US6284657B1
Expired / Lapsed
US
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Non-metallic barrier formation for copper damascene type interconnects
Assignee: GlobalFoundries Singapore Pte Ltd
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Filing: 2000-02-25
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Granted: 2001-09-04
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Expires: 2020-02-25
Abstract
Abstract A method for forming dual-damascene type conducting interconnects with non-metallic barriers that protect said interconnects from fluorine out-diffusion from surrounding low-k, fluorinated dielectric materials. One embodiment of the method is particularly suited for forming such interconnects in microelectronics fabrications of the sub 0.15 micron generation.
Inventors
- 👤 Simon Chooi
- 👤 Subhash Gupta
- 👤 Mei-Sheng Zhou
- 👤 Sangki Hong
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 11:52
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/074; H10W20/075; H10W20/076; H10W20/081; H10W20/084; H10W20/093; H10W20/096
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
213 words
A method for forming a dual-damascene type conducting interconnect within a microelectronics fabrication, comprising: providing a layered structure such as is used in a microelectronics fabrication, said structure comprising a conducting layer, on which has been formed a passivating layer, on which has been formed a first dielectric layer, on which has been formed an etch-stop layer, on which has been formed a second dielectric layer and on which has been formed a capping layer; patterning and etching a trench and via structure that passes through said capping layer, said second dielectric layer, said etch-stop layer and said first dielectric layer and extends, thereby, to said passivating layer; forming a non-metallic layer of fluorine diffusion resistant material over all surfaces of said trench and via formation such that said non-metallic layer conformally covers said surfaces; etching away portions of said non-metallic layer of fluorine diffusion resistant material to form a fluorine diffusion resistant barrier “spacer” over the side-walls of said trench and via formation; etching away the exposed portion of said passivation layer to expose the conducting layer; forming a metallic barrier layer over all surfaces of said trench and via formation such that said metallic barrier layer conformally covers said surfaces; depositing copper over all surfaces of said trench and via formation.
Claim 2
Independent Claim
213 words
A method for forming a dual-damascene type conducting interconnect within a microelectronics fabrication, comprising: providing a layered structure such as is used in a microelectronics fabrication, said structure comprising a conducting layer, on which has been formed a passivating layer, on which has been formed a first dielectric layer, on which has been formed an etch-stop layer, on which has been formed a second dielectric layer and on which has been formed a capping layer; patterning and etching a trench and via structure that passes through said capping layer, said second dielectric layer, said etch-stop layer and said first dielectric layer and extends, thereby, to said passivating layer; forming a non-metallic layer of fluorine diffusion resistant material over all surfaces of said trench and via formation such that said non-metallic layer conformally covers said surfaces; etching away portions of said non-metallic layer of fluorine diffusion resistant material to form a fluorine diffusion resistant barrier “spacer” over the side-walls of said trench and via formation; etching away the exposed portion of said passivation layer to expose the conducting layer; forming a metallic barrier layer over all surfaces of said trench and via formation such that said metallic barrier layer conformally covers said surfaces; depositing copper over all surfaces of said trench and via formation.
Claim 3
Dependent Claim
22 words
The method of claim 1 wherein the conducting layer is a copper (Cu) layer of thickness between 2,000 angstroms and 15,000 angstroms.
Claim 4
Dependent Claim
41 words
The method of claim 1 wherein the conducting layer is comprised of one or more of the materials selected from the group consisting of aluminum-copper alloy, tungsten, titanium and titanium oxide and has a thickness between 2,000 angstroms and 15,000 angstroms.
Claim 5
Dependent Claim
23 words
The method of claim 1 wherein the passivating layer is a silicon nitride (SiN) layer of thickness between 50 angstroms and 5,000 angstroms.
Claim 6
Dependent Claim
22 words
The method of claim 1 wherein the first dielectric layer is a layer of fluorinated dielectric material of low dielectric constant (low-k).
Claim 7
Dependent Claim
39 words
The method of claim 5 wherein the layer of fluorinated dielectric material is selected from the group consisting of FSG, Teflon, Parylene-F, amorphous fluorocarbon and fluorinated polyimide and is formed to a thickness between 1,000 angstroms and 10,000 angstroms.
Claim 8
Dependent Claim
22 words
The method of claim 1 wherein the etch-stop layer is a layer of SiN of thickness between 50 angstroms and 5,000 angstroms.
