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US6245667B1
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Method of forming via
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 1999-12-17
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Granted: 2001-06-12
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Expires: 2019-12-17
Abstract
Abstract A method of forming a via. A stacked structure has a barrier layer and a metal line is formed over a substrate. Spacers capable of serving as a barrier are formed over tapering sidewalls of the stacked structure before vias and plugs are formed.
Inventors
- 👤 Ling-Sung Wang
- 👤 Chingfu Lin
- 👤 Chien-Jung Wang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 03:49
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/069
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
78 words
A method of forming a via, comprising the steps of: forming a stacked structure over a substrate, wherein the stacked structure comprises a first barrier layer over a metal line; forming a second barrier layer over the stacked structure and the substrate; etching back the second barrier layer to form spacers on sidewalls of the stacked structure; forming a dielectric layer over the stacked structure, the spacers and the substrate; and forming a via in the dielectric layer.
Claim 2
Independent Claim
78 words
A method of forming a via, comprising the steps of: forming a stacked structure over a substrate, wherein the stacked structure comprises a first barrier layer over a metal line; forming a second barrier layer over the stacked structure and the substrate; etching back the second barrier layer to form spacers on sidewalls of the stacked structure; forming a dielectric layer over the stacked structure, the spacers and the substrate; and forming a via in the dielectric layer.
Claim 3
Dependent Claim
18 words
The method of claim 1 , wherein a material for forming the metal line includes an aluminum-copper alloy.
Claim 4
Dependent Claim
15 words
The method of claim 1 , wherein first barrier layer includes a titanium nitride layer.
Claim 5
Dependent Claim
16 words
The method of claim 1 , wherein the second barrier layer includes a titanium itride layer.
Claim 6
Dependent Claim
17 words
The method of claim 1 , wherein the step of forming the second barrier layer includes sputtering.
Claim 7
Dependent Claim
16 words
The method of claim 1 , wherein the via is formed according to borderless design specifications.
Claim 8
Independent Claim
120 words
A method of forming a via, comprising the steps of: providing a substrate; forming a stacked structure over the substrate, wherein the stacked structure includes a first barrier layer over a metal line formed using an aluminum-copper alloy, and the stacked structure has sloped sidewalls; forming a second barrier layer over the stacked structure and the substrate by sputtering; etching back the second barrier layer to form spacers on the sidewalls of the stacked structure; forming a dielectric layer over the stacked structure, the spacers and the substrate; and forming a via in the dielectric layer according to borderless design specification such that the via exposes a portion of the first barrier layer and a portion of the sidewall spacer.
Claim 9
Independent Claim
120 words
A method of forming a via, comprising the steps of: providing a substrate; forming a stacked structure over the substrate, wherein the stacked structure includes a first barrier layer over a metal line formed using an aluminum-copper alloy, and the stacked structure has sloped sidewalls; forming a second barrier layer over the stacked structure and the substrate by sputtering; etching back the second barrier layer to form spacers on the sidewalls of the stacked structure; forming a dielectric layer over the stacked structure, the spacers and the substrate; and forming a via in the dielectric layer according to borderless design specification such that the via exposes a portion of the first barrier layer and a portion of the sidewall spacer.
Claim 10
Dependent Claim
16 words
The method of claim 7 , wherein the first barrier layer includes a titanium nitride layer.
Claim 11
Dependent Claim
16 words
The method of claim 7 , wherein the second barrier layer includes a titanium nitride layer.
References Cited (Backward Citations)
US6054380A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-06-11 | 2004-12-11 | 2005-06-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-06-11 | 2008-12-11 | 2009-06-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-06-11 | 2012-12-11 | 2013-06-12 | $7700.00 | Window Closed / Lapsed |