Patent US2469053A successfully refreshed from Google Patents.
Patent US6263292B1 successfully refreshed from Google Patents.
US6263292B1
Expired / Lapsed
US
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High accuracy particle dimension measurement system
Assignee: KLA Tencor Technologies Corp
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Filing: 1998-02-23
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Granted: 2001-07-17
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Expires: 2018-02-23
Abstract
Abstract A measurement tool connects to a microscope which may be an automatic inspection machine for identifying and measuring microscopic dimensions of features on a photographic mask such as opacity, area, diameter, width, height, line widths and corner radius. Dimensions of features having sizes of less than about twice the wavelength being used (less than 1 micron for visible light) are measured quickly and accurately in a production environment. The opacity of a feature is determined and used for correcting area or height measurements as well as helping to determine what the feature is made of. A contrast vs. diameter curve for known opaque features is used to determine opacity of unknown features. The curvature of the intensity profile of the feature is used in conjunction with a curvature-width lookup table in order to produce the width of the feature. Curvature-width lookup data is developed from the area and diameter of known round defects along with the curvature of the profile of the round defects. A width-height multiplier is used to correct the measured height due to the blurring associated with sizes of features close to the wavelength being used. An opacity correction is also used to correct the height of features that are less than 100% opaque. Width-height multiplier data is developed by measuring the area and diameter of known round defects, measuring their height and computing a multiplier. An actual measurement of the height of a feature measures both the height and the width. Width-height multiplier data is referenced using the measured width to produce a height multiplier for that width. The radius of curvature is also determined at submicron sizes using a flux measurement.
Inventors
- 👤 Peter J. Fiekowsky
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 01:27
CPC Classifications
G; G01; G01N; G01N21/00; G01N21/84; G01N21/88; G01N21/95; G01N21/956; G01N21/95607; G03; G03F; G03F1/00; G03F1/68; G03F1/82; G03F1/84; G01N2021/95676
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
75 words
A computer-implemented method of determining the radius of curvature of a microscopic feature located on a medium, said method comprising: determining reference flux for a region surrounding a reference corner of said feature; determining actual flux for a region surrounding an actual corner of said feature; comparing said reference flux and said actual flux to produce a resulting flux value; and using said resulting flux value to determine said radius of curvature of said feature.
Claim 2
Dependent Claim
75 words
A computer-implemented method of determining the radius of curvature of a microscopic feature located on a medium, said method comprising: determining reference flux for a region surrounding a reference corner of said feature; determining actual flux for a region surrounding an actual corner of said feature; comparing said reference flux and said actual flux to produce a resulting flux value; and using said resulting flux value to determine said radius of curvature of said feature.
Claim 3
Dependent Claim
23 words
A method as recited in claim 1 wherein said radius of curvature is less than about twice the wavelength used in said method.
Claim 4
Dependent Claim
32 words
A method as recited in claim 1 wherein said step of determining reference flux includes the sub-step of: determining vertical and horizontal edges of said actual corner to produce said reference corner.
Claim 5
Dependent Claim
82 words
A computer-implemented method of determining the radius of curvature of a microscopic feature located on a medium, said method comprising: developing a vertical reference profile for a corner region surrounding a corner of said feature; developing a horizontal reference profile for said corner region surrounding said corner; combining said vertical reference profile and said horizontal reference profile to produce a corner reference profile; and producing said radius of curvature based upon said corner reference profile and an actual profile of said corner.
Claim 6
Dependent Claim
82 words
A computer-implemented method of determining the radius of curvature of a microscopic feature located on a medium, said method comprising: developing a vertical reference profile for a corner region surrounding a corner of said feature; developing a horizontal reference profile for said corner region surrounding said corner; combining said vertical reference profile and said horizontal reference profile to produce a corner reference profile; and producing said radius of curvature based upon said corner reference profile and an actual profile of said corner.
Claim 7
Dependent Claim
42 words
A method as recited in claim 4 wherein said step of producing includes the substep of: comparing said corner reference profile to an actual profile of said corner; and determining said radius of curvature based upon the result of said comparing step.
Claim 8
Dependent Claim
32 words
A method as recited in claim 4 wherein said step of producing includes the sub-step of: determining reference flux for said corner reference profile; and determining actual flux for said actual profile.
Claim 9
Dependent Claim
23 words
A method as recited in claim 4 wherein said radius of curvature is less than about twice the wavelength used in said method.
Claim 10
Dependent Claim
87 words
A mask used in the manufacture of semiconductor devices, said mask resulting from a method of determining the radius of curvature of a microscopic feature located on said mask, said method comprising: determining reference flux for a region surrounding a reference corner of said feature; determining actual flux for a region surrounding an actual corner of said feature; comparing said reference flux and said actual flux to produce a resulting flux value; and using said resulting flux value to determine said radius of curvature of said feature.
