US6235624B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Paste connection plug, burying method, and semiconductor device manufacturing method
Assignee: Toshiba Corp
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Filing: 1999-05-28
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Granted: 2001-05-22
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Expires: 2019-05-28
Abstract
Abstract Form a trench in a major surface of a semiconductor substrate, then bury a paste in the trench. The paste contains solids having a conductive substance and a resin, and solvent for dissolving the resin. The solids content of the paste is not less than 60 vol % and a viscosity ratio thereof is not more than 2.
Inventors
- 👤 Keiichi Sasaki
- 👤 Manabu Kimura
- 👤 Nobuo Hayasaka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 10:34
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/021; H10W20/023; H10P; H10P14/00; H10P14/40; H10P14/46; H10W20/0245; H10W20/0261; H10W20/031; H10W20/056; H10W20/059; H10W20/20; Y; Y10; Y10S; Y10S438/00; Y10S438/977
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
52 words
A method of manufacturing a semiconductor substrate, comprising the steps of: forming a trench in a major surface of a substrate; forming a calcination type paste inside and outside the trench, and burying said paste in the trench; temporarily hardening said paste; removing said paste outside the trench; and calcining said paste.
Claim 2
Independent Claim
52 words
A method of manufacturing a semiconductor substrate, comprising the steps of: forming a trench in a major surface of a substrate; forming a calcination type paste inside and outside the trench, and burying said paste in the trench; temporarily hardening said paste; removing said paste outside the trench; and calcining said paste.
Claim 3
Dependent Claim
21 words
A method according to claim 1 , wherein said paste outside the trench is remove by one of polishing and etching.
Claim 4
Dependent Claim
43 words
A method according to claim 1 , wherein a connection plug made of said paste extending through the substrate is formed by removing an opposite surface of the substrate to the major until said paste appears after the step of calcining said paste.
Claim 5
Dependent Claim
22 words
A method according to claim 1 , wherein an interconnection is formed on said paste after the step of calcining said paste.
Claim 6
Dependent Claim
16 words
A method according to claim 1 , wherein a conductive paste is used as said paste.
Claim 7
Dependent Claim
19 words
A method according to claim 1 , wherein said paste outside the trench is removed by chemical mechanical polishing.
Claim 8
Dependent Claim
49 words
A method according to claim 1 , wherein a connection plug made of said paste extending through the substrate is formed by removing an opposite surface of the substrate to the major by one of polishing and etching until said paste appears after the step of calcining said paste.
Claim 9
Dependent Claim
47 words
A method according to claim 1 , wherein a connection plug made of said paste extending through the substrate is formed by removing an opposite surface of the substrate to the major by chemical mechanical polishing until said paste appears after the step of calcining said paste.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-05-21 | 2004-11-20 | 2005-05-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-05-21 | 2008-11-20 | 2009-05-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-05-21 | 2012-11-20 | 2013-05-22 | $7700.00 | Window Closed / Lapsed |