Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
162 words
A method for fabricating a silicon on insulator (SOI) device, comprising the steps of: preparing a silicon substrate; forming a conduction layer in the substrate; forming a buried oxide layer having a first and a second contact holes over the silicon substrate including a conduction layer; forming a first and a second contact layers within the first and the second contact holes of the buried oxide layer, respectively to contact with the conduction layer; forming a silicon layer over the buried oxide layer including the first and the second contact layers; forming an isolation layer in the silicon layer to define a device formation region; forming a gate on the device formation region of the silicon layer over the first contact layer; forming a source region and a drain region at the both side of the gate in the device formation region; and forming an impurity region for well pick-up in the silicon layer to be contacted with the second contact layer.
Claim 2
Independent Claim
162 words
A method for fabricating a silicon on insulator (SOI) device, comprising the steps of: preparing a silicon substrate; forming a conduction layer in the substrate; forming a buried oxide layer having a first and a second contact holes over the silicon substrate including a conduction layer; forming a first and a second contact layers within the first and the second contact holes of the buried oxide layer, respectively to contact with the conduction layer; forming a silicon layer over the buried oxide layer including the first and the second contact layers; forming an isolation layer in the silicon layer to define a device formation region; forming a gate on the device formation region of the silicon layer over the first contact layer; forming a source region and a drain region at the both side of the gate in the device formation region; and forming an impurity region for well pick-up in the silicon layer to be contacted with the second contact layer.
Claim 3
Dependent Claim
36 words
The method as claimed in claim 1 , wherein the conduction layer is formed in a surface of the silicon substrate by ion implanting any ones of boron ions or phosphorus ions in the silicon substrate.
Claim 4
Dependent Claim
23 words
The method as claimed in claim 2 , wherein a dose of the implanted ion is 1×10 14 −1×10 16 ions/cm 2 .
Claim 5
Dependent Claim
18 words
The method as claimed in claim 1 , wherein the conduction layer is comprised of a polysilicon pattern.
Claim 6
Dependent Claim
37 words
The method as claimed in claim 4 , after the conduction layer formation step, further comprising the steps of; depositing a planarization layer over the silicon substrate; and flowing the planarization layer to expose the polysilicon pattern.
Claim 7
Dependent Claim
25 words
The method as claimed in claim 1 , wherein the buried oxide layer is formed by any one of thermal oxidation or chemical vapor deposition.
Claim 8
Dependent Claim
30 words
The method as claimed in claim 1 , wherein the first and second contact layers are comprised of doped single crystal silicon or doped polysilicon formed by selective epitaxial growth.
Claim 9
Dependent Claim
25 words
The method as claimed in claim 1 , wherein the impurity region for well pick-up is formed in the silicon layer of a peripheral region.
Claim 10
Dependent Claim
23 words
The method as claimed in claim 1 , wherein the impurity region for well pick-up has an opposite conductivity to the source region.