Patent US6316064B1 successfully refreshed from Google Patents.
Patent US6194752B1 successfully refreshed from Google Patents.
US6194752B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Dielectric device, dielectric memory and method of fabricating the same
Assignee: FOOTHILLS IP LLC
•
Filing: 1998-06-15
•
Granted: 2001-02-27
•
Expires: 2018-06-15
Abstract
Abstract A gate insulating layer and a first lower electrode are formed on a channel region of a silicon substrate, and an interlayer insulating film is formed on the silicon substrate so as to cover the first lower electrode and the gate insulating film. A buffer layer is formed on the interlayer insulating film, and a contact hole is formed in the interlayer insulating film and the buffer layer on the first lower electrode. A connecting layer and a second lower electrode are formed in the contact hole. A ferroelectric thin film and an upper electrode are formed in this order on the buffer layer so as to be brought into contact with the upper surface of the second lower electrode.
Inventors
- 👤 Satoru Ogasahara
- 👤 Mitsuaki Harada
- 👤 Hiroaki Furukawa
- 👤 Takashi Goto
- 👤 Tatsuro Gueshi
- 👤 Yoshiyuki Ishizuka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:40
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D30/00; H10D30/60; H10D30/701
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
129 words
A dielectric memory comprising: first and second impurity regions formed with predetermined spacing in a semiconductor; a gate insulating film formed on a region between said first and second impurity regions; a first lower electrode layer formed on said gate insulating film; an interlayer insulating film formed on said semiconductor so as to cover said first lower electrode layer and said gate insulating film and having a contact hole; a second lower electrode layer formed in said contact hole of said interlayer insulating film and electrically connected to said first lower electrode layer; a dielectric film formed on said interlayer insulating film so as to be brought into contact with the upper surface of said second lower electrode layer; and an upper electrode layer formed on said dielectric film.
Claim 2
Dependent Claim
129 words
A dielectric memory comprising: first and second impurity regions formed with predetermined spacing in a semiconductor; a gate insulating film formed on a region between said first and second impurity regions; a first lower electrode layer formed on said gate insulating film; an interlayer insulating film formed on said semiconductor so as to cover said first lower electrode layer and said gate insulating film and having a contact hole; a second lower electrode layer formed in said contact hole of said interlayer insulating film and electrically connected to said first lower electrode layer; a dielectric film formed on said interlayer insulating film so as to be brought into contact with the upper surface of said second lower electrode layer; and an upper electrode layer formed on said dielectric film.
Claim 3
Dependent Claim
38 words
The dielectric memory according to claim 1 , further comprising a connecting layer formed under said second lower electrode layer in said contact hole for electrically connecting said second lower electrode layer to said first lower electrode layer.
Claim 4
Dependent Claim
19 words
The dielectric memory according to claim 1 , further comprising a buffer layer formed on said interlayer insulating film.
Claim 5
Dependent Claim
16 words
The dielectric memory according to claim 1 , wherein said dielectric film is a ferroelectric film.
Claim 6
Dependent Claim
17 words
The dielectric memory according to claim 4 , wherein said ferroelectric film has a perovskite crystal structure.
Claim 7
Independent Claim
127 words
A method of fabricating a dielectric memory, comprising the steps of: forming a gate insulating film on a channel region; forming a first lower electrode layer on said gate insulating film; forming an interlayer insulating film so as to cover said first lower electrode layer and said gate insulating film; forming a contact hole in said interlayer insulating film; forming a second lower electrode layer electrically connected to said first lower electrode layer in said contact hole of said interlayer insulating film; forming a dielectric film on said interlayer insulating film so as to be brought into contact with the upper surface of said second lower electrode layer; forming an upper electrode layer on said dielectric film; and patterning said upper electrode layer and said dielectric film.
Claim 8
Independent Claim
127 words
A method of fabricating a dielectric memory, comprising the steps of: forming a gate insulating film on a channel region; forming a first lower electrode layer on said gate insulating film; forming an interlayer insulating film so as to cover said first lower electrode layer and said gate insulating film; forming a contact hole in said interlayer insulating film; forming a second lower electrode layer electrically connected to said first lower electrode layer in said contact hole of said interlayer insulating film; forming a dielectric film on said interlayer insulating film so as to be brought into contact with the upper surface of said second lower electrode layer; forming an upper electrode layer on said dielectric film; and patterning said upper electrode layer and said dielectric film.
Claim 9
Dependent Claim
47 words
The method according to claim 6 , wherein the step of forming said second lower electrode layer comprises the steps of forming a connecting layer up to a predetermined depth of said contact hole, and forming an electrode layer on said connecting layer in said contact hole.
Claim 10
Dependent Claim
21 words
The method according to claim 7 , further comprising the steps of: forming a diffusion barrier layer on said connecting layer.
Claim 11
Dependent Claim
18 words
The method according to claim 6 , further comprising: forming a buffer layer on said interlayer insulating film.
Claim 12
Dependent Claim
15 words
The method according to claim 6 , wherein said dielectric film is a ferroelectric film.
Claim 13
Dependent Claim
16 words
The method according to claim 10 , wherein said ferroelectric film has a perovskite crystal structure.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-02-27 | 2004-08-28 | 2005-02-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-02-27 | 2008-08-28 | 2009-02-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-02-27 | 2012-08-28 | 2013-02-27 | $7700.00 | Window Closed / Lapsed |