Patent JPS5565918A successfully refreshed from Google Patents.
Patent US6176925B1 successfully refreshed from Google Patents.
US6176925B1
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Detached and inverted epitaxial regrowth & methods
Assignee: Panasonic Holdings Corp
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Filing: 1999-05-07
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Granted: 2001-01-23
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Expires: 2019-05-07
Abstract
Abstract An n-doped, high quality gallium nitride substrate suitable for further device or epitaxial processing, and method for making the same. The nitride substrate is produced by epitaxial deposition of first metal nitride layer on a non-native substrate followed by a second deposition of metal nitride. During the second deposition of metal nitride, a liquid metal layer is formed at the interface of the non-native substrate and the metal nitride layer form. The formed metal nitride layer may be detached from the non-native substrate to provide an metal nitride substrate with a high quality inverse surface. A epitaxial metal nitride layer may be deposited on the inverse surface of metal nitride substrate. The metal nitride substrate and the epitaxial metal nitride layer thereon may be deposited using the same hydride vapor-phase epitaxy system.
Inventors
- 👤 Glenn S. Solomon
- 👤 David J. Miller
- 👤 Tetsuzo Ueda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 12:22
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/40; C30B29/403; C30B29/406; H; H10; H10P; H10P14/00; H10P14/20; H10P14/203; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3216; H10P14/3238; H10P14/3241; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3416; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10H20/01335; H10H20/018; Y; Y10; Y10S; Y10S117/00; Y10S117/915
Claims Analysis
Total Claims: 46
Claim 1
Independent Claim
76 words
A method of making a metal nitride film in a reactor, comprising the steps of: a) providing a non-native substrate; b) performing a first deposition of metal nitride to form a first metal nitride layer on said substrate; c) performing a second deposition of metal nitride to form a composite nitride layer comprising nitride material of said first nitride layer and concurrently forming a liquid metal layer juxtaposed between said composite layer formed and said substrate.
Claim 2
Independent Claim
76 words
A method of making a metal nitride film in a reactor, comprising the steps of: a) providing a non-native substrate; b) performing a first deposition of metal nitride to form a first metal nitride layer on said substrate; c) performing a second deposition of metal nitride to form a composite nitride layer comprising nitride material of said first nitride layer and concurrently forming a liquid metal layer juxtaposed between said composite layer formed and said substrate.
Claim 3
Dependent Claim
15 words
The method of claim 1 , wherein said step a) comprises providing a silicon substrate.
Claim 4
Dependent Claim
20 words
The method of claim 2 , wherein said silicon substrate is a silicon substrate comprising a layer of silicon nitride.
Claim 5
Dependent Claim
20 words
The method of claim 1 , wherein said composite metal nitride layer comprises at least one n-doped group III nitride.
Claim 6
Dependent Claim
33 words
The method of claim 1 , wherein said composite metal nitride layer is a group III metal nitride comprising at least one element selected from the group consisting of Ga, In and Al.
Claim 7
Dependent Claim
14 words
The method of claim 1 , wherein said step b) is performed by MOCVD.
Claim 8
Dependent Claim
14 words
The method of claim 1 , wherein said step c) is performed by HVPE.
Claim 9
Dependent Claim
25 words
The method of claim 1 , wherein said liquid metal layer comprises a liquid metal, selected from the group consisting of gallium, indium, and aluminum.
Claim 10
Dependent Claim
17 words
The method of claim 1 , wherein said liquid metal layer remains liquid at about room temperature.
Claim 11
Dependent Claim
27 words
The method of claim 1 , further comprising a step d) of removing said composite nitride layer form said substrate to provide a native metal nitride substrate.
Claim 12
Dependent Claim
16 words
The method of claim 10 , wherein said composite nitride layer is removed by acid etching.
Claim 13
Dependent Claim
31 words
The method of claim 1 , wherein said second metal nitride layer includes an inverse surface adjacent to said liquid metal layer, and said step d) comprises revealing said inverse surface.
Claim 14
Independent Claim
105 words
A method of forming a metal nitride substrate in a reactor, comprising the steps of: a) providing a non-native substrate; b) performing a first deposition of metal nitride to form a first metal nitride layer on said substrate; c) performing a second deposition of metal nitride to form a composite nitride layer comprising nitride material of said first nitride layer and concurrently forming a liquid metal layer juxtaposed between said composite layer and said substrate; d) detaching said composite nitride layer from said non-native substrate to provide a native metal nitride substrate; and e) depositing an epitaxial metal nitride layer said native metal nitride substrate.
Claim 15
Independent Claim
105 words
A method of forming a metal nitride substrate in a reactor, comprising the steps of: a) providing a non-native substrate; b) performing a first deposition of metal nitride to form a first metal nitride layer on said substrate; c) performing a second deposition of metal nitride to form a composite nitride layer comprising nitride material of said first nitride layer and concurrently forming a liquid metal layer juxtaposed between said composite layer and said substrate; d) detaching said composite nitride layer from said non-native substrate to provide a native metal nitride substrate; and e) depositing an epitaxial metal nitride layer said native metal nitride substrate.
Claim 16
Dependent Claim
27 words
The method of claim 13 , wherein said epitaxial nitride layer is intentionally n-doped by inclusion of a n-dopant gas during deposition of said epitaxial nitride layer.
Claim 17
Dependent Claim
41 words
The method of claim 14 , wherein said n-dopant gas silicon source gas selected form the group consisting of SH 4 , SiHCl 3 , SiH 2 Cl 2 , SiH 3 Cl, SiCl 4 and Si 2 H 2 .
Claim 18
Dependent Claim
36 words
The method of claim 13 , wherein composite nitride layer includes an inverse surface, and said method further comprises the step of inverting said native metal nitride substrate prior to depositing said epitaxial metal nitride layer.
