Abstract A semiconductor device includes a gate electrode (4) formed of a conductive material on a semiconductor substrate (1) of one conductivity type with a gate insulating film (3) therebetween; first and second diffusion regions (5, 10) of another conductivity type formed on the semiconductor substrate (1) so as to sandwich the gate electrode (4); and a contact hole (17) for electrically connecting one (first) (10) of the first and second diffusion regions (5, 10) to a lower electrode (8) of a cell capacitor for storing charge therein, and has a characteristic that when a reverse voltage Vrev is applied as a junction application voltage between semiconductors of different conductivity types of the first diffusion region (10) and the semiconductor substrate (1) (positive potential is applied to the n-type semiconductor side and zero or negative potential, to the p-type semiconductor side), a leakage current Ileak flows between the first diffusion region (10) and the semiconductor substrate (1), and the junction application voltage Vrev when the leakage current Ileak is Ileak=Cs×(Vbit/2)×(1/T)×(1/S) (where a charge storage capacitance in the cell capacitor is Cs, a voltage applied to a data line (12) connected to the other (second) (5) of the first and second diffusion regions (5, 10) is Vbit, a target charge retention time is T and an area of the first diffusion region (10) is S) is three times or higher than the voltage Vbit applied to the data line (12) at room temperature.
A semiconductor device comprising: a gate electrode formed of a conductive material on a semiconductor substrate of one conductivity type with a gate insulating film therebetween; first and second diffusion regions of another conductivity type formed on said semiconductor substrate so as to sandwich said gate electrode; and a contact hole for electrically connecting one of said first and second diffusion regions to a lower electrode of a cell capacitor for storing charge therein, wherein said semiconductor device has a characteristic that when a reverse voltage Vrev is applied as a junction application voltage between semiconductors of different conductivity types of said first diffusion region and said semiconductor substrate, a leakage current Ileak flows between said first diffusion region and said semiconductor substrate, and said junction application voltage Vrev when the leakage current Ileak is Ileak=Cs×(Vbit/2)×(1/T)×(1/S), is three times or higher than a voltage Vbit applied to a data line connected to the other of said first and second diffusion regions at room temperature.
Claim 2
Dependent Claim
164 words
A semiconductor device comprising: a gate electrode formed of a conductive material on a semiconductor substrate of one conductivity type with a gate insulating film therebetween; first and second diffusion regions of another conductivity type formed on said semiconductor substrate so as to sandwich said gate electrode; and a contact hole for electrically connecting one of said first and second diffusion regions to a lower electrode of a cell capacitor for storing charge therein, wherein said semiconductor device has a characteristic that when a reverse voltage Vrev is applied as a junction application voltage between semiconductors of different conductivity types of said first diffusion region and said semiconductor substrate, a leakage current Ileak flows between said first diffusion region and said semiconductor substrate, and said junction application voltage Vrev when the leakage current Ileak is Ileak=Cs×(Vbit/2)×(1/T)×(1/S), is three times or higher than a voltage Vbit applied to a data line connected to the other of said first and second diffusion regions at room temperature.
Claim 3
Dependent Claim
47 words
A semiconductor device according to claim 1, wherein in dry etching in forming said contact hole, a damaged layer generated in said first diffusion region connected to said lower electrode of said capacitor is covered with a region having an impurity concentration of 1E18/cm 3 or higher.