US6239040B1
Expired / Lapsed
US
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Method of coating amorphous silicon film
Assignee: United Microelectronics Corp
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Filing: 1998-10-30
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Granted: 2001-05-29
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Expires: 2018-10-30
Abstract
Abstract A method of coating an amorphous silicon layer. An amorphous silicon layer is directly deposited on the polysilicon nodes by a self-aligned method. A chemical mechanical polishing process is performed to control the thickness of the amorphous silicon layer. No additional photoresist is used during the whole processes. Therefore, the duration for deposition can be reduced and the quality of the amorphous silicon film is improved.
Inventors
- 👤 Shih-Ching Chen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 21:05
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/712; H10P; H10P52/00; H10P52/40; H10P52/403
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
165 words
A method of coating an amorphous silicon film formed on polysilicon blocks, comprising: providing a substrate; forming an insulating layer over the substrate; forming a plurality of polysilicon blocks through the insulating layer to make contact with the substrate; forming a silicon nitride layer over the insulating layer to conformally cover the polysilicon blocks; forming a silicon dioxide layer on the silicon nitride layer to fill vacant spaces between the polysilicon blocks; polishing the silicon dioxide layer until the silicon nitride layer is exposed to remove the silicon dioxide layer above the silicon nitride layer; removing a portion of the silicon nitride layer with the silicon dioxide layer as a mask to expose the polysilicon blocks; forming an amorphous silicon layer over the silicon dioxide layer and the polysilicon blocks; polishing the amorphous silicon layer until the silicon dioxide layer is exposed to leave a remaining amorphous silicon layer covering the polysilicon blocks; and removing the silicon dioxide layer and a underlying silicon nitride layer.
Claim 2
Independent Claim
165 words
A method of coating an amorphous silicon film formed on polysilicon blocks, comprising: providing a substrate; forming an insulating layer over the substrate; forming a plurality of polysilicon blocks through the insulating layer to make contact with the substrate; forming a silicon nitride layer over the insulating layer to conformally cover the polysilicon blocks; forming a silicon dioxide layer on the silicon nitride layer to fill vacant spaces between the polysilicon blocks; polishing the silicon dioxide layer until the silicon nitride layer is exposed to remove the silicon dioxide layer above the silicon nitride layer; removing a portion of the silicon nitride layer with the silicon dioxide layer as a mask to expose the polysilicon blocks; forming an amorphous silicon layer over the silicon dioxide layer and the polysilicon blocks; polishing the amorphous silicon layer until the silicon dioxide layer is exposed to leave a remaining amorphous silicon layer covering the polysilicon blocks; and removing the silicon dioxide layer and a underlying silicon nitride layer.
Claim 3
Dependent Claim
20 words
A method according to claim 1 , wherein the step of forming the polysilicon layer is by chemical vapor deposition.
Claim 4
Dependent Claim
21 words
A method according to claim 1 , wherein the step of forming the silicon nitride layer is by chemical vapor deposition.
Claim 5
Dependent Claim
21 words
A method according to claim 1 , wherein the step of forming the silicon dioxide layer is by chemical vapor deposition.
Claim 6
Dependent Claim
19 words
A method according to claim 1 , wherein the step of polishing is by a chemical mechanical polishing process.
Claim 7
Dependent Claim
30 words
A method according to claim 1 , wherein the step of removing the silicon nitride layer with the silicon dioxide layer as a mask is by a dry etching process.
Claim 8
Dependent Claim
21 words
A method according to claim 1 , wherein the step of forming the amorphous silicon layer is by chemical vapor deposition.
Claim 9
Dependent Claim
22 words
A method according to claim 1 , wherein the step of polishing the amorphous silicon layer is by a dry etching process.
Claim 10
Dependent Claim
23 words
A method according to claim 1 , wherein the step of removing the underlying silicon nitride layer is by a dry etching process.
Claim 11
Dependent Claim
18 words
A method according to claim 1 , further comprising forming hemispherical grains on the remaining amorphous silicon layer.
