US6130166A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Alternative plasma chemistry for enhanced photoresist removal
Assignee: United Microelectronics Corp
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Filing: 1999-02-01
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Granted: 2000-10-10
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Expires: 2019-02-01
Abstract
Abstract A CF 4 /H 2 O 2 plasma is used to remove residues remaining after an ashing step. On a substrate, a layer of photoresist is formed over an underlying layer. The layer of photoresist is developed to form a photoresist pattern. The underlying layer is etched using the photoresist pattern. The substrate, including exposed areas of the underlying layer, are subjected to a plasma comprising H 2 O 2 vapor and a gaseous fluorocarbon to remove residual polymers.
Inventors
- 👤 Edward Yeh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 08:43
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/20; H10P70/23; H10P70/234; G; G03; G03F; G03F7/00; G03F7/26; G03F7/42; G03F7/427; H10P50/00; H10P50/20; H10P50/28; H10P50/286; H10P50/287; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/10; H10W10/17
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
77 words
A method for use when processing integrated circuitry comprising the following steps: (a) on a substrate, forming a layer of photoresist over an underlying layer; (b) developing the layer of photoresist to form a photoresist pattern; (c) etching the underlying layer using the photoresist pattern; and, (d) subjecting the substrate including exposed portions of the underlying layer to a plasma comprising hydrogen peroxide (H 2 O 2 ) vapor and a gaseous fluorocarbon to remove residual polymers.
Claim 2
Independent Claim
77 words
A method for use when processing integrated circuitry comprising the following steps: (a) on a substrate, forming a layer of photoresist over an underlying layer; (b) developing the layer of photoresist to form a photoresist pattern; (c) etching the underlying layer using the photoresist pattern; and, (d) subjecting the substrate including exposed portions of the underlying layer to a plasma comprising hydrogen peroxide (H 2 O 2 ) vapor and a gaseous fluorocarbon to remove residual polymers.
Claim 3
Dependent Claim
33 words
A method as in claim 1 wherein step (d) comprises the steps of: (d.1) introducing CF 4 into an ashing environment; and, (d.2) introducing H 2 O 2 vapor into the ashing environment.
Claim 4
Dependent Claim
17 words
A method as in claim 1, wherein in step (d) the gaseous fluorocarbon is CF 4 .
Claim 5
Dependent Claim
24 words
A method as in claim 1, wherein in step (d) the plasma comprises another oxygenated species in addition to H 2 O 2 vapor.
Claim 6
Dependent Claim
18 words
A method as in claim 4, wherein in step (d) the other oxygenated species is O 2 .
Claim 7
Dependent Claim
18 words
A method as in claim 4 wherein in step (d), the other oxygenated species is H 2 O.
Claim 8
Dependent Claim
29 words
A method as in claim 1, wherein in step (d) the plasma does not include significant amounts of an oxygenated species in addition to H 2 O 2 vapor.
Claim 9
Independent Claim
87 words
A method for forming an isolation structure on an integrated circuit using shallow trench isolation comprising the following steps: (a) forming a nitride mask to define a trench area on a substrate of the integrated circuit; (b) subjecting the substrate including the trench area to a plasma comprising hydrogen peroxide (H 2 O 2 ) vapor, and one of a gaseous fluorocarbon or a fluorinated hydrocarbon gas to clean impurities on the trench area; and, (c) etching the substrate to form a trench within the trench area.
Claim 10
Independent Claim
87 words
A method for forming an isolation structure on an integrated circuit using shallow trench isolation comprising the following steps: (a) forming a nitride mask to define a trench area on a substrate of the integrated circuit; (b) subjecting the substrate including the trench area to a plasma comprising hydrogen peroxide (H 2 O 2 ) vapor, and one of a gaseous fluorocarbon or a fluorinated hydrocarbon gas to clean impurities on the trench area; and, (c) etching the substrate to form a trench within the trench area.
Claim 11
Dependent Claim
17 words
A method as in claim 8, wherein in step (b) the gaseous fluorocarbon is CF 4 .
Claim 12
Dependent Claim
24 words
A method as in claim 8, wherein in step (b) the plasma comprises another oxygenated species in addition to H 2 O 2 vapor.
Claim 13
Dependent Claim
18 words
A method as in claim 10, wherein in step (b) the other oxygenated species is O 2 .
Claim 14
Dependent Claim
18 words
A method as in claim 10, wherein in step (b), the other oxygenated species is H 2 O.
Claim 15
Dependent Claim
41 words
A method as in claim 8 additionally comprising the following step: (d) subjecting the trench to a plasma comprising H 2 O 2 vapor, and one of a gaseous fluorocarbon or a fluorinated hydrocarbon gas to clean impurities within the trench.
Claim 16
Independent Claim
89 words
A method for forming a via contact hole in a semiconductor device comprising the following steps: (a) forming a metal layer on a wafer; (b) forming a dielectric layer on the metal layer; (c) forming a photoresist layer on the dielectric layer; (d) patterning the photoresist layer; (e) forming a via contact hole by an etching process which uses the photoresist as a pattern; and, (f) subjecting the substrate to a plasma comprising hydrogen peroxide (H 2 O 2 ) vapor and a gaseous fluorocarbon to remove residual polymers.
Claim 17
Independent Claim
89 words
A method for forming a via contact hole in a semiconductor device comprising the following steps: (a) forming a metal layer on a wafer; (b) forming a dielectric layer on the metal layer; (c) forming a photoresist layer on the dielectric layer; (d) patterning the photoresist layer; (e) forming a via contact hole by an etching process which uses the photoresist as a pattern; and, (f) subjecting the substrate to a plasma comprising hydrogen peroxide (H 2 O 2 ) vapor and a gaseous fluorocarbon to remove residual polymers.
Claim 18
Dependent Claim
33 words
A method as in claim 14 wherein step (f) comprises the steps of: (f.1) introducing CF 4 into an ashing environment; and, (f.2) introducing H 2 O 2 vapor into the ashing environment.
Claim 19
Dependent Claim
17 words
A method as in claim 14, wherein in step (f) the gaseous fluorocarbon is CF 4 .
Claim 20
Dependent Claim
24 words
A method as in claim 14, wherein in step (f) the plasma comprises another oxygenated species in addition to H 2 O 2 vapor.
Claim 21
Dependent Claim
25 words
A method as in claim 17, wherein in step (f), the other oxygenated species includes one of the following: O 2 , H 2 O.
Claim 22
Dependent Claim
29 words
A method as in claim 14, wherein in step (f) the plasma does not include significant amounts of an oxygenated species in addition to H 2 O 2 vapor.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2003-10-10 | 2004-04-10 | 2004-10-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-10-10 | 2008-04-10 | 2008-10-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-10-10 | 2012-04-10 | 2012-10-10 | $7700.00 | Window Closed / Lapsed |