US6121141A
Expired / Lapsed
US
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Method of forming a void free copper interconnects
Assignee: GlobalFoundries Inc
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Filing: 1998-11-24
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Granted: 2000-09-19
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Expires: 2018-11-24
Abstract
Abstract Void free Cu or Cu alloy interconnects are formed by annealing at superatmospheric pressure after metallization. Embodiments include filling a damascene opening in a dielectric layer with Cu or a Cu alloy and heat treating in a chamber at a pressure of about 2 atmospheres to about 750 atmospheres.
Inventors
- 👤 Christy Mei-Chu Woo
- 👤 Dirk Brown
- 👤 Young-Chang Joo
- 👤 Imran Hashim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 06:58
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/059
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
83 words
A method of forming a copper (Cu) or Cu alloy interconnection of an integrated circuit in a semiconductor device comprising a semiconductor substrate with an active region and a plurality of sequentially formed dielectric layers and conductive patterns, the interconnection electrically connecting conductive patterns on different layers or establishing electrical contact with the active region on the semiconductor substrate, the method comprising: depositing Cu or Cu alloy; and heat treating the deposited Cu or Cu alloy while applying a pressure above atmospheric pressure.
Claim 2
Independent Claim
83 words
A method of forming a copper (Cu) or Cu alloy interconnection of an integrated circuit in a semiconductor device comprising a semiconductor substrate with an active region and a plurality of sequentially formed dielectric layers and conductive patterns, the interconnection electrically connecting conductive patterns on different layers or establishing electrical contact with the active region on the semiconductor substrate, the method comprising: depositing Cu or Cu alloy; and heat treating the deposited Cu or Cu alloy while applying a pressure above atmospheric pressure.
Claim 3
Dependent Claim
22 words
The method according to claim 1, comprising depositing the Cu or Cu alloy layer in an opening formed in a dielectric layer.
Claim 4
Dependent Claim
25 words
The method according to claim 2, comprising heat treating in a chamber at a pressure of greater than about 2 atmosphere to about 750 atmospheres.
Claim 5
Dependent Claim
23 words
The method according to claim 3, comprising heat treating in a chamber at a pressure of about 2 atmospheres to about 30 atmospheres.
Claim 6
Dependent Claim
23 words
The method according to claim 4, comprising heat treating in a chamber at a pressure of about 2 atmospheres to about 5 atmospheres.
Claim 7
Dependent Claim
15 words
The method according to claim 2, further comprising planarizing the deposited Cu or Cu alloy.
Claim 8
Dependent Claim
12 words
The method according to claim 6, comprising planarizing by chemical mechanical polishing.
Claim 9
Dependent Claim
13 words
The method according to claim 2, comprising heat treating in an inert atmosphere.
Claim 10
Dependent Claim
19 words
The method according to claim 2, comprising heat treating at a temperature of about 80° C. to 400° C.
Claim 11
Dependent Claim
24 words
The method according to claim 2, comprising depositing the Cu or Cu alloy by physical vapor deposition, chemical vapor deposition, electroplating or electroless plating.
Claim 12
Dependent Claim
22 words
The method according to claim 2, comprising depositing a barrier layer in the opening before depositing the Cu or Cu alloy layer.
Claim 13
Independent Claim
62 words
A method of manufacturing a semiconductor device, the method comprising: depositing a copper (Cu) or a Cu alloy to fill an opening formed in a dielectric layer such that the deposited Cu or Cu alloy extends above the opening; heat treating the deposited Cu or Cu alloy while applying a pressure above atmospheric pressure; and planarizing the deposited Cu or Cu alloy.
Claim 14
Independent Claim
62 words
A method of manufacturing a semiconductor device, the method comprising: depositing a copper (Cu) or a Cu alloy to fill an opening formed in a dielectric layer such that the deposited Cu or Cu alloy extends above the opening; heat treating the deposited Cu or Cu alloy while applying a pressure above atmospheric pressure; and planarizing the deposited Cu or Cu alloy.
Claim 15
Dependent Claim
25 words
The method according to claim 12, comprising heat treating in a chamber at a pressure of greater than about 2 atmosphere to about 750 atmospheres.
Claim 16
Dependent Claim
23 words
The method according to claim 13, comprising heat treating in a chamber at a pressure of about 2 atmospheres to about 30 atmospheres.
Claim 17
Dependent Claim
23 words
The method according to claim 14, comprising heat treating in a chamber at a pressure of about 2 atmospheres to about 5 atmospheres.
Claim 18
Dependent Claim
12 words
The method according to claim 12, comprising planarizing by chemical mechanical polishing.
Claim 19
Dependent Claim
13 words
The method according to claim 12, comprising heat treating in an inert atmosphere.
Claim 20
Dependent Claim
19 words
The method according to claim 12, comprising heat treating at a temperature of about 80° C. to 400° C.
Claim 21
Dependent Claim
22 words
The method according to claim 12, comprising depositing a barrier layer in the opening before depositing the Cu or Cu alloy layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-09-19 | 2004-03-20 | 2004-09-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-09-19 | 2008-03-20 | 2008-09-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-09-19 | 2012-03-20 | 2012-09-19 | $7700.00 | Window Closed / Lapsed |