US6280908B1
Expired / Lapsed
US
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Post-development resist hardening by vapor silylation
Assignee: International Business Machines Corp
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Filing: 1999-04-15
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Granted: 2001-08-28
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Expires: 2019-04-15
Abstract
Abstract A method of improving the etch resistance of a patterned imageable resist prior to patterning an underlying substrate layer is provided. Specifically, the method employed by the present invention comprises applying a layer of an imageable resist to a substrate layer; patterning the layer of imageable resist by removing selective areas thereof; and treating the patterned imageable resist with an atmosphere comprising molecules of a hardening agent so as to obtain a hardened resist surface which etches at a slower rate than that of the untreated resist.
Inventors
- 👤 Ari Aviram
- 👤 Michael Joseph Rooks
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 18:17
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/26; G03F7/40; G03F7/405
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
107 words
A method of improving the etch resistance of a patterned resist prior to patterning an underlying substrate layer, said method comprising the steps of: (a) applying a layer of an imageable resist to a substrate layer; (b) patterning the layer of imageable resist by removing selective areas thereof; and (c) treating the patterned resist with an atmosphere comprising molecules of a hardening agent so as to obtain a hardened resist surface that etches at a slower rate than that of the untreated resist, wherein said hardening agent includes a metalloid or metallic element selected from Group IIA, IVB, VIII and IIIA of the Periodic Table of Elements.
Claim 2
Independent Claim
107 words
A method of improving the etch resistance of a patterned resist prior to patterning an underlying substrate layer, said method comprising the steps of: (a) applying a layer of an imageable resist to a substrate layer; (b) patterning the layer of imageable resist by removing selective areas thereof; and (c) treating the patterned resist with an atmosphere comprising molecules of a hardening agent so as to obtain a hardened resist surface that etches at a slower rate than that of the untreated resist, wherein said hardening agent includes a metalloid or metallic element selected from Group IIA, IVB, VIII and IIIA of the Periodic Table of Elements.
Claim 3
Dependent Claim
31 words
The method of claim 1 wherein said substrate layer is a semiconductor chip or wafer, a circuit board, an interconnect structure, a metal, an inorganic dielectric material or any combination thereof.
Claim 4
Dependent Claim
19 words
The method of claim 2 wherein said inorganic dielectric material is SiO 2 or Si 3 N 4 .
Claim 5
Dependent Claim
33 words
The method of claim 1 wherein said substrate layer is composed of, or contains, a semiconducting material selected from the group consisting of Si, Ge, GeSi, GaAs, InAs, INP and other III/V compounds.
Claim 6
Dependent Claim
17 words
The method of claim 1 wherein said imageable resist is a material which is sensitive to radiation.
Claim 7
Dependent Claim
24 words
The method of claim 1 wherein said imageable resist comprises at least a base polymer resin which undergoes chemical changes when exposed to radiation.
Claim 8
Dependent Claim
14 words
The method of claim 1 wherein said imageable resist is a positive tone resist.
Claim 9
Dependent Claim
17 words
The method of claim 7 wherein said positive tone resist includes an acid-sensitive or base-sensitive protecting group.
Claim 10
Dependent Claim
42 words
The method of claim 8 wherein said positive tone resist comprises a base polymer selected from the group consisting of novolak, hydroxystyrene, an acrylate, a methacrylate, an acrylamide, a methacrylamide, an itaconate, an itaconic half ester, a cycloolefin and any combination thereof.
Claim 11
Dependent Claim
23 words
The method of claim 9 wherein said positive tone resist further comprises styrene, hydroxystyrene, acrylic acid, methacrylic acid, itaconic acid or an anhydride.
Claim 12
Dependent Claim
23 words
The method of claim 1 wherein said imageable resist is a negative tone resist which includes a cross-linkable polymer and a cross-linking agent.
Claim 13
Dependent Claim
22 words
The method of claim 1 wherein said imageable resist is applied by chemical vapor deposition, plasma vapor deposition, sputtering or spin coating.
Claim 14
Dependent Claim
18 words
The method of claim 1 wherein step (b) includes exposure to radiation and development with a developer solvent.
Claim 15
Dependent Claim
14 words
The method of claim 13 wherein step (b) further includes pre-baking, post-baking or both.
Claim 16
Dependent Claim
25 words
The method of claim 13 wherein said exposure includes mid-UV, deep-UV, extreme UV, e-beam, x-ray or ion beam radiation or a maskless scanning probe lithography.
Claim 17
Dependent Claim
30 words
The method of claim 1 wherein said metalloid or metallic element is Mg, Ca, Ti, Zr, Fe, Co, Ni, Ru, Rh, Pd, Pt, Ir, Cu, As, Au or alloys thereof.
Claim 18
Dependent Claim
16 words
The method of claim 1 wherein said molecules of said hardening agent are formed by pyrolysis.
Claim 19
Dependent Claim
23 words
The method of claim 1 wherein from about 1 to about 25 wt. % of said hardening agent is incorporated into said resist.
Claim 20
Dependent Claim
19 words
The method of claim 1 further comprising etching exposed areas of said substrate layer using a dry etching technique.
Claim 21
Dependent Claim
12 words
The method of claim 19 further comprising stripping the resist after etching.
References Cited (Backward Citations)
US5756255A
Cited
US6063543A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2004-08-27 | 2005-02-26 | 2005-08-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-08-27 | 2009-02-26 | 2009-08-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-08-27 | 2013-02-26 | 2013-08-28 | $7700.00 | Window Closed / Lapsed |