Abstract The present invention provides a resin-encapsulated semiconductor apparatus comprising a semiconductor device having a ferroelectric film and a surface-protective film, and an encapsulant member comprising a resin; the surface-protective film being formed of a polyimide. The present invention also provides a process for fabricating a resin-encapsulated semiconductor apparatus, comprising the steps of forming a film of a polyimide precursor composition on the surface of a semiconductor device having a ferroelectric film; heat-curing the polyimide precursor composition film to form a surface-protective film formed of a polyimide; and encapsulating, with an encapsulant resin, the semiconductor device on which the surface-protective film has been formed. The polyimide may preferably have a glass transition temperature of from 240° C. to 400° C. and a Young's modulus of from 2,600 MPa to 6 GPa. The curing may preferably be carried out at a temperature of from 230° C. to 300° C.
A resin-encapsulated semiconductor apparatus comprising a semiconductor device having a ferroelectric film and a surface-protective film, and a encapsulant member comprising a resin; said surface-protective film being formed of a polyimide.
Claim 2
Dependent Claim
31 words
A resin-encapsulated semiconductor apparatus comprising a semiconductor device having a ferroelectric film and a surface-protective film, and a encapsulant member comprising a resin; said surface-protective film being formed of a polyimide.
Claim 3
Dependent Claim
34 words
The resin-encapsulated semiconductor apparatus according to claim 1, wherein said polyimide has a glass transition temperature of from 240° C. to 400° C. and a Young's modulus of from 2,600 MPa to 6 GPa.
Claim 4
Dependent Claim
20 words
The resin-encapsulated semiconductor apparatus according to claim 1, wherein said ferroelectric film is a capacity insulation film of a capacitor.
Claim 5
Dependent Claim
32 words
The resin-encapsulated semiconductor apparatus according to claim 1, wherein said polyimide is obtained by heating a polyimide precursor composition at a temperature of 230° C. or above and 300° C. or below.
Claim 6
Dependent Claim
59 words
The resin-encapsulated semiconductor apparatus according to claim 1, wherein said polyimide; is obtained by heating a polyimide precursor composition at a temperature of higher than 300° C. and 350° C. or below for a time shorter than 4 minutes; and has a Young's modulus of 3,500 MPa or above and a glass transition temperature of 260° C. or above.