Patent US6207567B1 successfully refreshed from Google Patents.
US6207567B1
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Fabricating method of glue layer and barrier layer
Assignee: United Microelectronics Corp
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Filing: 1999-04-12
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Granted: 2001-03-27
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Expires: 2019-04-12
Abstract
Abstract A method of fabricating a glue layer and a barrier layer. A Ti layer is formed with a collimator sputtering in the via opening or the contact opening of the substrate. Through the control of flow of N 2 and Ar, a nitride mode TiN x layer is formed on the Ti layer by sputtering. The nitride mode TiN x layer and the Ti layer uncovered by the nitride mode TiN x layer are treated with N 2 RF plasma. This strengthens the structure of the nitride mode TiN x layer and allows the reaction with the exposed Ti layer so that it is transformed into a TiN x layer.
Inventors
- 👤 Chein-Cheng Wang
- 👤 Shih-Chanh Chang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:54
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/047; H10W20/048; H10W20/033
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
75 words
A fabricating method of forming a glue layer and a barrier layer, comprising the steps of: forming a Ti layer on a substrate; forming a nitride mode TiN x layer on the Ti layer; and performing a step of N 2 radiation frequency (RF) plasma treatment at a pressure of about 1-10 Torr, a temperature of about 200-360° C., an N 2 flow rate of about 4000-6000 sccm, and a power of about 80-200 W.
Claim 2
Dependent Claim
75 words
A fabricating method of forming a glue layer and a barrier layer, comprising the steps of: forming a Ti layer on a substrate; forming a nitride mode TiN x layer on the Ti layer; and performing a step of N 2 radiation frequency (RF) plasma treatment at a pressure of about 1-10 Torr, a temperature of about 200-360° C., an N 2 flow rate of about 4000-6000 sccm, and a power of about 80-200 W.
Claim 3
Dependent Claim
24 words
The fabricating method of claim 1 , wherein the step for forming the Ti layer involves a collimator sputtering to deposit the Ti layer.
Claim 4
Dependent Claim
30 words
The fabricating method of claim 2 , wherein the step for forming the nitride mode TiN x layer involves a collimator sputtering to deposit the nitride mode TiN x layer.
Claim 5
Dependent Claim
27 words
The fabricating method of claim 3 , wherein the step for forming the nitride mode TiN x layer uses N 2 and Ar as a gas source.
Claim 6
Dependent Claim
44 words
The fabricating method of claim 3 , wherein the step for forming the nitride mode TiN x layer involves using a gas source of N 2 with a flow rate of about 90-150 sccm and Ar with a flow rate of about 30-50 sccm.
Claim 7
Dependent Claim
43 words
The fabricating method of claim 1 , wherein the step for forming the nitride mode TiN x layer uses a gas source of N 2 with a flow rate of about 90-150 sccm and Ar with a flow rate of about 30-50 sccm.
Claim 8
Independent Claim
127 words
A method of fabricating a metal interconnect applicable to a substrate, in which a dielectric layer is formed on the substrate with a via opening in the dielectric layer to expose the substrate, comprising the steps of: forming a Ti layer on the substrate to cover the via opening; forming a nitride mode TiN x layer on the Ti layer; performing a step of N 2 radiation frequency (RF) plasma treatment at a pressure of about 1-10 Torr, a temperature of about 200-360° C., an N 2 flow rate of about 4000-6000 sccm, and a power of about 80-200 W; forming a metal layer on the substrate to fill the via opening; and defining the Ti layer, the nitride mode TiN x layer, and the metal layer.
Claim 9
Independent Claim
127 words
A method of fabricating a metal interconnect applicable to a substrate, in which a dielectric layer is formed on the substrate with a via opening in the dielectric layer to expose the substrate, comprising the steps of: forming a Ti layer on the substrate to cover the via opening; forming a nitride mode TiN x layer on the Ti layer; performing a step of N 2 radiation frequency (RF) plasma treatment at a pressure of about 1-10 Torr, a temperature of about 200-360° C., an N 2 flow rate of about 4000-6000 sccm, and a power of about 80-200 W; forming a metal layer on the substrate to fill the via opening; and defining the Ti layer, the nitride mode TiN x layer, and the metal layer.
Claim 10
Dependent Claim
24 words
The fabricating method of claim 7 , wherein the step of forming the Ti layer involves a collimator sputtering to deposit the Ti layer.
Claim 11
Dependent Claim
30 words
The fabricating method of claim 8 , wherein the step of forming the nitride mode TiN x layer involves a collimator sputtering to deposit the nitride mode TiN x layer.
Claim 12
Dependent Claim
26 words
The fabricating method of claim 9 , wherein the step of forming the nitride mode TiN x uses N 2 and Ar as a gas source.
Claim 13
Dependent Claim
42 words
The fabricating method of claim 9 , wherein the step of forming the nitride mode TiN x uses a gas source of N 2 with a flow rate of about 90-150 sccm and Ar with a flow rate of about 30-50 sccm.
Claim 14
Dependent Claim
13 words
The fabricating method of claim 9 , wherein the metal layer includes tungsten.
Claim 15
Dependent Claim
43 words
The fabricating method of claim 9 , wherein the step for forming the nitride mode TiN x layer uses a gas source of N 2 with a flow rate of about 90-150 sccm and Ar with a flow rate of about 30-50 sccm.
Claim 16
Dependent Claim
13 words
The fabricating method of claim 9 , wherein the metal layer includes tungsten.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-03-26 | 2004-09-25 | 2005-03-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-03-26 | 2008-09-25 | 2009-03-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-03-26 | 2012-09-25 | 2013-03-27 | $7700.00 | Window Closed / Lapsed |