US6239007B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming T-shaped gate
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 2000-02-24
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Granted: 2001-05-29
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Expires: 2020-02-24
Abstract
Abstract A method of forming a T-shaped gate. Two insulation layers, each having a different etching rate, are sequentially formed over a conventional gate structure. A planarization of the insulation layer is next carried out. Utilizing the difference in etching rate between the two insulation layers, the insulation layer above the gate structure is removed to expose the gate structure. A conductive layer is then formed over the exposed gate structure. Another planarization is carried out so that only the portion of conductive layer above the gate structure is retained. While using the conductive layer above the gate structure as an etching mask, the two insulation layers are removed. A silicide process is carried out to form a silicide layer over the conductive layer.
Inventors
- 👤 Chi-Hsi Wu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 07:59
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01324
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
134 words
A method of forming a T-shaped gate, comprising the steps of: providing a semiconductor substrate; forming a gate structure over the semiconductor substrate; forming a first insulation layer over the gate structure and the semiconductor substrate; forming a second insulation layer over the first insulation layer; planarizing the second insulation layer so that the first insulation layer above the gate structure is exposed; removing the first insulation layer above the gate structure so that the gate structure is exposed; forming a conductive layer over the gate structure and the second insulation layer; removing the conductive layer above the second insulation layer while retaining the conductive layer above the gate structure; and removing the first insulation layer and the second insulation layer while using the conductive layer above the gate structure as an etching mask.
Claim 2
Independent Claim
134 words
A method of forming a T-shaped gate, comprising the steps of: providing a semiconductor substrate; forming a gate structure over the semiconductor substrate; forming a first insulation layer over the gate structure and the semiconductor substrate; forming a second insulation layer over the first insulation layer; planarizing the second insulation layer so that the first insulation layer above the gate structure is exposed; removing the first insulation layer above the gate structure so that the gate structure is exposed; forming a conductive layer over the gate structure and the second insulation layer; removing the conductive layer above the second insulation layer while retaining the conductive layer above the gate structure; and removing the first insulation layer and the second insulation layer while using the conductive layer above the gate structure as an etching mask.
Claim 3
Dependent Claim
22 words
The method of claim 1 , wherein the gate structure includes a stack containing a polysilicon layer over a gate oxide layer.
Claim 4
Dependent Claim
19 words
The method of claim 1 , wherein the step of forming the first insulation layer includes depositing silicon oxide.
Claim 5
Dependent Claim
22 words
The method of claim 1 , wherein the second insulation layer and the first insulation layer have a fixed etching selectivity ratio.
Claim 6
Dependent Claim
18 words
The method of claim 1 , wherein step of forming the second insulation layer includes depositing silicon nitride.
Claim 7
Dependent Claim
18 words
The method of claim 1 , wherein the step of planarizing the second insulation layer includes chemical-mechanical polishing.
Claim 8
Dependent Claim
17 words
The method of claim 1 , wherein the step of forming the conductive layer includes depositing polysilicon.
Claim 9
Dependent Claim
43 words
The method of claim 7 , wherein after the step of removing the first and the second insulation layer, further includes carrying out a metal silicide process so that a metal silicide layer is formed over the conductive layer and the semiconductor substrate.
Claim 10
Independent Claim
187 words
A method of forming a T-shaped gate, comprising the steps of: providing a semiconductor substrate; forming a gate structure over the semiconductor substrate, wherein the gate structure is a stack that includes a polysilicon layer over a gate oxide layer; forming a first insulation layer over the gate structure and the semiconductor substrate; forming a second insulation layer over the first insulation layer; planarizing the second insulation layer so that the first insulation layer above the gate structure is exposed; removing the first insulation layer above the gate structure so that the gate structure is exposed; forming a polysilicon layer over the gate structure and the second insulation layer; removing the polysilicon layer above the second insulation layer while retaining the polysilicon layer above the gate structure; removing the first insulation layer and the second insulation layer while using the polysilicon layer above the gate structure as an etching mask; performing an ion implantation to form a source terminal and a drain terminal in the semiconductor substrate; and conducting a metal silicide process to form a metal silicide layer over the exposed polysilicon layer and semiconductor substrate.
