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US6172385B1
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Multilayer ferroelectric capacitor structure
Assignee: International Business Machines Corp
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Filing: 1998-10-30
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Granted: 2001-01-09
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Expires: 2018-10-30
Abstract
Abstract Multilayer ferroelectric capacitor structures comprising a ferroelectric film having a combination of different ferroelectric materials or compositions such as strontium bismuth tantalate, strontium bismuth niobate, bismuth titanate, strontium bismuth tantalate niobate, lead zirconate titanate, lead lanthanum zirconate titanate are disclosed. A method of preparing the multilayer ferroelectric film containing at least two different ferroelectric materials and/or more than one composition of ferroelectric material is also disclosed.
Inventors
- 👤 Peter Richard Duncombe
- 👤 Robert Benjamin Laibowitz
- 👤 Deborah Ann Neumayer
- 👤 Katherine Lynn Saenger
- 👤 Thomas Mcarraoll Shaw
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:30
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/684; H10D1/01; H10D1/041; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/69398
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
44 words
A capacitive element comprising a substrate; a first electrode formed on said substrate; a multilayer ferroelectric film formed on said first electrode, said multilayer ferroelectric film is composed of more than one ferroelectric material; and a second electrode formed on said multilayer ferroelectric film.
Claim 2
Dependent Claim
44 words
A capacitive element comprising a substrate; a first electrode formed on said substrate; a multilayer ferroelectric film formed on said first electrode, said multilayer ferroelectric film is composed of more than one ferroelectric material; and a second electrode formed on said multilayer ferroelectric film.
Claim 3
Dependent Claim
15 words
The capacitive element of claim 1 wherein said substrate comprises a semiconducting material or wafer.
Claim 4
Dependent Claim
34 words
The capacitive element of claim 2 wherein said substrate further contains an insulator layer selected from the group consisting of oxides, nitrides, oxynitrides, high dielectric constant metal oxides, xerogels, combinations, multilayers and mixtures thereof.
Claim 5
Dependent Claim
35 words
The capacitive element of claim 2 wherein said semiconducting material or wafer is composed of a material selected from the group consisting of silicon (Si), Ge, SiGe, GaAs, InAs, InP and all other III/V compounds.
Claim 6
Dependent Claim
50 words
The capacitive element of claim 1 wherein said first and said second electrodes are composed of the same or different conductive materials and are selected from the group consisting of noble metals, alloys of noble metals, alloys of noble and non-noble metals, conductive oxides and combinations, multilayers or mixtures thereof.
Claim 7
Dependent Claim
19 words
The capacitive element of claim 5 wherein said first and second electrodes are composed of the same conductive materials.
Claim 8
Dependent Claim
39 words
The capacitive element of claim 1 wherein said ferroelectric material is a material selected from the group consisting of a perovskite-type oxide, a compound containing a pyrochlore structure, potassium dihydrogen phosphate and a phosphate of rubidium, cesium or arsenic.
Claim 9
Dependent Claim
64 words
The capacitive element of claim 1 wherein said ferroelectric material is a perovskite-type oxide having the formula ABO 3 wherein B is at least one acidic oxide containing a metal from Group IVB, VB, VIB, VIIB or IB of the Periodic Table of Elements, and A is at least one additional cation having a positive formula charge of from about 1 to about 3.
Claim 10
Dependent Claim
43 words
The capacitive element of claim 8 wherein said perovskite-type oxide is an oxide selected from the group consisting of a titanate-based ferroelectric, a manganate-based material, a cuprate-based material, a tungsten bronze-type niobate, tantalate or titanate, and a layered bismuth tantalate, niobate or titanate.
Claim 11
Dependent Claim
47 words
The capacitive element of claim 1 wherein said ferroelectric material is selected from the group consisting of bismuth titanate, strontium bismuth tantalate, strontium bismuth niobate, strontium bismuth tantalate niobate, lead zirconate titanate, lead lanthanum zirconate titanate and compositions of these materials modified by incorporation of a dopant.
Claim 12
Dependent Claim
54 words
The capacitive element of claim 1 wherein said multilayer ferroelectric film is composed of two different perovskite-type oxides selected from the group consisting of bismuth titanate, strontium bismuth tantalate, strontium bismuth niobate, strontium bismuth tantalate niobate, lead zirconate titanate, lead lanthanum zirconate titanate and compositions of these materials modified by incorporation of a dopant.
Claim 13
Dependent Claim
46 words
The capacitive element of claim 1 wherein said multilayer ferroelectric film is composed of two different perovskite-type oxides, said two different perovskite-type oxides comprising a first set of one or more strontium bismuth tantalate layers and a second set of one or more bismuth titanate layers.
Claim 14
Dependent Claim
14 words
A non-volatile storage device comprising at least the capacitive element of claim 1 .
Claim 15
Dependent Claim
13 words
A DRAM circuit comprising at least the capacitive element of claim 1 .
Claim 16
Dependent Claim
13 words
A FRAM circuit comprising at least the capacitive element of claim 1 .
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2004-01-09 | 2004-07-10 | 2005-01-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-01-09 | 2008-07-10 | 2009-01-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-01-09 | 2012-07-10 | 2013-01-09 | $7700.00 | Window Closed / Lapsed |