US6271880B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Apparatus having a photoelectric conversion element and a transistor, in which the duration of the on time of the transistor is based on a detected temperature of the conversion element or transistor
Assignee: Canon Inc
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Filing: 1997-02-25
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Granted: 2001-08-07
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Expires: 2017-02-25
Abstract
Abstract A photoelectric conversion apparatus has a photoelectric conversion element, a transistor for transferring a signal from the photoelectric conversion element, and a driver for supplying a drive pulse to the control electrode of the transistor. A temperature of the photoelectric conversion element and/or transistor is measured. The measured temperature is compared to a reference temperature, and based on that comparison, a length of the supplied drive pulse is made shorter or longer.
Inventors
- 👤 Toshio Kameshima
- 👤 Noriyuki Kaifu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 08:58
CPC Classifications
H; H04; H04N; H04N25/00; H04N25/60; H04N25/63; H04N25/30; H04N25/50; H04N25/53
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
184 words
A photoelectric conversion apparatus comprising a photoelectric conversion element for converting an incident light signal to an electric signal, a transistor for performing a transfer control of the electric signal from the photoelectric conversion element, and driving means for applying a transfer control signal having a pulse length to a control electrode of the transistor, said photoelectric conversion apparatus comprising: control means for controlling said driving means so as to detect a temperature of said photoelectric conversion element or said transistor and to cause a change in the pulse length of the transfer control signal, so that in a case where the detected temperature is higher than a reference temperature, the pulse length of the transfer control signal is made shorter relative to a pulse length corresponding to the reference temperature, thereby shortening a transfer time of the electric signal, and in a case where the detected temperature is lower than the reference temperature, the pulse length of the transfer control signal is made longer relative to the pulse length corresponding to the reference temperature, thereby lengthening the transfer time of the electric signal.
Claim 2
Dependent Claim
184 words
A photoelectric conversion apparatus comprising a photoelectric conversion element for converting an incident light signal to an electric signal, a transistor for performing a transfer control of the electric signal from the photoelectric conversion element, and driving means for applying a transfer control signal having a pulse length to a control electrode of the transistor, said photoelectric conversion apparatus comprising: control means for controlling said driving means so as to detect a temperature of said photoelectric conversion element or said transistor and to cause a change in the pulse length of the transfer control signal, so that in a case where the detected temperature is higher than a reference temperature, the pulse length of the transfer control signal is made shorter relative to a pulse length corresponding to the reference temperature, thereby shortening a transfer time of the electric signal, and in a case where the detected temperature is lower than the reference temperature, the pulse length of the transfer control signal is made longer relative to the pulse length corresponding to the reference temperature, thereby lengthening the transfer time of the electric signal.
Claim 3
Dependent Claim
42 words
The photoelectric conversion apparatus according to claim 1 , wherein said photoelectric conversion element and said transistor are provided on a same substrate and said control means comprises temperature detecting means for detecting a temperature of said substrate as the detected temperature.
Claim 4
Dependent Claim
30 words
The photoelectric conversion apparatus according to claim 2 , wherein said temperature detecting means is provided on the same substrate as said photoelectric conversion element and said transistor are provided.
Claim 5
Dependent Claim
38 words
The photoelectric conversion apparatus according to claim 1 , comprising reading means for reading the electric signal transferred from said transistor, wherein said control means determines the detected temperature, based on an output signal from said reading means.
Claim 6
Dependent Claim
30 words
The photoelectric conversion apparatus according to claim 4 , wherein said control means determines the detected temperature, based on an output signal from said reading means in a dark state.
Claim 7
Dependent Claim
33 words
The photoelectric conversion apparatus according to claim 1 , comprising a light source for supplying a light signal incident to said photoelectric conversion element, and means for controlling on/off of said light source.
Claim 8
Dependent Claim
43 words
The photoelectric conversion apparatus according to claim 6 , said photoelectric conversion apparatus comprising means for effecting changeover between a temperature detection mode and a read mode, wherein in said temperature detection mode said light source is off to achieve the dark state.
Claim 9
Dependent Claim
36 words
The photoelectric conversion apparatus according to claim 6 , wherein said light source comprises an X-ray source and a wavelength converter for converting at least part of X-rays emitted from the X-ray source to visible light.
Claim 10
Dependent Claim
24 words
The photoelectric conversion apparatus according to claim 1 , wherein said photoelectric conversion element and said transistor are formed using an amorphous silicon process.