Claim 12
Independent Claim
187 words
A method of manufacturing a capacitor on a substrate, comprising: forming an insulating layer over a substrate; forming a plurality of polysilicon blocks through the insulating layer to make contact with the substrate; forming a silicon nitride layer to conformally cover the polysilicon blocks; forming a silicon dioxide layer on the silicon nitride layer to fill vacant spaces between the polysilicon blocks; removing a portion of the silicon dioxide layer above the silicon nitride layer to expose the silicon nitride layer; removing the silicon nitride layer exposed by the silicon dioxide layer; forming an amorphous silicon layer over the silicon dioxide layer and the polysilicon blocks; removing a portion of the amorphous silicon layer until the silicon dioxide layer is exposed to leave a remaining amorphous silicon layer remains covering the polysilicon blocks; removing the silicon dioxide layer and a remaining silicon nitride layer; forming a hemispherical grained layer on the amorphous silicon layer, thereby a bottom-electrode is formed from the hemispherical grained layer, the polysilicon blocks and the amorphous silicon layer; forming a dielectric layer on the bottom-electrode; and forming a top-electrode on the dielectric layer.
Claim 13
Independent Claim
187 words
A method of manufacturing a capacitor on a substrate, comprising: forming an insulating layer over a substrate; forming a plurality of polysilicon blocks through the insulating layer to make contact with the substrate; forming a silicon nitride layer to conformally cover the polysilicon blocks; forming a silicon dioxide layer on the silicon nitride layer to fill vacant spaces between the polysilicon blocks; removing a portion of the silicon dioxide layer above the silicon nitride layer to expose the silicon nitride layer; removing the silicon nitride layer exposed by the silicon dioxide layer; forming an amorphous silicon layer over the silicon dioxide layer and the polysilicon blocks; removing a portion of the amorphous silicon layer until the silicon dioxide layer is exposed to leave a remaining amorphous silicon layer remains covering the polysilicon blocks; removing the silicon dioxide layer and a remaining silicon nitride layer; forming a hemispherical grained layer on the amorphous silicon layer, thereby a bottom-electrode is formed from the hemispherical grained layer, the polysilicon blocks and the amorphous silicon layer; forming a dielectric layer on the bottom-electrode; and forming a top-electrode on the dielectric layer.
Claim 14
Dependent Claim
20 words
A method according to claim 11 , wherein the step of forming the polysilicon layer is by chemical vapor deposition.
Claim 15
Dependent Claim
21 words
A method according to claim 11 , wherein the step of forming the silicon nitride layer is by chemical vapor deposition.
Claim 16
Dependent Claim
21 words
A method according to claim 11 , wherein the step of forming the silicon dioxide layer is by chemical vapor deposition.
Claim 17
Dependent Claim
26 words
A method according to claim 11 , wherein the step of removing a portion of the silicon dioxide layer is by a chemical mechanical polishing process.
Claim 18
Dependent Claim
30 words
A method according to claim 11 , wherein the step of removing the silicon nitride layer with the silicon dioxide layer as a mask is by a dry etching process.
Claim 19
Dependent Claim
21 words
A method according to claim 11 , wherein the step of forming the amorphous silicon layer is by chemical vapor deposition.
Claim 20
Dependent Claim
23 words
A method according to claim 11 , wherein the step of removing the amorphous silicon layer is by a chemical mechanical polishing process.
Claim 21
Dependent Claim
22 words
A method according to claim 11 , wherein the step of removing the silicon dioxide layer is by a dry etching process.
Claim 22
Dependent Claim
23 words
A method according to claim 11 , wherein the step of removing the underlying silicon nitride layer is by a dry etching process.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-05-28 | 2004-11-27 | 2005-05-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-05-28 | 2008-11-27 | 2009-05-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-05-28 | 2012-11-27 | 2013-05-29 | $7700.00 | Window Closed / Lapsed |