Claim 19
Dependent Claim
26 words
The method of claim 16 , wherein said step d) comprises forming said epitaxial metal nitride layer on said inverse surface of said composite nitride layer.
Claim 20
Dependent Claim
27 words
The method of claim 13 , wherein step c) is performed in the presence of a reagent gases and HCl and said rector is configured for HVPE.
Claim 21
Dependent Claim
31 words
The method of claim 13 , wherein said non-native substrate comprises silicon, and said liquid metal layer comprises a liquid metal selected from the group consisting of gallium, indium, and aluminum.
Claim 22
Dependent Claim
38 words
The method of claim 13 , wherein said first metal nitride layer, said composite nitride layer, and said epitaxial metal nitride layer comprise a material selected from the group consisting of gallium nitride, indium nitride, and aluminum nitride.
Claim 23
Dependent Claim
31 words
The method of claim 13 , wherein said epitaxial metal nitride layer comprises a high quality GaN substrate, having a thickness in the range of from about 10 to 500 microns.
Claim 24
Dependent Claim
42 words
The method of claim 13 , wherein said non-native substrate is a silicon substrate, and said step b) comprises forming a layer of silicon nitride on said non-native substrate, wherein said first metal nitride layer is formed on said silicon nitride layer.
Claim 25
Dependent Claim
21 words
The method of claim 13 , wherein said steps b) and c) are performed in presence of reagent gases including HCl.
Claim 26
Dependent Claim
30 words
The method of claim 23 , wherein said first nitride layer formed in said step b) is arranged in said reactor, and said reagent gases are introduced into said reactor.
Claim 27
Dependent Claim
35 words
The method of claim 24 , wherein said reagent gases include ammonia and at least one reagent gas selected from the group consisting of a chloride of gallium, a chloride indium, and a chloride aluminum.
Claim 28
Dependent Claim
36 words
The method of claim 25 , wherein said step c) includes the formation of GaCl that reacts with said substrate to from Ga metal at an interface of said first nitride layer and said silicon substrate.
Claim 29
Dependent Claim
34 words
The method of claim 13 , wherein step d) comprises acid etching said non-native at a temperature in the range of from about 30 to 100° C. to provide said native metal nitride substrate.
Claim 30
Dependent Claim
19 words
The method of claim 13 , wherein said steps b) and c) are performed in the same said reactor.
Claim 31
Dependent Claim
29 words
The method of claim 13 , wherein said non-native substrate is a silicon substrate, and said composite nitride layer is automatically doped with silicon, prior to said step d).
Claim 32
Dependent Claim
32 words
The method of claim 13 , wherein said epitaxial metal nitride layer is a group III nitride comprising at east one element selected form the group selected from Ga, Al and In.
Claim 33
Dependent Claim
34 words
A native metal nitride substrate adapted for metal nitride epitaxial deposition, comprising: a metal nitride layer formed by HVPE comprising an inverse surface, and said inverse surface formed adjacent to a liquid metal layer.
Claim 34
Dependent Claim
34 words
A native metal nitride substrate adapted for metal nitride epitaxial deposition, comprising: a metal nitride layer formed by HVPE comprising an inverse surface, and said inverse surface formed adjacent to a liquid metal layer.
Claim 35
Dependent Claim
32 words
The native metal nitride substrate of claim 31 , further comprising an epitaxial metal nitride layer disposed on said inverse surface of said native metal nitride substrate to form a nitride structure.
Claim 36
Dependent Claim
41 words
The native metal nitride substrate of claim 31 , wherein said native metal nitride substrate is formed on a silicon substrate, and said native metal nitride substrate is heavily doped with silicon, said silicon derived by diffusion from said silicon substrate.
Claim 37
Dependent Claim
31 words
The nitride structure of claim 33 , wherein said native metal nitride substrate is formed on a silicon substrate, and said native metal nitride substrate is detached from said silicon substrate.
Claim 38
Dependent Claim
35 words
The nitride structure of claim 32 , wherein said native metal nitride substrate and said epitaxial metal nitride layer comprise a material selected from the group consisting of gallium nitride, indium nitride, and aluminum nitride.
Claim 39
Dependent Claim
15 words
The nitride structure 32 , wherein said epitaxial metal nitride layer is formed by HVPE.
Claim 40
Dependent Claim
15 words
The nitride structure 32 , wherein said epitaxial metal nitride layer is formed by HVPE.
Claim 41
Dependent Claim
20 words
The nitride structure 32 , wherein said substrate and said epitaxial nitride layer are formed in the same said reactor.
Claim 42
Dependent Claim
20 words
The nitride structure 32 , wherein said substrate and said epitaxial nitride layer are formed in the same said reactor.
Claim 43
Dependent Claim
41 words
The nitride structure 32 , wherein said native metal nitride substrate has a thickness in the range of from 10 to 500 microns and said epitaxial nitride layer has a thickness in the range of from about 10 to 500 microns.
Claim 44
Dependent Claim
41 words
The nitride structure 32 , wherein said native metal nitride substrate has a thickness in the range of from 10 to 500 microns and said epitaxial nitride layer has a thickness in the range of from about 10 to 500 microns.
Claim 45
Dependent Claim
22 words
The native metal nitride substrate of claim 31 , wherein said liquid metal layer comprises liquid gallium, liquid indium, or liquid aluminum.
Claim 46
Dependent Claim
25 words
The native metal nitride substrate of claim 31 , wherein said liquid metal layer is formed by reaction of a silicon with GaCl during HVPE.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-01-23 | 2004-07-24 | 2005-01-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-01-23 | 2008-07-24 | 2009-01-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-01-23 | 2012-07-24 | 2013-01-23 | $7700.00 | Window Closed / Lapsed |