Abstract A plasma processing apparatus has a plurality of annular permanent magnets arranged concentrically of a polarity identical in the circumferential direction at the atmosphere side of a second electrode arranged opposite to a stage on which an object to be processed is placed. Arrangement is provided so that the polarity of magnets located adjacent radially is opposite. An insulation substrate is provided between a partition panel and a processing chamber to electrically insulate a plasma generation chamber. Direct current voltage is applied in a pulsive manner to the plasma generation chamber. Thus, a plasma processing apparatus can be provided that allows formation of plasma uniformly over a large area, and processing of a specimen of a large diameter uniformly.
A plasma processing apparatus comprising: a processing chamber having a first electrode on which an object to be processed is placed; a plasma generation chamber having a second electrode arranged opposite to said first electrode; and a partition panel provided between said processing chamber and said plasma generation chamber, and having a hole communicating from said plasma generation chamber to said processing chamber; wherein said plasma generation chamber is electrically insulated from said processing chamber, and a power source is adapted to provide a voltage in a pulsing manner to said plasma generation chamber.
Claim 2
Dependent Claim
94 words
A plasma processing apparatus comprising: a processing chamber having a first electrode on which an object to be processed is placed; a plasma generation chamber having a second electrode arranged opposite to said first electrode; and a partition panel provided between said processing chamber and said plasma generation chamber, and having a hole communicating from said plasma generation chamber to said processing chamber; wherein said plasma generation chamber is electrically insulated from said processing chamber, and a power source is adapted to provide a voltage in a pulsing manner to said plasma generation chamber.
Claim 3
Dependent Claim
28 words
The plasma processing apparatus according to claim 1 , wherein an insulation member is provided at a junction portion of said plasma generation chamber and said processing chamber.