Patent US6118985A successfully refreshed from Google Patents.
US6118985A
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High frequency switch device, front end unit and transceiver
Assignee: Toshiba Corp
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Filing: 1998-07-24
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Granted: 2000-09-12
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Expires: 2018-07-24
Abstract
Abstract In order to minimize the chip area and improve the linear characteristics obtained when large signals are inputted, a high frequency switch device comprises first, second and third terminals (3, 4, 6); a first circuit composed of a first FET (11), and a first inductor (21) and a first capacitor (25) both connected with the first FET (11) in parallel to each other, one end of the first circuit being connected to the first terminal (3); and a second circuit composed of a second FET (12), and a second inductor (22) and a second capacitor (26) both connected with the second FET (12) in parallel to each other, one end of the second circuit being connected to the first circuit and the other end of the second circuit being connected to the second terminal (4). Further, the high frequency switch device is characterized in that a first control signal is applied to a gate of the first FET (11) via a resistance (31); a second control signal is applied to a gate of the second FET (12) via a resistance (33); the third terminal (6) is connected to a common junction point of the first and second circuits; and a predetermined potential is applied to the common junction point.
Inventors
- 👤 Katsue Kawakyu
- 👤 Masami Nagaoka
- 👤 Atsushi Kameyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 14:21
CPC Classifications
H; H03; H03K; H03K17/00; H03K17/51; H03K17/56; H03K17/687; H03K17/693; H03K17/06; H03K17/063; H04; H04B; H04B1/00; H04B1/38; H04B1/40; H04B1/44; H04B1/48; H03K2017/066; H03K2217/00; H03K2217/0054; H03K2217/009
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
164 words
A high frequency switch device, comprising: first, second and third-terminals; a first circuit composed of a first FET, and a first inductor and a first capacitor both connected with said first FET in parallel to each other, one end of said first circuit being connected to said first terminal; and a second circuit composed of a second FET, and a second inductor and a second capacitor both connected with the second FET in parallel to each other, one end of said second circuit being connected to said first circuit and the other end of said second circuit being connected to said second terminal, and wherein a first control signal is applied to a gate of the first FET via a resistance; a second control signal is applied to a gate of the second FET via a resistance; said third terminal is connected to a common junction point of said first and second circuits; and a predetermined potential is applied to the common junction point.
Claim 2
Dependent Claim
164 words
A high frequency switch device, comprising: first, second and third-terminals; a first circuit composed of a first FET, and a first inductor and a first capacitor both connected with said first FET in parallel to each other, one end of said first circuit being connected to said first terminal; and a second circuit composed of a second FET, and a second inductor and a second capacitor both connected with the second FET in parallel to each other, one end of said second circuit being connected to said first circuit and the other end of said second circuit being connected to said second terminal, and wherein a first control signal is applied to a gate of the first FET via a resistance; a second control signal is applied to a gate of the second FET via a resistance; said third terminal is connected to a common junction point of said first and second circuits; and a predetermined potential is applied to the common junction point.
Claim 3
Dependent Claim
67 words
The high frequency switch device of claim 1, wherein the high frequency switch device is used to switch radio signal paths when radio signals are given from a transmitter to an antenna or when radio signals are given from the antenna to a receiver; said first and second terminals are connected to the receiver and the transmitter, respectively; and said third terminal is connected to the antenna.
Claim 4
Dependent Claim
19 words
The high frequency switch device of claim 1, wherein the first and second capacitors are of linear element, respectively.
Claim 5
Dependent Claim
20 words
The high frequency switch device of claim 1, wherein the first and second capacitors are of parallel plane capacitance, respectively.
Claim 6
Dependent Claim
78 words
The high frequency switch device of claim 4, wherein the first inductor, a non-linear capacitance obtained when the first FET is turned off, and the first capacitor form a parallel resonance circuit; the second inductor, another non-linear capacitance obtained when the second FET is turned off, and the second capacitor form another parallel resonance circuit; and the first and second inductors are both so determined as to satisfy a predetermined parallel resonance condition at a predetermined frequency, respectively.
Claim 7
Dependent Claim
33 words
The high frequency switch device of claim 4, wherein the high frequency switch device is constructed on a single substrate as one chip; and the first and second capacitors are of metal-insulator-metal structure.
Claim 8
Dependent Claim
45 words
The high frequency switch device of claim 6, wherein the first FET is arranged between the first inductor and the first capacitor on a device chip; and the second FET is arranged between the second inductor and the second capacitor on the same device chip.
Claim 9
Dependent Claim
190 words
A front end unit used at a radio frequency stage of a transceiver and having a high frequency switch device as a radio frequency switch, the high frequency switch device comprising: first, second and third terminals; a first circuit composed of a first FET, and a first inductor and a first capacitor both connected with said first FET in parallel to each other, one end of said first circuit being connected to said first terminal; and a second circuit composed of a second FET, and a second inductor and a second capacitor both connected with the second FET in parallel to each other, one end of said second circuit being connected to said first circuit and the other end of said second circuit being connected to said second terminal, and wherein a first control signal is applied to a gate of the first FET via a resistance; a second control signal is applied to a gate of the second FET via a resistance; said third terminal is connected to a common junction point of said first and second circuits; and a predetermined potential is applied to the common junction point.
