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US6156672A
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Method of forming dielectric thin film pattern and method of forming laminate pattern comprising dielectric thin film and conductive thin film
Assignee: Murata Manufacturing Co Ltd
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Filing: 1999-11-19
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Granted: 2000-12-05
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Expires: 2019-11-19
Abstract
Abstract A method of forming a dielectric thin film pattern, comprises the steps of: depositing a dielectric thin film on a substrate having a resist pattern thereon by a vapor deposition method, wherein as a material for the dielectric thin film, at least one of CeO 2 , Sm 2 O 3 , Dy 2 O 3 , Y 2 O 3 , TiO 2 , Al 2 O 3 , and MgO is used; and removing the resist pattern whereby the dielectric thin film is patterned.
Inventors
- 👤 Yoshihiro Koshido
- 👤 Kei Fujibayashi
- 👤 Yuji Toyota
- 👤 Tadayuki Okawa
- 👤 Ryoichiro Takahashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:49
CPC Classifications
H; H10; H10P; H10P76/00; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69396; H10D; H10D1/00; H10D1/60; H10D1/68; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/66; H10P14/662; H10P14/69391; H10P14/69394; H10P76/20; H10P76/202; H05; H05K; H05K1/00; H05K1/02; H05K1/0213; H05K1/0237; H05K1/024; H05K3/00; H05K3/02; H05K3/04; H05K3/046; H05K3/048; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948; Y10S438/951
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
90 words
A method of forming a dielectric thin film pattern, comprising the acts of: depositing a dielectric thin film on a substrate having a resist pattern thereon by a vapor deposition method, wherein at least one of CeO 2 , Sm 2 O 3 , Dy 2 O 3 , Y 2 O 3 , TiO 2 , Al 2 O 3 , and MgO is used as a material for the dielectric thin film; and removing the resist pattern whereby a patterned dielectric thin film is formed on the substrate.
Claim 2
Independent Claim
90 words
A method of forming a dielectric thin film pattern, comprising the acts of: depositing a dielectric thin film on a substrate having a resist pattern thereon by a vapor deposition method, wherein at least one of CeO 2 , Sm 2 O 3 , Dy 2 O 3 , Y 2 O 3 , TiO 2 , Al 2 O 3 , and MgO is used as a material for the dielectric thin film; and removing the resist pattern whereby a patterned dielectric thin film is formed on the substrate.
Claim 3
Dependent Claim
39 words
A method of forming a dielectric thin film pattern according to claim 1, wherein the temperature of the substrate employed during the deposition of the dielectric thin film by the vapor deposition method is not more than 150° C.
Claim 4
Dependent Claim
35 words
A method of forming a dielectric thin film pattern according to claim 1, further comprising the step of subjecting the patterned dielectric thin film to heat treatment at a temperature of 150° C. or more.
Claim 5
Independent Claim
99 words
A method of forming a laminate pattern comprising the steps of: sequentially depositing a dielectric thin film and a conductive thin film on the substrate having a resist pattern thereon by a vapor deposition method, wherein at least one of CeO 2 , Sm 2 O 3 , Dy 2 O 3 , Y 2 O 3 , TiO 2 , Al 2 O 3 , and MgO is used as a material for the dielectric thin film; and removing the resist pattern whereby the laminate pattern comprising the dielectric thin film and the conductor thin film is produced.
Claim 6
Independent Claim
99 words
A method of forming a laminate pattern comprising the steps of: sequentially depositing a dielectric thin film and a conductive thin film on the substrate having a resist pattern thereon by a vapor deposition method, wherein at least one of CeO 2 , Sm 2 O 3 , Dy 2 O 3 , Y 2 O 3 , TiO 2 , Al 2 O 3 , and MgO is used as a material for the dielectric thin film; and removing the resist pattern whereby the laminate pattern comprising the dielectric thin film and the conductor thin film is produced.
Claim 7
Dependent Claim
39 words
A method of forming a dielectric thin film pattern according to claim 4, wherein the temperature of the substrate employed during the deposition of the dielectric thin film by the vapor deposition method is not more than 150° C.
Claim 8
Dependent Claim
33 words
A method of forming a dielectric thin film pattern according to claim 4, further comprising the step of subjecting the laminate pattern to heat treatment at a temperature of 150° C. or more.
References Cited (Backward Citations)
US5190892A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-12-05 | 2004-06-05 | 2004-12-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-12-05 | 2008-06-05 | 2008-12-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-12-05 | 2012-06-05 | 2012-12-05 | $7700.00 | Window Closed / Lapsed |