US6227947B1
Expired / Lapsed
US
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Apparatus and method for chemical mechanical polishing metal on a semiconductor wafer
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 1999-08-03
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Granted: 2001-05-08
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Expires: 2019-08-03
Abstract
Abstract An apparatus and a method for chemical mechanical polishing a metal on a semiconductor wafer capable of achieving improved pad life are disclosed. In the apparatus, in addition to a first spray nozzle used for spraying a slurry solution onto the top of a polishing pad, a second spray nozzle is provided for mounting juxtaposed to a conditioning pad for dispensing a cleaning solution capable of dissolving polishing debris formed on the polishing pad surface. The apparatus may further include at least one cleaning solution reservoir for storing and delivering a cleaning solution to the second spray nozzle. The method can be advantageously carried out in two-steps during which a first cleaning solution is sprayed onto the pad surface for dissolving the polishing debris, and then a second cleaning solution is sprayed onto the pad surface for removing or flushing away the dissolved debris. In one illustration for the removal of oxides of copper, an acid-containing or ammonium hydroxide-containing cleaning solution is used advantageously to dissolve the oxides, and then deionized water is used to remove the dissolved debris from the pad surface.
Inventors
- 👤 Tien-Chen Hu
- 👤 Jih-Churng Twu
- 👤 Ying-Ho Chen
- 👤 Tsu Shih
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 19:59
CPC Classifications
B; B24; B24B; B24B53/00; B24B53/017; B24B53/013
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
122 words
An apparatus for chemical mechanical polishing a semiconductor wafer with extended polishing pad life comprising: a rotatable platen having a polishing pad mounted on top, a first spray nozzle situated over said polishing pad for dispensing a slurry solution onto a top surface of said polishing pad, a wafer holder for holding a wafer therein and for pressing an active surface of said wafer against said top surface of said polishing pad, a conditioner arm for holding a conditioning pad therein for removing a polishing debris from said top surface of said polishing pad, a solution for substantially dissolving said polishing debris, and a second spray nozzle mounted juxtaposed to said conditioning pad for dispensing said solution during a pad conditioning process.
Claim 2
Independent Claim
122 words
An apparatus for chemical mechanical polishing a semiconductor wafer with extended polishing pad life comprising: a rotatable platen having a polishing pad mounted on top, a first spray nozzle situated over said polishing pad for dispensing a slurry solution onto a top surface of said polishing pad, a wafer holder for holding a wafer therein and for pressing an active surface of said wafer against said top surface of said polishing pad, a conditioner arm for holding a conditioning pad therein for removing a polishing debris from said top surface of said polishing pad, a solution for substantially dissolving said polishing debris, and a second spray nozzle mounted juxtaposed to said conditioning pad for dispensing said solution during a pad conditioning process.
Claim 3
Dependent Claim
34 words
An apparatus for chemical mechanical polishing a semiconductor wafer with extended pad life according to claim 1 , wherein said second spray nozzle is mounted on said conditioner arm adjacent to said conditioner pad.
Claim 4
Dependent Claim
34 words
An apparatus for chemical mechanical polishing a semiconductor wafer with extended pad life according to claim 1 further comprising at least one solution reservoir for supplying a cleaning solution to said second spray nozzle.
Claim 5
Dependent Claim
37 words
An apparatus for chemical mechanical polishing a semiconductor wafer with extended pad life according to claim 1 further comprising at least two solution reservoirs for sequentially supplying at least two cleaning solutions to said second spray nozzle.
Claim 6
Dependent Claim
45 words
An apparatus for chemical mechanical polishing a semiconductor wafer with extended pad life according to claim 1 further comprising a reservoir for cleaning solution and a reservoir for deionized water for sequentially feeding said cleaning solution and said deionized water through said second spray nozzle.
Claim 7
Dependent Claim
31 words
An apparatus for chemical mechanical polishing a semiconductor wafer with extended pad life according to claim 1 further comprising a conduit for feeding a cleaning solution to said second spray nozzle.
Claim 8
Dependent Claim
26 words
An apparatus for chemical mechanical polishing a semiconductor wafer with extended pad life according to claim 1 , wherein said cleaning solution comprises an acid-containing solution.
Claim 9
Dependent Claim
107 words
A two-step method for cleaning a polishing pad in a chemical mechanical polishing apparatus comprising the steps of: mounting a cleaning solution spray nozzle juxtaposed to a conditioning pad, dispensing a first cleaning solution from said spray nozzle onto a top surface of a rotating polishing pad, intimately contacting said conditioning pad with said top surface of the rotating polishing pad and substantially dissolving a polishing debris on said top surface of the polishing pad by said first cleaning solution, and dispensing a second cleaning solution from said spray nozzle onto said top surface of the rotating polishing pad until said dissolved polishing debris is substantially removed.
