US6120952A
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US
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Methods of reducing proximity effects in lithographic processes
Assignee: Round Rock Research LLC
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Filing: 1998-10-01
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Granted: 2000-09-19
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Expires: 2018-10-01
Abstract
Abstract Methods of reducing proximity effects in lithographic processes wherein an integrated circuitry pattern is transferred from a mask onto a semiconductor substrate are described. In one embodiment, a desired spacing is defined between a main feature which is to reside on a mask and which is to be transferred onto the substrate, and an adjacent proximity effects-correcting feature. After the spacing definition, the dimensions of the main feature are adjusted relative to the proximity effects-correcting feature to achieve a desired transferred main feature dimension. In another embodiment, a desired spacing is defined between a main feature having an edge and an adjacent sub-resolution feature. The edge of the main feature is moved relative to the sub-resolution feature to achieve a desired transferred main feature dimension.
Inventors
- 👤 Christophe Pierrat
- 👤 James E. Burdorf
- 👤 William Baggenstoss
- 👤 William Stanton
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 09:56
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/36; G03F7/00; G03F7/70; G03F7/70425; G03F7/70433; G03F7/70441
Claims Analysis
Total Claims: 39
Claim 1
Independent Claim
93 words
A method of reducing proximity effects in a lithographic process wherein an integrated circuitry pattern is transferred from a mask onto a semiconductor substrate, the method comprising: defining a desired spacing between a main feature which is to reside on the mask and which is to be transferred onto the substrate and a pair of adjacent proximity effects-correcting features disposed on opposing sides of the main feature; and after said defining, adjusting dimensions of the main feature relative to the pair of proximity effects-correcting features to achieve a desired transferred main feature dimension.
Claim 2
Independent Claim
93 words
A method of reducing proximity effects in a lithographic process wherein an integrated circuitry pattern is transferred from a mask onto a semiconductor substrate, the method comprising: defining a desired spacing between a main feature which is to reside on the mask and which is to be transferred onto the substrate and a pair of adjacent proximity effects-correcting features disposed on opposing sides of the main feature; and after said defining, adjusting dimensions of the main feature relative to the pair of proximity effects-correcting features to achieve a desired transferred main feature dimension.
Claim 3
Dependent Claim
23 words
The method of claim 1, wherein defining the desired spacing comprises selecting a spacing to optimize depth of focus in the lithographic process.
Claim 4
Dependent Claim
15 words
The method of claim 1, wherein adjusting comprises changing an area of the main feature.
Claim 5
Dependent Claim
15 words
The method of claim 1, wherein adjusting comprises changing a shape of the main feature.
Claim 6
Dependent Claim
15 words
The method of claim 1, wherein adjusting comprises increasing an area of the main feature.
Claim 7
Dependent Claim
28 words
The method of claim 1, wherein the main feature has a plurality of sides and wherein adjusting comprises moving at least a portion of one of the sides.
Claim 8
Dependent Claim
30 words
The method of claim 1, wherein the main feature has a plurality of sides and wherein adjusting comprises moving at least a portion of at least one of the sides.
Claim 9
Dependent Claim
45 words
The method of claim 1, wherein the main feature has first and second sides which are generally parallel with one another and laterally displaced from the pair of proximity effects-correcting features, and wherein adjusting comprises moving portions of each of the first and second sides.
Claim 10
Dependent Claim
46 words
The method of claim 1, wherein the main feature has first and second sides which are spaced apart from one another, and wherein adjusting comprises repositioning at least a portion of one of the first and second sides relative to its next adjacent proximity effects-correcting feature.
Claim 11
Dependent Claim
43 words
The method of claim 1, wherein the main feature has first and second sides which are spaced apart from one another, and wherein adjusting comprises repositioning portions of each of the first and second sides relative to its next adjacent proximity effects-correcting feature.
Claim 12
Independent Claim
102 words
A method of reducing proximity effects in a lithographic process wherein an integrated circuitry pattern is transferred from a mask onto a semiconductor substrate, the method comprising: defining a desired spacing between a main feature which is to reside on the mask and which is to be transferred onto the substrate and a pair of adjacent sub-resolution features disposed on opposing sides of the main feature, the main feature having parallel edges; and moving each of the edges of the main feature relative to a respective adjacent one of the pair of sub-resolution features to achieve a desired transferred main feature dimension.
