US6150183A
Expired / Lapsed
US
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Method for manufacturing metal oxide capacitor and method for manufacturing semiconductor memory device
Assignee: Texas Instruments Inc
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Filing: 1997-12-18
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Granted: 2000-11-21
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Expires: 2017-12-18
Abstract
Abstract A metal oxide capacitor is manufactured by sequentially laminating a metal oxide film and a secon electrode on a first electrode. The metal oxide film is formed and then heat-treated in an atmosphere with an oxygen pressure higher than 1 atm.
Inventors
- 👤 Yukio Fukuda
- 👤 Katsuhiro Aoki
- 👤 Akitoshi Nishimura
- 👤 Ken Numata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:33
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/69398; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6329; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
53 words
A method for manufacturing a metal oxide capacitor comprising in manufacturing a metal oxide capacitor in which a metal oxide film and a second electrode are sequentially laminated on a first electrode, the above-mentioned metal oxide film is formed and then heat-treated in an atmosphere with an oxygen pressure higher than 1 atm.
Claim 2
Independent Claim
53 words
A method for manufacturing a metal oxide capacitor comprising in manufacturing a metal oxide capacitor in which a metal oxide film and a second electrode are sequentially laminated on a first electrode, the above-mentioned metal oxide film is formed and then heat-treated in an atmosphere with an oxygen pressure higher than 1 atm.
Claim 3
Dependent Claim
26 words
The method of claim 1, wherein a postannealing as the above-mentioned heat treatment is carried out in an atmosphere with an oxygen pressure of 2-100 atm.
Claim 4
Dependent Claim
18 words
The method of claim 1, wherein the above-mentioned heat treatment is carried out at 550° C. or lower.
Claim 5
Dependent Claim
46 words
The method of claim 1, wherein the the above-mentioned first electrode on a barrier metal, forms the above-mentioned metal oxide film in an oxygen atmosphere on the first electrode, forms the above-mentioned second electrode on the metal oxide film, and carries out the above-mentioned heat treatment.
Claim 6
Independent Claim
76 words
A method of manufacturing a microelectronic capacitor comprising: a. forming a first capacitor electrode over a semiconductor substrate; b. applying a metal oxide film to the first electrode; c. forming a second electrode over the metal oxide film to form a capacitor; and d. heat treating the metal oxide film subsequent to forming the second electrode in an atmosphere of oxygen with a pressure higher than 1 atm and at a temperature less than 600° C.
Claim 7
Independent Claim
76 words
A method of manufacturing a microelectronic capacitor comprising: a. forming a first capacitor electrode over a semiconductor substrate; b. applying a metal oxide film to the first electrode; c. forming a second electrode over the metal oxide film to form a capacitor; and d. heat treating the metal oxide film subsequent to forming the second electrode in an atmosphere of oxygen with a pressure higher than 1 atm and at a temperature less than 600° C.
Claim 8
Dependent Claim
17 words
The method of claim 5 wherein the heat treating is performed with a pressure of 2-100 atm.
Claim 9
Dependent Claim
15 words
The method of claim 5 wherein the heat treating is performed below about 550° C.
Claim 10
Dependent Claim
51 words
The method of claim 5 wherein the first electrode is formed on a barrier metal comprising a metal nitride, the second electrode is a noble metal and the metal oxide film comprises materials chosen from the following: (Ba, Sr)TiO 3 , Pb(Zr, Ti)O 3 , and Ta 2 O 5 .
Claim 11
Independent Claim
81 words
A method of manufacturing a microelectronic capacitor for a semiconductor memory element comprising: a. forming a first capacitor electrode over a semiconductor substrate; b. applying a metal oxide film to the first electrode; c. forming a second electrode over the metal oxide film to form a capacitor; and d. heat treating the metal oxide film subsequent to forming the second electrode in an atmosphere of oxygen with a pressure higher than 1 atm and at a temperature below about 550° C.
Claim 12
Independent Claim
81 words
A method of manufacturing a microelectronic capacitor for a semiconductor memory element comprising: a. forming a first capacitor electrode over a semiconductor substrate; b. applying a metal oxide film to the first electrode; c. forming a second electrode over the metal oxide film to form a capacitor; and d. heat treating the metal oxide film subsequent to forming the second electrode in an atmosphere of oxygen with a pressure higher than 1 atm and at a temperature below about 550° C.
Claim 13
Dependent Claim
18 words
The method of claim 9 wherein the heat treating is performed with a pressure of about 2-10 atm.
Claim 14
Dependent Claim
19 words
The method of claim 10 wherein the first electrode is formed on a barrier metal comprising a metal nitride.
Claim 15
Dependent Claim
31 words
The method of claim 11 wherein and the metal oxide film comprises materials chosen from the following: (Ba, Sr)TiO 3 , Pb(Zr, Ti)O 3 , and Ta 2 O 5 .
Claim 16
Dependent Claim
31 words
The method of claim 9 wherein and the metal oxide film comprises materials chosen from the following: (Ba, Sr)TiO 3 , Pb(Zr, Ti)O 3 , and Ta 2 O 5 .
Claim 17
Dependent Claim
17 words
The method of claim 9 wherein the heat treating is performed at a temperature about 350° C.
References Cited (Backward Citations)
US5443030A
Cited
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