US6136657A
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Method for fabricating a semiconductor device having different gate oxide layers
Assignee: Samsung Electronics Co Ltd
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Filing: 1999-05-20
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Granted: 2000-10-24
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Expires: 2019-05-20
Abstract
Abstract A method for fabricating a semiconductor device with different gate oxide layers is provided. In this method, oxidation is controlled in accordance with the active area dimension so that the oxide grows more thinly at a wider active width in a peripheral region, and grows more thickly at a narrower active width in a cell array region. In this method, a gate pattern is formed over a semiconductor substrate having different active areas. Gate spacer are formed and an active-dimension-dependant oxidation process is then performed to grow oxide layers of different thicknesses in the cell array region and the peripheral region.
Inventors
- 👤 Won-suk Yang
- 👤 Chang-hyun Cho
- 👤 Ki-nam Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 13:55
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D64/511; H10D64/514; H10D64/516; H10D64/01; H10D64/011; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0144; H10D84/02; H10D84/03; H10D84/038; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/05; H10B12/09; H10D64/01346; Y; Y10; Y10S; Y10S438/00; Y10S438/981
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
177 words
A method for fabricating a semiconductor device, comprising: providing a semiconductor substrate having a first region and a second region; forming a device isolating layer over both the first region and the second region of the semiconductor substrate to define a first active region in the first region and a second active region in the second region, the second active region being wider than the first active region; forming a gate oxide layer over the first and second active regions of the semiconductor substrate; forming a patterned gate electrode over the gate oxide layer; performing a dry oxidation to grow a first oxide layer over a portion of the semiconductor substrate not covered by the patterned gate electrode; partially etching the first oxide layer such that the portion of the first oxide layer over the semiconductor substrate and not covered by the patterned gate electrode is thinner than the gate oxide layer; and performing a wet oxidation to grow a patterned oxide layer that is thicker in the first region than it is in the second region.
Claim 2
Independent Claim
177 words
A method for fabricating a semiconductor device, comprising: providing a semiconductor substrate having a first region and a second region; forming a device isolating layer over both the first region and the second region of the semiconductor substrate to define a first active region in the first region and a second active region in the second region, the second active region being wider than the first active region; forming a gate oxide layer over the first and second active regions of the semiconductor substrate; forming a patterned gate electrode over the gate oxide layer; performing a dry oxidation to grow a first oxide layer over a portion of the semiconductor substrate not covered by the patterned gate electrode; partially etching the first oxide layer such that the portion of the first oxide layer over the semiconductor substrate and not covered by the patterned gate electrode is thinner than the gate oxide layer; and performing a wet oxidation to grow a patterned oxide layer that is thicker in the first region than it is in the second region.
Claim 3
Dependent Claim
37 words
A method for fabricating a semiconductor device, as recited in claim 1, farther comprising forming insulating spacers on sidewalls of the patterned gate electrode after partially etching the first oxide layer, but before performing a wet oxidation.
Claim 4
Dependent Claim
20 words
A method for fabricating a semiconductor device, as recited in claim 2, wherein the insulating spacers comprise an oxide layer.
Claim 5
Dependent Claim
37 words
A method for fabricating a semiconductor device, as recited in claim 1, wherein the first region is a cell array region of a memory device and the second region is a peripheral region of the memory device.
Claim 6
Dependent Claim
35 words
A method for fabricating a semiconductor device, as recited in claim 1, wherein the second active region has a second width at least two times as wide as a first width of the first region.
Claim 7
Dependent Claim
29 words
A method for fabricating a semiconductor device, as recited in claim 5, wherein the first width is 0.2 μm or less, the second width is 0.4 μm or more.
Claim 8
Dependent Claim
32 words
A method for fabricating a semiconductor device, as recited in claim 1, wherein the step of partially etching the first oxide layer is carried out by either dry etching or wet etching.
Claim 9
Dependent Claim
33 words
A method for fabricating a semiconductor device, as recited in claim 1, wherein the step of wet oxidation is performed at a temperature in the range of about 700° C. to 850° C.
Claim 10
Dependent Claim
31 words
A method for fabricating a semiconductor device, as recited in claim 1, wherein the patterned oxide layer is 30% thinner in the second region than it is in the first region.
Claim 11
Dependent Claim
32 words
A method for fabricating a semiconductor device, as recited in claim 1, wherein the first region is supplied with a first voltage higher than a second voltage applied to the second region.
Claim 12
Dependent Claim
33 words
A method for fabricating a semiconductor device, as recited in claim 1, wherein the performing of a dry oxidation also grow the first oxide layer on both sidewalls of the patterned gate electrode.
References Cited (Backward Citations)
US5937310A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2003-10-24 | 2004-04-24 | 2004-10-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-10-24 | 2008-04-24 | 2008-10-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-10-24 | 2012-04-24 | 2012-10-24 | $7700.00 | Window Closed / Lapsed |