Claim 10
Dependent Claim
190 words
A front end unit used at a radio frequency stage of a transceiver and having a high frequency switch device as a radio frequency switch, the high frequency switch device comprising: first, second and third terminals; a first circuit composed of a first FET, and a first inductor and a first capacitor both connected with said first FET in parallel to each other, one end of said first circuit being connected to said first terminal; and a second circuit composed of a second FET, and a second inductor and a second capacitor both connected with the second FET in parallel to each other, one end of said second circuit being connected to said first circuit and the other end of said second circuit being connected to said second terminal, and wherein a first control signal is applied to a gate of the first FET via a resistance; a second control signal is applied to a gate of the second FET via a resistance; said third terminal is connected to a common junction point of said first and second circuits; and a predetermined potential is applied to the common junction point.
Claim 11
Dependent Claim
66 words
The front end unit of claim 8, wherein the high frequency switch device is used to switch radio signal paths when radio signals are given from a transmitter to an antenna or when radio signals are given from the antenna to a receiver; said first and second terminals are connected to the receiver and the transmitter, respectively; and said third terminal is connected to the antenna.
Claim 12
Dependent Claim
18 words
The front end unit of claim 8, wherein the first and second capacitors are of linear element, respectively.
Claim 13
Dependent Claim
19 words
The front end unit of claim 10, wherein the first and second capacitors are of parallel plane capacitance, respectively.
Claim 14
Dependent Claim
77 words
The front end unit of claim 11, wherein the first inductor, a non-linear capacitance obtained when the first FET is turned off, and the first capacitor form a parallel resonance circuit; the second inductor, another non-linear capacitance obtained when the second FET is turned off, and the second capacitor form another parallel resonance circuit; and the first and second inductors are both so determined as to satisfy a predetermined parallel resonance condition at a predetermined frequency, respectively.
Claim 15
Dependent Claim
32 words
The front end unit of claim 11, wherein the high frequency switch device is constructed on a single substrate as one chip; and the first and second capacitors are of metal-insulator-metal structure.
Claim 16
Dependent Claim
44 words
The front end unit of claim 13, wherein the first FET is arranged between the first inductor and the first capacitor on a device chip; and the second FET is arranged between the second inductor and the second capacitor on the same device chip.
Claim 17
Dependent Claim
211 words
A transceiver having a high frequency switch device for switching radio signal paths when radio signals are given from a transmitter to an antenna or when radio signals are given from the antenna to a receiver, the high frequency switch device comprising: first, second and third terminals connected to the transmitter, the receiver and the antenna, respectively; a first circuit composed of a first FET, and a first inductor and a first capacitor both connected with said first FET in parallel to each other, one end of said first circuit being connected to said first terminal; and a second circuit composed of a second FET, and a second inductor and a second capacitor both connected with the second FET in parallel to each other, one end of said second circuit being connected to said first circuit and the other end of said second circuit being connected to said second terminal, and wherein a first control signal is applied to a gate of the first FET via a resistance; a second control signal is applied to a gate of the second FET via a resistance; said third terminal is connected to a common junction point of said first and second circuits; and a predetermined potential is applied to the common junction point.
Claim 18
Dependent Claim
211 words
A transceiver having a high frequency switch device for switching radio signal paths when radio signals are given from a transmitter to an antenna or when radio signals are given from the antenna to a receiver, the high frequency switch device comprising: first, second and third terminals connected to the transmitter, the receiver and the antenna, respectively; a first circuit composed of a first FET, and a first inductor and a first capacitor both connected with said first FET in parallel to each other, one end of said first circuit being connected to said first terminal; and a second circuit composed of a second FET, and a second inductor and a second capacitor both connected with the second FET in parallel to each other, one end of said second circuit being connected to said first circuit and the other end of said second circuit being connected to said second terminal, and wherein a first control signal is applied to a gate of the first FET via a resistance; a second control signal is applied to a gate of the second FET via a resistance; said third terminal is connected to a common junction point of said first and second circuits; and a predetermined potential is applied to the common junction point.
Claim 19
Dependent Claim
16 words
The transceiver of claim 15, wherein the first and second capacitors are of linear element, respectively.
Claim 20
Dependent Claim
17 words
The transceiver of claim 16, wherein the first and second capacitors are of parallel plane capacitance, respectively.
Claim 21
Dependent Claim
75 words
The transceiver of claim 17, wherein the first inductor, a non-linear capacitance obtained when the first FET is turned off, and the first capacitor form a parallel resonance circuit; the second inductor, another non-linear capacitance obtained when the second FET is turned off, and the second capacitor form another parallel resonance circuit; and the first and second inductors are both so determined as to satisfy a predetermined parallel resonance condition at a predetermined frequency, respectively.
Claim 22
Dependent Claim
30 words
The transceiver of claim 17, wherein the high frequency switch device is constructed on a single substrate as one chip; and the first and second capacitors are of metal-insulator-metal structure.
Claim 23
Dependent Claim
42 words
The transceiver of claim 19, wherein the first FET is arranged between the first inductor and the first capacitor on a device chip; and the second FET is arranged between the second inductor and the second capacitor on the same device chip.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-09-12 | 2004-03-13 | 2004-09-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-09-12 | 2008-03-13 | 2008-09-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-09-12 | 2012-03-13 | 2012-09-12 | $7700.00 | Window Closed / Lapsed |