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US6153522A
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Semiconductor device manufacturing method
Assignee: Fujitsu Semiconductor Ltd
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Filing: 1998-10-28
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Granted: 2000-11-28
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Expires: 2018-10-28
Abstract
Abstract A semiconductor device manufacturing method of the present invention comprises the steps of forming a groove on an insulating film formed over a semiconductor substrate, forming a first copper film on the insulating film and in the groove by sputtering using a target, reflowing the first copper film by heating it, growing a second copper film on the first copper film by plating or chemical vapor deposition, and removing the second copper film and the first copper film on the insulating film by chemical mechanical polishing to remain at least the first copper film in the groove. Accordingly, in the semiconductor device manufacturing method to provide copper wirings, increase in resistance can be suppressed by firmly embedding copper into the groove and also electromigration resistance of copper wirings can be improved.
Inventors
- 👤 Hideo Takagi
- 👤 Shigetaka Uji
- 👤 Shyoji Hirao
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 16:30
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/062; H10W20/056; H10W20/059
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
95 words
A method of manufacturing a semiconductor device comprising the steps of: forming a groove in an insulating film formed over a semiconductor substrate; forming a first copper film on the insulating film and in the groove by sputtering using a target; reflowing the first copper film by heating it; forming a second copper film on the first copper film by plating or chemical vapor deposition; and removing the second copper film and the first copper film on the insulating film by chemical mechanical polishing to remain at least the first copper film in the groove.
Claim 2
Independent Claim
95 words
A method of manufacturing a semiconductor device comprising the steps of: forming a groove in an insulating film formed over a semiconductor substrate; forming a first copper film on the insulating film and in the groove by sputtering using a target; reflowing the first copper film by heating it; forming a second copper film on the first copper film by plating or chemical vapor deposition; and removing the second copper film and the first copper film on the insulating film by chemical mechanical polishing to remain at least the first copper film in the groove.
Claim 3
Dependent Claim
32 words
A method of manufacturing a semiconductor device according to claim 1, wherein the step of reflowing the first copper film is executed at a substrate temperature of 350° C. to 450° C.
Claim 4
Dependent Claim
25 words
A method of manufacturing a semiconductor device according to claim 2, wherein the step of reflowing the first copper film is excuted in hydrogen atmosphere.
Claim 5
Dependent Claim
32 words
A method of manufacturing a semiconductor device according to claim 1, before forming the first copper film, forming a barrier metal film on the insulating film and an innerface of the groove.
Claim 6
Dependent Claim
22 words
A method of manufacturing a semiconductor device according to claim 4, the barrier metal film is made of the refractory metal compound.
Claim 7
Dependent Claim
68 words
A method of manufacturing a semiconductor device according to claim 1, wherein the first copper film is formed by a sputtering equipment having a high base degree of vacuum in which an achievable degree of vacuum is less than 2×10 -7 Torr, and is grown at atmosphere of less than 5 mTorr while setting a distance between the target and the semiconductor substrate to more than 100 mm.
Claim 8
Dependent Claim
44 words
A method of manufacturing a semiconductor device according to claim 3, wherein the first copper film is formed by changing a substrate temperature into two levels of less than 200° C. in a first step and more than 350° C. in a second step.
Claim 9
Dependent Claim
51 words
A method of manufacturing a semiconductor device according to claim 1, wherein an upper surface of the first copper film formed in the groove is positioned at a higher location than an upper surface of the insulating film immediately after the first copper film is formed or after the reflowing step.
Claim 10
Dependent Claim
55 words
A method of manufacturing a semiconductor device according to claim 1, wherein a lowest area of an upper surface of the first copper film in the groove is positioned at a higher location than a half of a depth of the groove immediately after the first copper film forming step or after the reflowing step.
Claim 11
Dependent Claim
59 words
A method of manufacturing a semiconductor device according to claim 1, wherein a rate of a cross section of the first copper film occupied in the groove to a cross section of the groove is larger than a half of the cross section of the groove immediately after the first copper film is formed or after the reflowing step.
Claim 12
Dependent Claim
45 words
A method of manufacturing a semiconductor device according to claim 1, wherein the semiconductor substrate is placed in a low pressure atmosphere without exposure to an atmosphere between the step of reflowing the first copper film and the step of forming the second copper film.
Claim 13
Dependent Claim
44 words
A method of manufacturing a semiconductor device according to claim 1, wherein an upper surface of the first copper film in the groove is positioned at a higher location than an upper surface of the insulating film after the first copper film is formed.
Claim 14
Independent Claim
114 words
A method of manufacturing a semiconductor device comprising the steps of: forming a groove in an insulating film formed over a semiconductor substrate; forming a first copper film on the insulating film and in the groove by sputtering using a target, the first copper film having an upper surface in which a lowest area is positioned at a higher location than a half of depth of the groove; forming a second copper film on the first copper film by plating or chemical vapor deposition; and removing the second copper film and the first copper film on the insulating film by chemical mechanical polishing to remain at least the first copper film in the groove.
Claim 15
Independent Claim
114 words
A method of manufacturing a semiconductor device comprising the steps of: forming a groove in an insulating film formed over a semiconductor substrate; forming a first copper film on the insulating film and in the groove by sputtering using a target, the first copper film having an upper surface in which a lowest area is positioned at a higher location than a half of depth of the groove; forming a second copper film on the first copper film by plating or chemical vapor deposition; and removing the second copper film and the first copper film on the insulating film by chemical mechanical polishing to remain at least the first copper film in the groove.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-11-28 | 2004-05-29 | 2004-11-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-11-28 | 2008-05-29 | 2008-11-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-11-28 | 2012-05-29 | 2012-11-28 | $7700.00 | Window Closed / Lapsed |