Claim 11
Independent Claim
187 words
A method of forming a T-shaped gate, comprising the steps of: providing a semiconductor substrate; forming a gate structure over the semiconductor substrate, wherein the gate structure is a stack that includes a polysilicon layer over a gate oxide layer; forming a first insulation layer over the gate structure and the semiconductor substrate; forming a second insulation layer over the first insulation layer; planarizing the second insulation layer so that the first insulation layer above the gate structure is exposed; removing the first insulation layer above the gate structure so that the gate structure is exposed; forming a polysilicon layer over the gate structure and the second insulation layer; removing the polysilicon layer above the second insulation layer while retaining the polysilicon layer above the gate structure; removing the first insulation layer and the second insulation layer while using the polysilicon layer above the gate structure as an etching mask; performing an ion implantation to form a source terminal and a drain terminal in the semiconductor substrate; and conducting a metal silicide process to form a metal silicide layer over the exposed polysilicon layer and semiconductor substrate.
Claim 12
Dependent Claim
19 words
The method of claim 9 , wherein the step of forming the first insulation layer includes depositing silicon oxide.
Claim 13
Dependent Claim
22 words
The method of claim 9 , wherein the second insulation layer and the first insulation layer has a fixed etching selectivity ratio.
Claim 14
Dependent Claim
18 words
The method of claim 9 , wherein step of forming the second insulation layer includes depositing silicon nitride.
Claim 15
Dependent Claim
18 words
The method of claim 9 , wherein the step of planarizing the second insulation layer includes chemical-mechanical polishing.
Claim 16
Independent Claim
176 words
A method of forming a T-shaped gate, the method comprising the steps of: providing a semiconductor substrate; forming a gate structure over the semiconductor substrate; forming a first insulation layer on the gate structure and the semiconductor substrate; forming a second insulation layer on the first insulation layer; planarizing the second insulation layer so that the first insulation layer above the gate structure is exposed; removing a portion of the first insulation layer above the gate structure until a top surface of the gate structure is exposed; forming a conductive layer on the gate structure, the first insulation layer and the second insulation layer; planarizing the conductive layer using the second insulation layer as a stop layer, so that a portion of the conductive layer is retained above the gate structure; removing the first insulation layer and the second insulation layer while using the conductive layer above the gate structure as an etching mask; and conducting a metal silicide process so that a metal silicide layer is formed on the conductive layer and the semiconductor substrate.
Claim 17
Independent Claim
176 words
A method of forming a T-shaped gate, the method comprising the steps of: providing a semiconductor substrate; forming a gate structure over the semiconductor substrate; forming a first insulation layer on the gate structure and the semiconductor substrate; forming a second insulation layer on the first insulation layer; planarizing the second insulation layer so that the first insulation layer above the gate structure is exposed; removing a portion of the first insulation layer above the gate structure until a top surface of the gate structure is exposed; forming a conductive layer on the gate structure, the first insulation layer and the second insulation layer; planarizing the conductive layer using the second insulation layer as a stop layer, so that a portion of the conductive layer is retained above the gate structure; removing the first insulation layer and the second insulation layer while using the conductive layer above the gate structure as an etching mask; and conducting a metal silicide process so that a metal silicide layer is formed on the conductive layer and the semiconductor substrate.
Claim 18
Dependent Claim
22 words
The method of claim 14 , wherein the gate structure includes a stack containing a polysilicon layer over a gate oxide layer.
Claim 19
Dependent Claim
19 words
The method of claim 14 , wherein the step of forming the first insulation layer includes depositing silicon oxide.
Claim 20
Dependent Claim
22 words
The method of claim 14 , wherein the second insulation layer and the first insulation layer have a fixed etching selectivity ratio.
Claim 21
Dependent Claim
18 words
The method of claim 14 , wherein step of forming the second insulation layer includes depositing silicon nitride.
Claim 22
Dependent Claim
18 words
The method of claim 14 , wherein the step of planarizing the second insulation layer includes chemical-mechanical polishing.
Claim 23
Dependent Claim
17 words
The method of claim 14 , wherein the step of forming the conductive layer includes depositing polysilicon.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-05-28 | 2004-11-27 | 2005-05-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-05-28 | 2008-11-27 | 2009-05-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-05-28 | 2012-11-27 | 2013-05-29 | $7700.00 | Window Closed / Lapsed |