Claim 11
Dependent Claim
18 words
The photoelectric conversion apparatus according to claim 1 , wherein said photoelectric conversion element is a pin photodiode.
Claim 12
Dependent Claim
18 words
The photoelectric conversion apparatus according to claim 1 , wherein said photoelectric conversion element is an MIS sensor.
Claim 13
Dependent Claim
20 words
The photoelectric conversion apparatus according to claim 1 , comprising detected temperature detecting means for performing detection of said temperature.
Claim 14
Dependent Claim
17 words
The photoelectric conversion apparatus according to claim 12 , wherein said temperature detecting means comprises a thermocouple.
Claim 15
Dependent Claim
18 words
The photoelectric conversion apparatus according to claim 12 , wherein said temperature detecting means comprises a semiconductor element.
Claim 16
Dependent Claim
16 words
The photoelectric conversion apparatus according to claim 14 , wherein said semiconductor element is a diode.
Claim 17
Dependent Claim
17 words
The photoelectric conversion apparatus according to claim 12 , wherein said temperature detecting means comprises a resistor.
Claim 18
Dependent Claim
17 words
The photoelectric conversion apparatus according to claim 12 , wherein said temperature detecting means comprises a bi-metal.
Claim 19
Dependent Claim
93 words
A driving method of a photoelectric conversion apparatus having a photoelectric conversion element, a transistor for transferring a signal from said photoelectric conversion element, and driving means for supplying a drive pulse having a pulse length to a control electrode of said transistor, said driving method comprising: a first step of measuring a temperature of said photoelectric conversion element or transistor; and a second step of comparing a measured temperature obtained in the first step with a reference temperature, and changing the pulse length of said drive pulse according to the compared temperatures.
Claim 20
Dependent Claim
93 words
A driving method of a photoelectric conversion apparatus having a photoelectric conversion element, a transistor for transferring a signal from said photoelectric conversion element, and driving means for supplying a drive pulse having a pulse length to a control electrode of said transistor, said driving method comprising: a first step of measuring a temperature of said photoelectric conversion element or transistor; and a second step of comparing a measured temperature obtained in the first step with a reference temperature, and changing the pulse length of said drive pulse according to the compared temperatures.
Claim 21
Dependent Claim
23 words
The driving method according to claim 18 , wherein said measured temperature is a temperature near said photoelectric conversion element or said transistor.
Claim 22
Dependent Claim
18 words
The driving method according to claim 19 , wherein said measured temperature is measured utilizing temperature detecting means.
Claim 23
Dependent Claim
31 words
The driving method according to claim 18 , wherein said measured temperature is determined based on a quantity of charge accumulated based on a dark current of said photoelectric conversion element.
Claim 24
Dependent Claim
52 words
The driving method according to claim 21 , comprising a step of performing an accumulation operation of said dark current for a desired time in such a state that light is not incident to said photoelectric conversion element, and a step of transferring the charge during the length of the drive pulse.
Claim 25
Dependent Claim
28 words
The driving method according to claim 18 , wherein said second step comprises shortening the drive pulse length when the measured temperature is higher than the reference temperature.
Claim 26
Dependent Claim
28 words
The driving method according to claim 18 , wherein said second step comprises lengthening the drive pulse length when the measured temperature is lower than the reference temperature.
Claim 27
Dependent Claim
97 words
An image input apparatus comprising: a two dimensional area sensor having a plurality of pixels each comprising a thin film transistor for converting an incident quantity of X-rays into an electric signal and for outputting the electric signal; temperature detecting means arranged for obtaining information regarding temperature of at least one of said plurality of pixels; and control means for determining a pulse length of a drive pulse to be applied to a control electrode of the thin film transistor, wherein the drive pulse length is based on the temperature information obtained from said temperature detecting means.
Claim 28
Dependent Claim
97 words
An image input apparatus comprising: a two dimensional area sensor having a plurality of pixels each comprising a thin film transistor for converting an incident quantity of X-rays into an electric signal and for outputting the electric signal; temperature detecting means arranged for obtaining information regarding temperature of at least one of said plurality of pixels; and control means for determining a pulse length of a drive pulse to be applied to a control electrode of the thin film transistor, wherein the drive pulse length is based on the temperature information obtained from said temperature detecting means.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2004-08-06 | 2005-02-05 | 2005-08-07 | $2000.00 | Window Closed / Lapsed |
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