Method of manufacturing semiconductor device

Claim 1

A method of manufacturing a semiconductor device in which a capacitor having a storage electrode is formed on a semiconductor substrate, comprising the steps of: forming silicon films on the semiconductor substrate and at the same time forming first and second endpoint marker layers for dividing the silicon films into three parts in a direction of thickness by using a material different from a material of the silicon films; etching the silicon films including the first and second endpoint marker layers; and controlling an etching depth of the silicon films based on the type of etched material, thereby forming the storage electrode.

Claim 2

A method of manufacturing a semiconductor device in which a capacitor having a storage electrode is formed on a semiconductor substrate, comprising the steps of: forming silicon films on the semiconductor substrate and at the same time forming first and second endpoint marker layers for dividing the silicon films into three parts in a direction of thickness by using a material different from a material of the silicon films; etching the silicon films including the first and second endpoint marker layers; and controlling an etching depth of the silicon films based on the type of etched material, thereby forming the storage electrode.

Claim 9

A method of manufacturing a semiconductor device, comprising the steps of: forming a semiconductor element on a semiconductor substrate; forming an interlevel insulating film on the semiconductor element; forming a contact hole in the interlevel insulating film to reach the semiconductor substrate; forming a first silicon film on the interlevel insulating film to fill the contact hole with the first silicon film; forming a first endpoint marker layer on the first silicon film from a material different from a material of the first silicon film; forming a second silicon film on the first endpoint marker layer; forming a second endpoint marker layer on the second silicon film from a material different from a material of a storage electrode; forming a third silicon film on the second endpoint marker layer; etching the third silicon film to form a fourth silicon film having a width above the contact hole, the etching being controlled in accordance with changes in type of etched material; forming a sidewall from silicon oxide on a sidewall of the fourth silicon film; and etching the second and fourth silicon films using the sidewall as a mask, and forming an opening in the second silicon film to form a storage electrode, the etching being controlled in accordance with changes in type of etched material.

Claim 10

A method of manufacturing a semiconductor device, comprising the steps of: forming a semiconductor element on a semiconductor substrate; forming an interlevel insulating film on the semiconductor element; forming a contact hole in the interlevel insulating film to reach the semiconductor substrate; forming a first silicon film on the interlevel insulating film to fill the contact hole with the first silicon film; forming a first endpoint marker layer on the first silicon film from a material different from a material of the first silicon film; forming a second silicon film on the first endpoint marker layer; forming a second endpoint marker layer on the second silicon film from a material different from a material of a storage electrode; forming a third silicon film on the second endpoint marker layer; etching the third silicon film to form a fourth silicon film having a width above the contact hole, the etching being controlled in accordance with changes in type of etched material; forming a sidewall from silicon oxide on a sidewall of the fourth silicon film; and etching the second and fourth silicon films using the sidewall as a mask, and forming an opening in the second silicon film to form a storage electrode, the etching being controlled in accordance with changes in type of etched material.