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US6268640B1
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Forming steep lateral doping distribution at source/drain junctions
Assignee: International Business Machines Corp
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Filing: 1999-08-12
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Granted: 2001-07-31
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Expires: 2019-08-12
Abstract
Abstract A semiconductor device is fabricated by implanting into a semiconductor substrate non-doping ions at a tilt angle of at least about 10° to laterally extend preamorphization of the substrate portion and then implanting into the substrate dopants for providing source/drain extensions or halo doping or both.
Inventors
- 👤 Heemyong Park
- 👤 Yuan Taur
- 👤 Hsing-Jen C. Wann
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 13:56
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10D30/60; H10D30/601; H10D30/605; H10P30/208; H10P30/22; H10P30/221; H10P30/222; H10D62/00; H10D62/10; H10D62/17; H10D62/351; H10D62/357; H10D62/364; H10D62/371
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
104 words
A method for fabricating a semiconductor device which comprises providing a structure having a semiconductor substrate, gate insulating layer above selected portions of the semiconductor substrate, gate conductor located above the gate insulating layer; implanting into the substrate non-doping ions at a tilt angle α of at least about 10° and at least at a dosage of at least about 1E14 cm −2 , at an energy of about 10 keV, and wherein edges of the gate conductor act as a self-aligned mask for implanting the non-doping ions; and then implanting into the substrate dopants for providing source/drain extensions or halo doping or both.
Claim 2
Independent Claim
104 words
A method for fabricating a semiconductor device which comprises providing a structure having a semiconductor substrate, gate insulating layer above selected portions of the semiconductor substrate, gate conductor located above the gate insulating layer; implanting into the substrate non-doping ions at a tilt angle α of at least about 10° and at least at a dosage of at least about 1E14 cm −2 , at an energy of about 10 keV, and wherein edges of the gate conductor act as a self-aligned mask for implanting the non-doping ions; and then implanting into the substrate dopants for providing source/drain extensions or halo doping or both.
Claim 3
Dependent Claim
21 words
The method of claim 1 wherein the non-doping ions are selected from the group consisting of germanium, silicon and mixtures thereof.
Claim 4
Dependent Claim
16 words
The method of claim 1 wherein the tilt angle α is about 10° to about 40°.
Claim 5
Dependent Claim
32 words
The method of claim 1 wherein the dopants are implanted at a dosage of greater than 2E14 cm −2 and at an energy of less than 15 keV for providing source/drain extensions.
Claim 6
Dependent Claim
22 words
The method of claim 4 wherein dopants are implanted at a dosage of less than 2E15 cm −2 to provide halo doping.
Claim 7
Dependent Claim
22 words
The method of claim 1 wherein dopants are implanted at a dosage of less than 2E15 cm −2 to provide halo doping.
Claim 8
Dependent Claim
38 words
The method of claim 1 which further includes rapid thermal processing by subjecting the structure to a temperature of about 900 to about 1050° C. for 5 seconds or less after implanting the non-doping ions and the dopants.
Claim 9
Dependent Claim
22 words
The method of claim 1 which further comprises forming sidewall spacers on the gate conductor after implanting the non-doping ions and dopants.
Claim 10
Dependent Claim
28 words
The method of claim 8 which further comprises implanting dopants at a dosage of greater than 3E15 cm −2 for providing deep source/drain after forming the sidewall spacers.
Claim 11
Dependent Claim
23 words
The method of claim 1 which further comprises implanting dopants at a dosage of greater than 3E15 cm −2 for providing deep source/drain.
Claim 12
Dependent Claim
36 words
The method of claim 10 which further comprises a rapid temperature anneal employing a temperature of about 900 to about 1050° C. for less than 5 seconds after implanting the dopants for the deep source/drain regions.
Claim 13
Dependent Claim
34 words
The method of claim 1 which comprises implanting the non-doping ions at a dosage of about 1E14 cm −2 to about 1E15 cm −2 and an energy of about 10 to about 40 Kev.
Claim 14
Dependent Claim
12 words
The method of claim 1 which further comprises rotating the semiconductor device.
Claim 15
Dependent Claim
43 words
The method of claim 13 which further comprises rotating the device 90° after implanting one quarter of the total dosage of the non-doping ions, and repeating the 90° rotation and ¼ dosage implanting two more times for a total of rotating three times.
Claim 16
Dependent Claim
10 words
Semiconductor device obtained by the process of claim 1 .