Claim 10
Dependent Claim
107 words
A two-step method for cleaning a polishing pad in a chemical mechanical polishing apparatus comprising the steps of: mounting a cleaning solution spray nozzle juxtaposed to a conditioning pad, dispensing a first cleaning solution from said spray nozzle onto a top surface of a rotating polishing pad, intimately contacting said conditioning pad with said top surface of the rotating polishing pad and substantially dissolving a polishing debris on said top surface of the polishing pad by said first cleaning solution, and dispensing a second cleaning solution from said spray nozzle onto said top surface of the rotating polishing pad until said dissolved polishing debris is substantially removed.
Claim 11
Dependent Claim
40 words
A two-step method for cleaning a polishing pad in a chemical mechanical polishing apparatus according to claim 8 further comprising the steps of dispensing a first cleaning solution of an acid-containing solution and a second cleaning solution of deionized water.
Claim 12
Dependent Claim
33 words
A two-step method for cleaning a polishing pad in a chemical mechanical polishing apparatus according to claim 8 further comprising the step of dissolving and removing a polishing debris containing a metal oxide.
Claim 13
Dependent Claim
45 words
A two-step method for cleaning a polishing pad in a chemical mechanical polishing apparatus according to claim 8 further comprising the step of dissolving and removing a polishing debris containing at least one oxide selected from the group consisting of cuprous oxide and cupric oxide.
Claim 14
Dependent Claim
38 words
A two-step method for cleaning a polishing pad in a chemical mechanical polishing apparatus according to claim 8 further comprising the step of dispensing said second cleaning solution from said spray nozzle to neutralize said first cleaning solution.
Claim 15
Dependent Claim
42 words
A two-step method for cleaning a polishing pad in a chemical mechanical polishing apparatus according to claim 8 further comprising the step of dispensing said second cleaning solution at a higher flow rate than a rate said first cleaning solution is dispensed.
Claim 16
Dependent Claim
37 words
A two-step method for cleaning a polishing pad in a chemical mechanical polishing apparatus according to claim 8 further comprising the step of dispensing said first cleaning solution at a flow rate of at least 200 ml/min.
Claim 17
Dependent Claim
38 words
A two-step method for cleaning a polishing pad in a chemical mechanical polishing apparatus according to claim 8 further comprising the step of mounting said cleaning solution spray nozzle on a conditioner arm adjacent to said conditioning pad.
Claim 18
Independent Claim
136 words
An apparatus for chemical mechanical polishing copper on a semiconductor wafer and for removing a polishing debris from said wafer comprising: a rotating platen having a polishing pad mounted on top, a first liquid dispenser mounted over said polishing pad for dispensing a slurry solution on said polishing pad, a wafer holder for holding a wafer and for pressing an active surface thereof against said polishing pad, a conditioning pad for intimately engaging said polishing pad, at least two different cleaning solutions for dissolving polishing debris on said polishing pad, a second liquid dispenser mounted juxtaposed to said conditioning pad for dispensing sequentially said at least two different cleaning solutions onto said polishing pad, and at least two cleaning solution reservoirs for storing at least two different cleaning solutions for feeding to said second liquid dispenser.
Claim 19
Independent Claim
136 words
An apparatus for chemical mechanical polishing copper on a semiconductor wafer and for removing a polishing debris from said wafer comprising: a rotating platen having a polishing pad mounted on top, a first liquid dispenser mounted over said polishing pad for dispensing a slurry solution on said polishing pad, a wafer holder for holding a wafer and for pressing an active surface thereof against said polishing pad, a conditioning pad for intimately engaging said polishing pad, at least two different cleaning solutions for dissolving polishing debris on said polishing pad, a second liquid dispenser mounted juxtaposed to said conditioning pad for dispensing sequentially said at least two different cleaning solutions onto said polishing pad, and at least two cleaning solution reservoirs for storing at least two different cleaning solutions for feeding to said second liquid dispenser.
Claim 20
Dependent Claim
44 words
An apparatus for chemical mechanical polishing copper on a semiconductor wafer and for removing a polishing debris from said wafer according to claim 11 , wherein said at least two different cleaning solutions comprises an acid-containing solution, an ammonium hydroxide-containing solution and deionized water.
Claim 21
Dependent Claim
36 words
An apparatus for chemical mechanical polishing copper on a semiconductor wafer and for removing a polishing debris from said wafer according to claim 16 , wherein said second liquid dispenser is mounted on a conditioner arm.
Claim 22
Dependent Claim
44 words
An apparatus for chemical mechanical polishing copper on a semiconductor wafer and for removing a polishing debris from said wafer according to claim 16 further comprising at least one conduit for feeding said at least two different cleaning solutions from said second liquid dispenser.
Claim 23
Dependent Claim
49 words
An apparatus for chemical mechanical polishing copper on a semiconductor wafer and for removing a polishing debris from said wafer according to claim 16 further comprising a three-way valve and a pump for selecting and pumping one of said at least two cleaning solutions to said second liquid dispenser.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-05-07 | 2004-11-06 | 2005-05-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-05-07 | 2008-11-06 | 2009-05-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-05-07 | 2012-11-06 | 2013-05-08 | $7700.00 | Window Closed / Lapsed |