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US6163221A
Expired / Lapsed
US
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High-frequency amplification device
Assignee: NEC Corp
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Filing: 1999-04-23
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Granted: 2000-12-19
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Expires: 2019-04-23
Abstract
Abstract A high-frequency amplification device having an active element and a matching circuit and a bias supplying circuit for the active element, wherein the active element has such a small resistance component of input impedance that gives a stability factor k of less than 1 for the active element itself at a frequency band that the high-frequency amplification device is used, and a loss of the matching circuit or bias supplying circuit or a loss of the matching circuit and bias supplying circuit is used to give a stability factor k of greater than 1 for the high-frequency amplification device.
Inventors
- 👤 Noriaki Matsuno
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-10 01:26
CPC Classifications
H; H03; H03F; H03F1/00; H03F1/08; H03F1/56; H03F3/00; H03F3/60; H03F3/601; H10; H10W; H10W44/00; H10W44/20; H10W44/226
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
79 words
A high-frequency amplification device, comprising: an active element; and a matching circuit for said active element; wherein said active element has such a small resistance component of input impedance that gives a stability factor k of less than 1 for the active element itself at a frequency band that said high-frequency amplification device is used, and a loss of said matching circuit is used to give a stability factor k of greater than 1 for said high-frequency amplification device.
Claim 2
Dependent Claim
79 words
A high-frequency amplification device, comprising: an active element; and a matching circuit for said active element; wherein said active element has such a small resistance component of input impedance that gives a stability factor k of less than 1 for the active element itself at a frequency band that said high-frequency amplification device is used, and a loss of said matching circuit is used to give a stability factor k of greater than 1 for said high-frequency amplification device.
Claim 3
Dependent Claim
24 words
A high-frequency amplification device, according to claim 1, wherein: said matching circuit is formed on the same substrate that said active element is formed.
Claim 4
Dependent Claim
62 words
A high-frequency amplification device, according to claim 1, wherein: said matching circuit includes any one element of a spiral inductor, a meander type inductor, a MIM (metal insulator metal) capacitor, a MIS (metal insulator semiconductor) capacitor and a stub, and a loss of said element is used to give a stability factor k of greater than 1 for said high-frequency amplification device.
Claim 5
Dependent Claim
62 words
A high-frequency amplification device, according to claim 2, wherein: said matching circuit includes any one element of a spiral inductor, a meander type inductor, a MIM (metal insulator metal) capacitor, a MIS (metal insulator semiconductor) capacitor and a stub, and a loss of said element is used to give a stability factor k of greater than 1 for said high-frequency amplification device.
Claim 6
Dependent Claim
81 words
A high-frequency amplification device, comprising: an active element; and a bias supplying circuit for said active element; wherein said active element has such a small resistance component of input impedance that gives a stability factor k of less than 1 for the active element itself at a frequency band that said high-frequency amplification device is used, and a loss of said bias supplying circuit is used to give a stability factor k of greater than 1 for said high-frequency amplification device.
Claim 7
Dependent Claim
81 words
A high-frequency amplification device, comprising: an active element; and a bias supplying circuit for said active element; wherein said active element has such a small resistance component of input impedance that gives a stability factor k of less than 1 for the active element itself at a frequency band that said high-frequency amplification device is used, and a loss of said bias supplying circuit is used to give a stability factor k of greater than 1 for said high-frequency amplification device.
Claim 8
Dependent Claim
25 words
A high-frequency amplification device, according to claim 5, wherein: said bias supplying circuit is formed on the same substrate that said active element is formed.
Claim 9
Dependent Claim
89 words
A high-frequency amplification device, comprising: an active element; and a matching circuit and a bias supplying circuit for said active element; wherein said active element has such a small resistance component of input impedance that gives a stability factor k of less than 1 for the active element itself at a frequency band that said high-frequency amplification device is used, and a loss of said matching circuit and said bias supplying circuit is used to give a stability factor k of greater than 1 for said high-frequency amplification device.
Claim 10
Dependent Claim
89 words
A high-frequency amplification device, comprising: an active element; and a matching circuit and a bias supplying circuit for said active element; wherein said active element has such a small resistance component of input impedance that gives a stability factor k of less than 1 for the active element itself at a frequency band that said high-frequency amplification device is used, and a loss of said matching circuit and said bias supplying circuit is used to give a stability factor k of greater than 1 for said high-frequency amplification device.
Claim 11
Dependent Claim
32 words
A high-frequency amplification device, according to claim 1, wherein: said active element is any one of a silicon MOSFET, a silicon bipolar transistor, a compound FET and a compound HBT (heterobipolar transistor).
Claim 12
Dependent Claim
30 words
A high-frequency amplification device, according to claim 2, wherein: said active element is any one of a silicon MOSFET, a silicon bipolar transistor, a compound FET and a compound HBT.
Claim 13
Dependent Claim
30 words
A high-frequency amplification device, according to claim 3, wherein: said active element is any one of a silicon MOSFET, a silicon bipolar transistor, a compound FET and a compound HBT.
Claim 14
Dependent Claim
30 words
A high-frequency amplification device, according to claim 4, wherein: said active element is any one of a silicon MOSFET, a silicon bipolar transistor, a compound FET and a compound HBT.
Claim 15
Dependent Claim
30 words
A high-frequency amplification device, according to claim 5, wherein: said active element is any one of a silicon MOSFET, a silicon bipolar transistor, a compound FET and a compound HBT.
Claim 16
Dependent Claim
30 words
A high-frequency amplification device, according to claim 6, wherein: said active element is any one of a silicon MOSFET, a silicon bipolar transistor, a compound FET and a compound HBT.
Claim 17
Dependent Claim
30 words
A high-frequency amplification device, according to claim 7, wherein: said active element is any one of a silicon MOSFET, a silicon bipolar transistor, a compound FET and a compound HBT.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2003-12-19 | 2004-06-19 | 2004-12-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-12-19 | 2008-06-19 | 2008-12-19 | $3760.00 | Window Closed / Lapsed |
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