Claim 17
Dependent Claim
85 words
A semiconductor device which comprises a structure having a semiconductor substrate, gate insulating layer located above selected portions of the semiconductor substrate, gate conductor located above the gate insulating layer, wherein the substrate includes non-doping ions having been implanted at a tilt angle α of at least about 10° and at a dosage of at least about 1E14 cm −2 at an energy of at least about 10 keV and wherein the substrate further includes dopants for providing source/drain extensions or halo doping or both.
Claim 18
Dependent Claim
85 words
A semiconductor device which comprises a structure having a semiconductor substrate, gate insulating layer located above selected portions of the semiconductor substrate, gate conductor located above the gate insulating layer, wherein the substrate includes non-doping ions having been implanted at a tilt angle α of at least about 10° and at a dosage of at least about 1E14 cm −2 at an energy of at least about 10 keV and wherein the substrate further includes dopants for providing source/drain extensions or halo doping or both.
Claim 19
Dependent Claim
22 words
The semiconductor device of claim 16 wherein the non-doping ions are selected from the group consisting of germanium, silicon and mixtures thereof.
Claim 20
Dependent Claim
24 words
The semiconductor device of claim 16 wherein the dopants for providing source/drain extensions are at a dosage of at least 2E14 cm −2 .
Claim 21
Dependent Claim
23 words
The semiconductor of claim 18 wherein the dopants for the halo doping are at a dosage of less than 2E15 cm −2 .
Claim 22
Dependent Claim
23 words
The semiconductor of claim 16 wherein the dopants for the halo doping are at a dosage of less than 2E15 cm −2 .
Claim 23
Dependent Claim
15 words
The semiconductor device of claim 16 which further includes sidewall spacers on the gate conductor.
Claim 24
Dependent Claim
17 words
The semiconductor device of claim 21 wherein the sidewall spacers comprise silicon dioxide, silicon nitride or both.
Claim 25
Dependent Claim
13 words
The semiconductor device of claim 16 which further includes deep source/drain implant regions.
Claim 26
Dependent Claim
23 words
The semiconductor device of claim 23 wherein the deep source/drain regions contain dopants at a dosage of about 3E15 cm −2 and above.
Claim 27
Dependent Claim
29 words
The semiconductor device of claim 16 wherein the dosage is about 1E14 cm −2 to about 1E15 cm −2 and the energy is about 10 to about 40 keV.
Claim 28
Independent Claim
106 words
A method for fabricating a semiconductor device which consists essentially of providing a structure having a semiconductor substrate, gate insulating layer above selected portions of the semiconductor substrate, gate conductor located above the gate insulating layer; implanting into the substrate non-doping ions at a tilt angle α of at least about 10° and at a dosage of at least about 1E14 cm −2 , at an energy of at least about 10 keV, and wherein edges of the gate conductor act as a self-aligned mask for implanting the non-doping ions; and then implanting into the substrate dopants for providing source/drain extensions or halo doping or both.
Claim 29
Independent Claim
106 words
A method for fabricating a semiconductor device which consists essentially of providing a structure having a semiconductor substrate, gate insulating layer above selected portions of the semiconductor substrate, gate conductor located above the gate insulating layer; implanting into the substrate non-doping ions at a tilt angle α of at least about 10° and at a dosage of at least about 1E14 cm −2 , at an energy of at least about 10 keV, and wherein edges of the gate conductor act as a self-aligned mask for implanting the non-doping ions; and then implanting into the substrate dopants for providing source/drain extensions or halo doping or both.
Claim 30
Dependent Claim
22 words
The method of claim 26 which further comprises forming sidewall spacers on the gate conductor after implanting the non-doping ions and dopants.
Claim 31
Dependent Claim
28 words
The method of claim 27 which further comprises implanting dopants at a dosage of greater than 3E15 cm −2 for providing deep source/drain after forming the sidewall spacers.
Claim 32
Dependent Claim
36 words
The method of claim 28 which further comprises a rapid temperature anneal employing a temperature of about 900 to about 1050° C. for less than 5 seconds after implanting the dopants for the deep source/drain regions.
References Cited (Backward Citations)
US5223445A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-07-30 | 2005-01-29 | 2005-07-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-07-30 | 2009-01-29 | 2009-07-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-07-30 | 2013-01-29 | 2013-07-31 | $7700.00 | Window Closed / Lapsed |