US6187641B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Lateral MOSFET having a barrier between the source/drain region and the channel region using a heterostructure raised source/drain region
Assignee: Texas Instruments Inc
•
Filing: 1998-12-03
•
Granted: 2001-02-13
•
Expires: 2018-12-03
Abstract
Abstract A MOSFET (100) having a heterostructure raised source/drain region and method of making the same. A two layer raised source drain region (106) is located adjacent a gate structure (112). The first layer (106a) is a barrier layer comprising a first material (e.g., SiGe, SiC). The second layer (106b) comprises a second, different material (e.g. Si). The material of the barrier layer (106a) is chosen to provide an energy band barrier between the raised source/drain region (106) and the channel region (108).
Inventors
- 👤 Mark S. Rodder
- 👤 William U. Liu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 19:58
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/027; H10D30/0275; H10D30/60; H10D62/00; H10D62/80; H10D62/82; H10D62/822; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01324; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D64/511; H10D64/517; H10D64/518; H10D30/0217; H10D62/83; H10D62/832; H10D62/8325; H10D64/017
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
85 words
A method of forming a lateral transistor comprising the steps of: forming a gate structure over a defined channel region of a substrate; forming a barrier layer of a raised source drain region over a region of said substrate adjacent said channel region, said barrier layer comprising a silicon-carbide; and forming an upper layer of said raised source/drain region over said barrier layer, said upper layer comprising silicon, said silicon carbide providing an energy band barrier been said raised source/drain region and said channel region.
Claim 2
Independent Claim
85 words
A method of forming a lateral transistor comprising the steps of: forming a gate structure over a defined channel region of a substrate; forming a barrier layer of a raised source drain region over a region of said substrate adjacent said channel region, said barrier layer comprising a silicon-carbide; and forming an upper layer of said raised source/drain region over said barrier layer, said upper layer comprising silicon, said silicon carbide providing an energy band barrier been said raised source/drain region and said channel region.
Claim 3
Dependent Claim
23 words
The method of claim 1 , wherein said first material provides an energy band barrier between said upper layer and said channel region.
Claim 4
Dependent Claim
21 words
The method of claim 1 , wherein an energy band barrier is provided between said first material and said channel region.
Claim 5
Dependent Claim
77 words
The method of claim 1 , wherein the step of forming said gate structure comprises the steps of: forming a disposable gate over said defined channel region of a substrate; forming a dielectric layer over at least a portion of said upper layer of said raised source/drain region; selectively removing said disposable gate without substantially removing said dielectric layer; forming a gate dielectric over said defined channel region; and forming a gate electrode over said gate dielectric.
Claim 6
Dependent Claim
35 words
The method of claim 1 , wherein said gate dielectric and gate electrode are adjacent to a portion of said raised source/drain region, wherein said gate dielectric separates said gate electrode from said source/drain region.
Claim 7
Dependent Claim
36 words
The method of claim 4 , wherein said gate dielectric and gate electrode are adjacent to a portion of said raised source/drain region, wherein said gate dielectric separates said gate electrode from said raised source/drain region.
Claim 8
Dependent Claim
13 words
The method of claim 4 , wherein said gate electrode comprises non-crystalline silicon.
Claim 9
Dependent Claim
52 words
The method of claim 1 , wherein said step of forming a gate structure comprises the steps of: forming a gate dielectric over said substrate; forming a gate electrode over said gate dielectric; and patterning and etching said gate electrode and gate dielectric to form said gate structure over said channel region.
Claim 10
Independent Claim
163 words
A method of forming a lateral transistor comprising the steps of: forming a gate structure over a defined channel region of a substrate, wherein the step of forming said gate structure comprising the steps of: forming a disposable gate over said defined channel region of a substrate; forming a dielectric layer over at least a portion of said upper layer of said raised source/drain region; selectively removing said disposable gate without substantially removing said dielectric layer; forming a gate dielectric over said defined channel region; and forming a gate electrode over said gate dielectric; forming a barrier layer of a raised source/drain region over a region of said substrate adjacent said channel region, said barrier layer comprising a first material; and forming an upper layer of said raised source/drain region over said barrier layer, said upper layer comprising a second material different from said first material, said first material providing an energy band barrier between said raised source/drain region and said channel region.
Claim 11
Independent Claim
163 words
A method of forming a lateral transistor comprising the steps of: forming a gate structure over a defined channel region of a substrate, wherein the step of forming said gate structure comprising the steps of: forming a disposable gate over said defined channel region of a substrate; forming a dielectric layer over at least a portion of said upper layer of said raised source/drain region; selectively removing said disposable gate without substantially removing said dielectric layer; forming a gate dielectric over said defined channel region; and forming a gate electrode over said gate dielectric; forming a barrier layer of a raised source/drain region over a region of said substrate adjacent said channel region, said barrier layer comprising a first material; and forming an upper layer of said raised source/drain region over said barrier layer, said upper layer comprising a second material different from said first material, said first material providing an energy band barrier between said raised source/drain region and said channel region.
Claim 12
Dependent Claim
23 words
The method of claim 9 , wherein said first material provides an energy band barrier between said upper layer and said channel region.
Claim 13
Dependent Claim
21 words
The method of claim 9 , wherein an energy band barrier is provided between said first material and said channel region.
Claim 14
Dependent Claim
35 words
The method of claim 9 , wherein said gate dielectric and gate electrode are adjacent to a portion of said raised source/drain region, wherein said gate dielectric separates said gate electrode from said source/drain region.
Claim 15
Dependent Claim
36 words
The method of claim 9 , wherein said gate dielectric and gate electrode are adjacent to a portion of said raised source/drain region, wherein said gate dielectric separates said gate electrode from said raised source/drain region.
Claim 16
Dependent Claim
13 words
The method of claim 1 , wherein said gate electrode comprises non-crystalline silicon.
Claim 17
Dependent Claim
18 words
The method of claim 9 , wherein said upper layer comprises silicon and said barrier layer comprises silicon-carbide.
Claim 18
Dependent Claim
19 words
The method of claim 9 , wherein said upper layer comprises silicon and said barrier layer comprises silicon germanium.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-02-13 | 2004-08-14 | 2005-02-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-02-13 | 2008-08-14 | 2009-02-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-02-13 | 2012-08-14 | 2013-02-13 | $7700.00 | Window Closed / Lapsed |