Claim 9
Dependent Claim
22 words
The method of claim 1 wherein the second dielectric layer is a layer of fluorinated dielectric material of low dielectric constant (low-k).
Claim 10
Dependent Claim
39 words
The method of claim 8 wherein the layer of fluorinated dielectric material is selected from the group consisting of FSG, Teflon, Parylene-F, amorphous fluorocarbon and fluorinated polyimide and is formed to a thickness between 1,000 angstroms and 10,000 angstroms.
Claim 11
Dependent Claim
23 words
The method of claim 1 wherein the capping layer is a SiN layer formed to a thickness between 50 angstroms and 5,000 angstroms.
Claim 12
Dependent Claim
49 words
The method of claim 1 wherein the trench and via formation is patterned and etched using a trench first, via second method, said trench having a range of widths between 0.25 microns and 2.0 microns and said via having a range of widths between 0.15 microns and 0.4 microns.
Claim 13
Dependent Claim
44 words
The method of claim 11 wherein the etch is a plasma assisted etch wherein the etching chemistry comprises one or more of the gases selected from the group consisting of: fluorocarbon(s), fluorine-substituted hydrocarbon(s), fluorosulfur, chlorine, hydrogen bromide, oxygen, nitrogen, argon, hydrogen and carbon monoxide.
Claim 14
Dependent Claim
49 words
The method of claim 1 wherein the trench and via formation is patterned and etched using a via first, trench second method, said trench having a range of widths between 0.25 microns and 2.0 microns and said via having a range of widths between 0.15 microns and 0.4 microns.
Claim 15
Dependent Claim
44 words
The method of claim 13 wherein the etch is a plasma assisted etch wherein the etching chemistry comprises one or more of the gases selected from the group consisting of: fluorocarbon(s), fluorine-substituted hydrocarbon(s), fluorosulflur, chlorine, hydrogen bromide, oxygen, nitrogen, argon, hydrogen and carbon monoxide.
Claim 16
Dependent Claim
49 words
The method of claim 1 wherein the trench and via formation is patterned and etched using a self alignment (buried via) method, said trench having a range of widths between 0.25 microns and 2.0 microns and said via having a range of widths between 0.15 microns and 0.4 microns.
Claim 17
Dependent Claim
44 words
The method of claim 15 wherein the etch is a plasma assisted etch wherein the etching chemistry comprises one or more of the gases selected from the group consisting of: fluorocarbon(s), fluorine-substituted hydrocarbon(s), fluorosulfur, chlorine, hydrogen bromide, oxygen, nitrogen, argon, hydrogen and carbon monoxide.
Claim 18
Dependent Claim
64 words
The method of claim 1 wherein the non-metallic layer of fluorine diffusion resistant material is a layer of fluorine diffusion resistant material selected from the group consisting of: silicon carbide, boron nitride, carbon nitride, boron carbon nitride and boron carbide, said layer being formed by chemical vapor deposition (CVD) or physical vapor deposition (PVD) to a thickness of between 500 angstroms and 5,000 angstroms.
Claim 19
Dependent Claim
57 words
The method of claim 1 wherein the non-metallic layer of fluorine diffusion resistant material is etched with a plasma assisted etch wherein the etching chemistry comprises one or more of the gases selected from the group consisting of: chlorine, boron trichloride, oxygen, hydrogen, nitrogen, forming gas (a mixture of hydrogen and nitrogen) fluorocarbon(s), fluorine-substituted hydrocarbon(s) and argon.
Claim 20
Dependent Claim
41 words
The method of claim 1 wherein the passivation layer is etched with a plasma assisted etch wherein the etching chemistry comprises one or more of the gases selected from the group consisting of: fluorocarbon(s), fluorine-substituted hydrocarbon(s), hydrocarbon(s), oxygen, nitrogen and argon.
Claim 21
Dependent Claim
47 words
The method of claim 1 wherein the metallic barrier layer is a layer of material selected from the group consisting of: tantalum (Ta), tantalum nitride (TaN), metal-silicon-nitride, titanium nitride (TiN) and tungsten nitride (WN), said layer being formed to a thickness between 50 angstroms and 2,000 angstroms.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2004-09-03 | 2005-03-05 | 2005-09-04 | $2000.00 | Window Closed / Lapsed |
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