Claim 13
Independent Claim
102 words
A method of reducing proximity effects in a lithographic process wherein an integrated circuitry pattern is transferred from a mask onto a semiconductor substrate, the method comprising: defining a desired spacing between a main feature which is to reside on the mask and which is to be transferred onto the substrate and a pair of adjacent sub-resolution features disposed on opposing sides of the main feature, the main feature having parallel edges; and moving each of the edges of the main feature relative to a respective adjacent one of the pair of sub-resolution features to achieve a desired transferred main feature dimension.
Claim 14
Dependent Claim
18 words
The method of claim 11, wherein defining comprises selecting the spacing to achieve a desired depth of focus.
Claim 15
Dependent Claim
23 words
The method of claim 11, wherein moving comprises moving each edge away from the respective adjacent one of the pair of sub-resolution features.
Claim 16
Dependent Claim
29 words
The method of claim 11, wherein moving comprises moving each edge towards the respective adjacent one of the pair of sub-resolution features and increasing dimensions of the main feature.
Claim 17
Dependent Claim
22 words
The method of claim 11, wherein moving comprises moving each edge toward the respective adjacent one of the pair of sub-resolution features.
Claim 18
Dependent Claim
29 words
The method of claim 11, wherein moving comprises moving each edge toward the respective adjacent one of the pair of sub-resolution features and increasing dimensions of the main feature.
Claim 19
Dependent Claim
13 words
The method of claim 11, wherein moving increases dimensions of the main feature.
Claim 20
Dependent Claim
37 words
The method of claim 11, wherein the main feature comprises a conductive line pattern, and the desired transferred main feature dimension is approximately equal to a minimum photolithographic feature size from which the integrated circuitry is fabricated.
Claim 21
Dependent Claim
46 words
The method of claim 11, wherein the main feature comprises a conductive line pattern and moving increases dimensions of the main feature, and wherein the desired transferred main feature dimension is approximately equal to a minimum photolithographic feature size from which the integrated circuitry is fabricated.
Claim 22
Independent Claim
124 words
A method of reducing proximity effects in a lithographic process wherein an integrated circuitry pattern is transferred from a mask onto a semiconductor substrate, the method comprising: defining a plurality of main features which are to appear on the mask and be transferred onto a substrate, the main features having width dimensions; defining a desired spacing between a pair of sub-resolution features disposed on opposing sides of one of the main features and the one of the main features; changing a width dimension of the one main feature and not changing any dimensions of the pair of sub-resolution features; and forming a plurality of patterned main features on the substrate using the mask, said plurality of main features having substantially common patterned width dimensions.
Claim 23
Independent Claim
124 words
A method of reducing proximity effects in a lithographic process wherein an integrated circuitry pattern is transferred from a mask onto a semiconductor substrate, the method comprising: defining a plurality of main features which are to appear on the mask and be transferred onto a substrate, the main features having width dimensions; defining a desired spacing between a pair of sub-resolution features disposed on opposing sides of one of the main features and the one of the main features; changing a width dimension of the one main feature and not changing any dimensions of the pair of sub-resolution features; and forming a plurality of patterned main features on the substrate using the mask, said plurality of main features having substantially common patterned width dimensions.
Claim 24
Dependent Claim
38 words
The method of claim 20, wherein forming the plurality of patterned main features comprises forming the plurality of features to have width dimensions approximately equal to a minimum photolithographic feature size from which the integrated circuitry is formed.
Claim 25
Dependent Claim
22 words
The method of claim 20, wherein defining the desired spacing comprises selecting the desired spacing to achieve a desired depth of focus.
Claim 26
Dependent Claim
20 words
The method of claim 20, wherein defining the plurality of main features comprises defining at least one conductive line pattern.
Claim 27
Dependent Claim
57 words
The method of claim 20, wherein defining the plurality of main features comprises defining at least one conductive line pattern, and forming the plurality of patterned main features comprises forming the plurality of features to have at least one conductive line width approximately equal to a minimum photolithographic feature size from which the integrated circuitry is formed.
Claim 28
Dependent Claim
20 words
The method of claim 20, wherein defining the plurality of main features comprises defining a plurality of conductive line patterns.