Claim 11
Dependent Claim
87 words
A mask used in the manufacture of semiconductor devices, said mask resulting from a method of determining the radius of curvature of a microscopic feature located on said mask, said method comprising: determining reference flux for a region surrounding a reference corner of said feature; determining actual flux for a region surrounding an actual corner of said feature; comparing said reference flux and said actual flux to produce a resulting flux value; and using said resulting flux value to determine said radius of curvature of said feature.
Claim 12
Dependent Claim
23 words
A mask as recited in claim 8 wherein said radius of curvature is less than about twice the wavelength used in said method.
Claim 13
Dependent Claim
32 words
A mask as recited in claim 8 wherein said step of determining reference flux includes the sub-step of: determining vertical and horizontal edges of said actual corner to produce said reference corner.
Claim 14
Dependent Claim
94 words
A mask used in the manufacture of semiconductor devices, said mask resulting from a method of determining the radius of curvature of a microscopic feature located on said mask, said method comprising: developing a vertical reference profile for a corner region surrounding a corner of said feature; developing a horizontal reference profile for said corner region surrounding said corner; combining said vertical reference profile and said horizontal reference profile to produce a corner reference profile; and producing said radius of curvature based upon said corner reference profile and an actual profile of said corner.
Claim 15
Dependent Claim
94 words
A mask used in the manufacture of semiconductor devices, said mask resulting from a method of determining the radius of curvature of a microscopic feature located on said mask, said method comprising: developing a vertical reference profile for a corner region surrounding a corner of said feature; developing a horizontal reference profile for said corner region surrounding said corner; combining said vertical reference profile and said horizontal reference profile to produce a corner reference profile; and producing said radius of curvature based upon said corner reference profile and an actual profile of said corner.
Claim 16
Dependent Claim
42 words
A mask as recited in claim 11 wherein said step of producing includes the sub-step of: comparing said corner reference profile to an actual profile of said corner; and determining said radius of curvature based upon the result of said comparing step.
Claim 17
Dependent Claim
32 words
A mask as recited in claim 11 wherein said step of producing includes the sub-step of: determining reference flux for said corner reference profile; and determining actual flux for said actual profile.
Claim 18
Dependent Claim
23 words
A mask as recited in claim 11 wherein said radius of curvature is less than about twice the wavelength used in said method.
Claim 19
Dependent Claim
82 words
A semiconductor device, said semiconductor device resulting from a method of determining the radius of curvature of a microscopic feature located on a mask, said method comprising: determining reference flux for a region surrounding a reference corner of said feature; determining actual flux for a region surrounding an actual corner of said feature; comparing said reference flux and said actual flux to produce a resulting flux value; and using said resulting flux value to determine said radius of curvature of said feature.
Claim 20
Dependent Claim
82 words
A semiconductor device, said semiconductor device resulting from a method of determining the radius of curvature of a microscopic feature located on a mask, said method comprising: determining reference flux for a region surrounding a reference corner of said feature; determining actual flux for a region surrounding an actual corner of said feature; comparing said reference flux and said actual flux to produce a resulting flux value; and using said resulting flux value to determine said radius of curvature of said feature.
Claim 21
Dependent Claim
24 words
A semiconductor device as recited in claim 15 wherein said radius of curvature is less than about twice the wavelength used in said method.
Claim 22
Dependent Claim
33 words
A semiconductor device as recited in claim 15 wherein said step of determining reference flux includes the sub-step of: determining vertical and horizontal edges of said actual corner to produce said reference corner.
Claim 23
Dependent Claim
89 words
A semiconductor device, said semiconductor device resulting from a method of determining the radius of curvature of a microscopic feature located on a mask, said method comprising: developing a vertical reference profile for a corner region surrounding a corner of said feature; developing a horizontal reference profile for said corner region surrounding said corner; combining said vertical reference profile and said horizontal reference profile to produce a corner reference profile; and producing said radius of curvature based upon said corner reference profile and an actual profile of said corner.
Claim 24
Dependent Claim
89 words
A semiconductor device, said semiconductor device resulting from a method of determining the radius of curvature of a microscopic feature located on a mask, said method comprising: developing a vertical reference profile for a corner region surrounding a corner of said feature; developing a horizontal reference profile for said corner region surrounding said corner; combining said vertical reference profile and said horizontal reference profile to produce a corner reference profile; and producing said radius of curvature based upon said corner reference profile and an actual profile of said corner.
Claim 25
Dependent Claim
43 words
A semiconductor device as recited in claim 18 wherein said step of producing includes the sub-step of: comparing said corner reference profile to an actual profile of said corner; and determining said radius of curvature based upon the result of said comparing step.
Claim 26
Dependent Claim
33 words
A semiconductor device as recited in claim 18 wherein said step of producing includes the sub-step of: determining reference flux for said corner reference profile; and determining actual flux for said actual profile.
Claim 27
Dependent Claim
24 words
A semiconductor device as recited in claim 18 wherein said radius of curvature is less than about twice the wavelength used in said method.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-07-16 | 2005-01-15 | 2005-07-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-07-16 | 2009-01-15 | 2009-07-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-07-16 | 2013-01-15 | 2013-07-17 | $7700.00 | Window Closed / Lapsed |