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US6174747B1
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Method of fabricating ridge waveguide semiconductor light-emitting device
Assignee: Industrial Technology Research Institute
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Filing: 1999-03-30
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Granted: 2001-01-16
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Expires: 2019-03-30
Abstract
Abstract A method of fabricating a ridge waveguide semiconductor light-emitting device is provided in which an oxide semiconductor having a heavy carrier concentration serves as the interface of the metal layer and the epitaxial layer to make the current flow through the ridge waveguide. This invention forms an oxide semiconductor having a heavy carrier concentration thereon after finishing the basic structure of a ridge waveguide semiconductor light-emitting device, then forms a metal layer to conduct current. Since the carrier concentration at the surface of the ridge waveguide is higher than that at the inner portion, the current primarily flows through the interface of the oxide semiconductor having a heavy carrier concentration and the vertex of the ridge waveguide. Thus the current is restricted to only flow through the vertex of the ridge waveguide.
Inventors
- 👤 Jin-Kuo Ho
- 👤 Chienchia Chiu
- 👤 Chenn-Shiung Cheng
- 👤 Tse-Jun Chen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 20:46
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/04; H01S5/042; H01S5/0425; H01S5/04252; H01S5/0421; H01S5/2054; H01S5/2081; H01S5/223; H01S5/2231; H10; H10H; H10H29/00; H10H29/10; H10H29/14; H10H29/142
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
176 words
A method of fabricating a ridge waveguide semiconductor light-emitting device comprising the steps of: (i) sequentially forming a first conductivity type cladding layer over a substrate, a first undoped confinement layer over the first conductivity type cladding layer, an active layer over the first undoped confinement layer, a second undoped confinement layer over the active layer, a second conductivity type cladding layer over the second undoped confinement layer, a second conductivity type barrier reduction layer over the second conductivity type cladding layer, and a second conductivity type cap layer over the second conductivity type barrier reduction layer; (ii) partially etching the second conductivity type cap layer, the second conductivity type barrier reduction layer and the second conductivity type cladding layer to a position near the second confinement layer to form a ridge waveguide; (iii) forming a photoresist layer to mask the ridge waveguide; (iv) removing the second conductivity type cap layer which is not covered by the photoresist layer, and then removing the photoresist layer; and (v) forming a metal oxide and a metal layer thereon.
Claim 2
Independent Claim
176 words
A method of fabricating a ridge waveguide semiconductor light-emitting device comprising the steps of: (i) sequentially forming a first conductivity type cladding layer over a substrate, a first undoped confinement layer over the first conductivity type cladding layer, an active layer over the first undoped confinement layer, a second undoped confinement layer over the active layer, a second conductivity type cladding layer over the second undoped confinement layer, a second conductivity type barrier reduction layer over the second conductivity type cladding layer, and a second conductivity type cap layer over the second conductivity type barrier reduction layer; (ii) partially etching the second conductivity type cap layer, the second conductivity type barrier reduction layer and the second conductivity type cladding layer to a position near the second confinement layer to form a ridge waveguide; (iii) forming a photoresist layer to mask the ridge waveguide; (iv) removing the second conductivity type cap layer which is not covered by the photoresist layer, and then removing the photoresist layer; and (v) forming a metal oxide and a metal layer thereon.
Claim 3
Dependent Claim
26 words
A method as claimed in claim 1 wherein the carrier concentration at the surface of the ridge waveguide is higher than that at the inner portion.
Claim 4
Dependent Claim
21 words
A method as claimed in claim 1 wherein the first conductivity type is n-type and the second conductivity type is p-type.
Claim 5
Dependent Claim
21 words
A method as claimed in claim 1 wherein the first conductivity type is p-type and the second conductivity type is n-type.
Claim 6
Dependent Claim
19 words
A method as claimed in claim 3 wherein the semiconductor having a heavy carrier concentration is an oxide semiconductor.
Claim 7
Dependent Claim
19 words
A method as claimed in claim 4 wherein the semiconductor having a heavy carrier concentration is an oxide semiconductor.
Claim 8
Independent Claim
23 words
A method as claimed in claims 5 or 6 wherein the oxide semiconductor having a heavy carrier concentration is a single oxide layer.
Claim 9
Independent Claim
24 words
A method as claimed in claims 5 or 6 wherein the oxide semiconductor having a heavy carrier concentration includes a plurality of oxide layers.
Claim 10
Independent Claim
23 words
A method as claimed in claims 5 or 6 wherein the oxide semiconductor having a heavy carrier concentration is a mixed oxide semiconductor.
Claim 11
Independent Claim
45 words
A method as claimed in claims 5 or 6 wherein a nonoxide semiconductor is inserted between the oxide semiconductor having a heavy carrier concentration and the metal, the nonoxide semiconductor having a conductivity type the same as the oxide semiconductor having a heavy carrier concentration.
Claim 12
Dependent Claim
43 words
A method as claimed in claim 5 wherein the oxide semiconductor is one of ZnO, SnO 2 , In 2 O 3 , Tl 2 O 3 , CdO, TiO 2 , PbO, PbO 2 or a mixture or a solid solution thereof.
Claim 13
Dependent Claim
22 words
A method as claimed in claim 11 wherein an impurity is doped to the oxide semiconductor to increase the concentration of electrons.
Claim 14
Dependent Claim
57 words
A method as claimed in claim 6 wherein the oxide semiconductor is one of NiO, CoO, MnO, FeO, Fe 2 O 3 , CrO, Cr 2 O 3 , CrO 2 , PdO, CuO, CU 2 O, SnO, Ag 2 O, a mixture or a solid solution thereof, and CuAlO 2 and SrCu 2 O 2 .
Claim 15
Dependent Claim
22 words
A method as claimed in claim 13 wherein an impurity is doped to the oxide semiconductor to increase the concentration of holes.
Claim 16
Dependent Claim
14 words
A method as claimed in claim 5 wherein the oxide semiconductor is indium-tin oxide.
Claim 17
Dependent Claim
24 words
A method as claimed in claim 5 wherein the oxide semiconductor is ZnO doped with at least one of Ga, In, Al and Ce.
Claim 18
Dependent Claim
22 words
A method as claimed in claim 1 wherein the ridge waveguide semiconductor light-emitting device is a laser diode or a light-emitting diode.
Claim 19
Dependent Claim
19 words
A method as claimed in claim 1 wherein at least one ridge waveguide can be formed in step (ii).
Claim 20
Dependent Claim
19 words
A method as claimed in claim 1 wherein the metal includes at least one metal layer or alloy layer.
Claim 21
Dependent Claim
25 words
A method as claimed in claim 10 wherein the nonoxide semiconductor can be one of Si, Ge, GaAs, InP, GaP, ZnS, CdTe, PbS and ZnSe.
References Cited (Backward Citations)
US5556804A
Cited
US5898190A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-01-16 | 2004-07-17 | 2005-01-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-01-16 | 2008-07-17 | 2009-01-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-01-16 | 2012-07-17 | 2013-01-16 | $7700.00 | Window Closed / Lapsed |