Claim 29
Dependent Claim
41 words
The method of claim 20, wherein: defining the plurality of main features comprises defining a plurality of conductive line patterns; and changing the width dimension comprises moving one of the opposing edges toward a nearest of the pair of sub-resolution features.
Claim 30
Dependent Claim
60 words
The method of claim 20, wherein: defining the plurality of main features comprises defining a plurality of conductive line patterns; and changing the width dimension comprises moving each of the opposing edges toward a respective one of the pair of sub-resolution features, each edge being a nearest of the spaced-apart edges relative to each of the pair of sub-resolution features.
Claim 31
Independent Claim
240 words
A method of reducing proximity effects in a lithographic process wherein an integrated circuitry pattern is transferred from a mask onto a semiconductor substrate, the method comprising: defining a plurality of main features which are to appear on the mask at least some of which having width dimensions effective to form main feature patterns over a substrate with width dimensions which are no greater than a minimum photolithographic feature size from which the integrated circuitry is fabricated, one of the main features being spaced from other main features a distance which is effective to form a patterned main feature over the substrate which is spaced from other patterned main features over the substrate a distance which is greater than the minimum photolithographic feature size, the one main feature having a pair of edges defining a first width dimension; defining a desired spacing between the one main feature and each of a pair of proximity effects-correcting features, each of the pair to appear on the mask adjacent to opposing sides of the one main feature; and after said defining of the desired spacing, moving one of the opposing edges of the one main feature to define a second width dimension which is different from the first width dimension, moving enabling a patterned main feature to be formed on the substrate corresponding to the one main feature to have a width dimension which is no greater than the minimum photolithographic feature size.
Claim 32
Independent Claim
240 words
A method of reducing proximity effects in a lithographic process wherein an integrated circuitry pattern is transferred from a mask onto a semiconductor substrate, the method comprising: defining a plurality of main features which are to appear on the mask at least some of which having width dimensions effective to form main feature patterns over a substrate with width dimensions which are no greater than a minimum photolithographic feature size from which the integrated circuitry is fabricated, one of the main features being spaced from other main features a distance which is effective to form a patterned main feature over the substrate which is spaced from other patterned main features over the substrate a distance which is greater than the minimum photolithographic feature size, the one main feature having a pair of edges defining a first width dimension; defining a desired spacing between the one main feature and each of a pair of proximity effects-correcting features, each of the pair to appear on the mask adjacent to opposing sides of the one main feature; and after said defining of the desired spacing, moving one of the opposing edges of the one main feature to define a second width dimension which is different from the first width dimension, moving enabling a patterned main feature to be formed on the substrate corresponding to the one main feature to have a width dimension which is no greater than the minimum photolithographic feature size.
Claim 33
Dependent Claim
30 words
The method of claim 28, wherein defining a desired spacing comprises defining a desired spacing between the one main feature and each of the pair of sub-resolution proximity effects-correcting features.
Claim 34
Dependent Claim
22 words
The method of claim 28, wherein defining the desired spacing comprises defining the desired spacing to achieve a maximum depth of focus.
Claim 35
Dependent Claim
27 words
The method of claim 28, wherein moving opposing edges of the one main feature comprises moving an edge nearest each of the pair of proximity effects-correcting features.
Claim 36
Dependent Claim
36 words
The method of claim 28, wherein moving opposing edges of the one main feature comprises moving an edge nearest each of the pair of proximity effects-correcting features toward each of the pair of proximity effects-correcting features.
Claim 37
Dependent Claim
29 words
The method of claim 28, wherein moving comprises moving the opposing edges of the one main feature to define the second width to be greater than the first width.
Claim 38
Dependent Claim
39 words
The method of claim 28, wherein moving opposing edges of the one main feature comprises moving an edge nearest each of the pair of proximity effects-correcting features to define the second width to be greater than the first width.
Claim 39
Dependent Claim
20 words
The method of claim 28, wherein defining the plurality of main features comprises defining a plurality of conductive line patterns.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-09-19 | 2004-03-20 | 2004-09-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-09-19 | 2008-03-20 | 2008-09-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-09-19 | 2012-03-20 | 2012-09-19 | $7700.00 | Window Closed / Lapsed |