductor substrate are of a surface channel type, all the p-channel field-effect transistors formed on the semiconductor substrate are of a buried channel type, and the impurity for the threshold voltage adjustment of the n-channel field-effect transistors and the p-channel field-effect transistors having the relatively thick gate insulating film and the relatively thin gate insulating film forms p-type semiconductor regions.
Claim 17
Dependent Claim
88 words
The method according to claim 10 , wherein the type of the impurity for adjusting the threshold voltages of the n-channel field-effect transistors and the p-channel field-effect transistors having the relatively thick gate insulating film, and the energy necessary for the ion-implantation of the impurity, are the same as the type of the impurity for adjusting the threshold voltages of the n-channel field-effect transistors and the p-channel field-effect transistors having the relatively thin gate insulating film, and the design energy necessary for the ion-implantation of the impurity, respectively.
Claim 18
Dependent Claim
67 words
The method according to claim 10 further comprising, following the step (g), the steps of: forming a conductive film for forming gate electrodes on the relatively thick gate insulating film and the relatively thin gate insulating film formed on the semiconductor substrate; and forming gate electrodes of all the n-channel field-effect transistors and all the p-channel field-effect transistors by patterning the conductive film for forming gate electrodes.
Claim 19
Dependent Claim
59 words
The method according to claim 10 further comprising, preceding the step (c), the step of forming a memory forming mask exposing the memory region and covering other regions on the semiconductor substrate, and introducing an impurity for adjusting the threshold voltage of memory cell select n-channel field-effect transistors in the memory region not covered with the memory forming mask.
Claim 20
Independent Claim
367 words
A method of fabricating a semiconductor device comprising n-channel field-effect transistors and p-channel field-effect transistors, and having a semiconductor substrate provided thereon with a relatively thick gate insulating film and a relatively thin gate insulating film, said method comprising the steps of: (a) forming a first mask exposing regions for n-channel field-effect transistors respectively having the relatively thick gate insulating film and the relatively thin gate insulating film, and covering other regions on the semiconductor substrate; (b) introducing an impurity for adjusting threshold voltage of the n-channel field-effect transistors having the relatively thick gate insulating film into the exposed regions not covered with the first mask; (c) forming p-type semiconductor regions in the semiconductor substrate by introducing a first impurity into the regions not covered with the first mask; (d) forming a second mask exposing regions for p-channel field-effect transistors respectively having the relatively thick gate insulating film and the relatively thin gate insulating film, and covering other regions on the semiconductor substrate; (e) introducing an impurity for adjusting threshold voltage of the p-channel field-effect transistor having the relatively thick gate insulating film into the exposed regions not covered with the second mask; (f) forming n-type semiconductor regions in the semiconductor substrate by introducing a second impurity into the exposed regions of the semiconductor substrate not covered with the second mask; (g) after removing said second mask, forming a first insulating film in regions on the semiconductor substrate for the relatively thick gate insulating film and the relatively thin gate insulating film following the steps (a) to (f); (h) forming a third mask exposing the region for the relatively thin gate insulating film, and covering other regions on the semiconductor substrate following the step (g); (i) introducing an impurity for adjusting threshold voltages of the n-channel field-effect transistors and the p-channel field-effect transistors having the relatively thin gate insulating film in an exposed region not covered with the third mask; (j) removing exposed parts of the first insulating film by etching using the third mask as an etching mask following the step (i); and (k) forming the relatively thick gate insulating film and the relatively thin gate insulating film on the semiconductor substrate following the step (j).
Claim 21
Independent Claim
367 words
A method of fabricating a semiconductor device comprising n-channel field-effect transistors and p-channel field-effect transistors, and having a semiconductor substrate provided thereon with a relatively thick gate insulating film and a relatively thin gate insulating film, said method comprising the steps of: (a) forming a first mask exposing regions for n-channel field-effect transistors respectively having the relatively thick gate insulating film and the relatively thin gate insulating film, and covering other regions on the semiconductor substrate; (b) introducing an impurity for adjusting threshold voltage of the n-channel field-effect transistors having the relatively thick gate insulating film into the exposed regions not covered with the first mask; (c) forming p-type semiconductor regions in the semiconductor substrate by introducing a first impurity into the regions not covered with the first mask; (d) forming a second mask exposing regions for p-channel field-effect transistors respectively having the relatively thick gate insulating film and the relatively thin gate insulating film, and covering other regions on the semiconductor substrate; (e) introducing an impurity for adjusting threshold voltage of the p-channel field-effect transistor having the relatively thick gate insulating film into the exposed regions not covered with the second mask; (f) forming n-type semiconductor regions in the semiconductor substrate by introducing a second impurity into the exposed regions of the semiconductor substrate not covered with the second mask; (g) after removing said second mask, forming a first insulating film in regions on the semiconductor substrate for the relatively thick gate insulating film and the relatively thin gate insulating film following the steps (a) to (f); (h) forming a third mask exposing the region for the relatively thin gate insulating film, and covering other regions on the semiconductor substrate following the step (g); (i) introducing an impurity for adjusting threshold voltages of the n-channel field-effect transistors and the p-channel field-effect transistors having the relatively thin gate insulating film in an exposed region not covered with the third mask; (j) removing exposed parts of the first insulating film by etching using the third mask as an etching mask following the step (i); and (k) forming the relatively thick gate insulating film and the relatively thin gate insulating film on the semiconductor substrate following the step (j).
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2004-09-10 | 2005-03-12 | 2005-09-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-09-10 | 2009-03-12 | 2009-09-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-09-10 | 2013-03-12 | 2013-09-11 | $7700.00 | Window Closed / Lapsed |