US6115296A
Expired / Lapsed
US
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Semiconductor memory device capable of reducing a leak current flowing through a substrate
Assignee: NEC Electronics Corp
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Filing: 1999-01-11
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Granted: 2000-09-05
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Expires: 2019-01-11
Abstract
Abstract In a semiconductor memory device composed of a set of SRAM cells connected in common to one another through a word line and a common connection line, a substrate potential generation circuit is connected to the word line to supply the SRAM cells through the common connection line with a substrate potential determined by a selected or a non-selected state of the word line. The substrate potential is equal to a ground potential in the selected state or is put into a negative potential in the non-selected state. The substrate potential is given to each of drive transistors included in each SRAM to reduce a leak current.
Inventors
- 👤 Yasuhiro Ando
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 07:29
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/41; G11C11/412; H; H10; H10D; H10D84/00; G11C11/413; G11C11/417
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
85 words
A substrate potential generation circuit for use in a semiconductor memory device which is formed in a substrate and which has a plurality of memory cells coupled to a word line selectively supplied with different voltages, comprising: an electronic circuit connected to the word line for producing a substrate potential in response to the different voltages given through the word line; and a connection circuit for supplying the substrate potential to each of the memory cells to control each substrate potential of each memory cell.
Claim 2
Dependent Claim
85 words
A substrate potential generation circuit for use in a semiconductor memory device which is formed in a substrate and which has a plurality of memory cells coupled to a word line selectively supplied with different voltages, comprising: an electronic circuit connected to the word line for producing a substrate potential in response to the different voltages given through the word line; and a connection circuit for supplying the substrate potential to each of the memory cells to control each substrate potential of each memory cell.
Claim 3
Dependent Claim
47 words
A substrate potential generation circuit as claimed in claim 1, wherein each of the memory cells includes a drive circuit which is controlled by the substrate potential voltage, and wherein the connection circuit is connected in common to each of the drive circuits of the memory cells.
Claim 4
Dependent Claim
66 words
A substrate potential generation circuit as claimed in claim 2, wherein the electronic circuit comprises: an inverter connected to the word line; and a transistor circuit connected to the word line, the inverter, and the connection circuit for selectively supplying a ground potential and a negative potential as the substrate potential to the connection circuit in response to the different voltages sent through the word line.
Claim 5
Dependent Claim
113 words
A substrate potential generation circuit as claimed in claim 3, wherein the transistor circuit comprises: a first transistor, connected to a ground, the connection circuit, and the word line, to selectively produce the ground potential as the substrate potential through the connection circuit when the first transistor is turned on in response to a selected one of the different voltages sent through the word line; and a second transistor, connected to the inverter and the connection circuit and supplied with the negative potential, to selectively produce the negative potential as the substrate potential through the connection circuit when the second transistor is turned on in response to another one of the different voltages.
Claim 6
Dependent Claim
26 words
A substrate potential generation circuit as claimed in claim 4, wherein each of the first and the second transistors is implemented by an n-channel MOS transistor.
Claim 7
Dependent Claim
91 words
A semiconductor memory device which is formed in a substrate and which has a plurality of word lines, said semiconductor memory device comprising: a plurality of memory cells coupled to each of the word lines and to a common connection line; and a substrate potential generation circuit, connected to each of the word lines and the common connection line, for supplying the common connection line with a substrate potential determined in response to voltages given through the word line, to deliver the substrate potential to the plurality of the memory cells.
Claim 8
Dependent Claim
91 words
A semiconductor memory device which is formed in a substrate and which has a plurality of word lines, said semiconductor memory device comprising: a plurality of memory cells coupled to each of the word lines and to a common connection line; and a substrate potential generation circuit, connected to each of the word lines and the common connection line, for supplying the common connection line with a substrate potential determined in response to voltages given through the word line, to deliver the substrate potential to the plurality of the memory cells.
Claim 9
Dependent Claim
22 words
A semiconductor memory device as claimed in claim 6, wherein each of the memory cells is implemented by a static RAM (SRAM).
Claim 10
Dependent Claim
54 words
A semiconductor memory device as claimed in claim 7, wherein each of the word lines is selectively put into a selected state and a non-selected state, and wherein the substrate potential generation circuit produces, as the substrate potential, a ground potential and a negative potential in the selected state and the non-selected state, respectively.
Claim 11
Dependent Claim
73 words
A semiconductor memory device as claimed in claim 8, wherein each of the memory cells comprises: a pair of drive transistors connected to the common connection line and also connected to a ground; a pair of information storage transistors connected to the drive transistors to form each of the memory cells in the SRAM; and a pair of selection transistors connected to each of the memory cells and each of the word lines.
Claim 12
Dependent Claim
40 words
A semiconductor memory device as claimed in claim 9, wherein each of the drive transistors and the selection transistors is implemented by an n-channel MOS transistor while each of the information storage transistors is implemented by a p-channel MOS transistor.
Claim 13
Dependent Claim
61 words
A semiconductor memory device as claimed in claim 10, wherein the substrate potential generation circuit comprises: an inverter connected to the word line; and a transistor circuit connected to the word line, the inverter, and the common connection line for selectively producing the ground potential and the negative potential as the substrate potential in the selected and the non-selected states, respectively.
Claim 14
Dependent Claim
100 words
A semiconductor memory device as claimed in claim 11, wherein the transistor circuit comprises: a first transistor, connected to a ground, the common connection circuit, and the word line, to selectively produce the ground potential as the substrate potential through the common connection line when the first transistor is turned on in the selected state; and a second transistor, connected to the inverter and the common connection line and supplied with the negative potential, to selectively produce the negative potential as the substrate potential through the common connection line when the second transistor is turned on in the non-selected state.
Claim 15
Dependent Claim
25 words
A semiconductor memory device as claimed in claim 12, wherein each of the first and the second transistors is implemented by an n-channel MOS transistor.
Claim 16
Dependent Claim
130 words
A semiconductor memory device which is formed in a substrate and which has a plurality of word lines, comprising: a plurality of memory cells connected to the plurality of the word lines and to a plurality of common connection lines, respectively; a logic element connected in common to the plurality of the word lines for selectively producing a selected signal and a non-selected signal; and a substrate potential generation circuit, supplied with the selected signal and the non-selected signal and connected to the plurality of the common connection lines, for supplying each of the common connection lines with a substrate potential determined in response to the selected and the non-selected signals, to deliver the substrate potential to the plurality of the memory cells for the plurality of the word lines.
Claim 17
Dependent Claim
130 words
A semiconductor memory device which is formed in a substrate and which has a plurality of word lines, comprising: a plurality of memory cells connected to the plurality of the word lines and to a plurality of common connection lines, respectively; a logic element connected in common to the plurality of the word lines for selectively producing a selected signal and a non-selected signal; and a substrate potential generation circuit, supplied with the selected signal and the non-selected signal and connected to the plurality of the common connection lines, for supplying each of the common connection lines with a substrate potential determined in response to the selected and the non-selected signals, to deliver the substrate potential to the plurality of the memory cells for the plurality of the word lines.
Claim 18
Independent Claim
81 words
A method of providing substrate potential for reducing leak current in a semiconductor memory formed in a substrate, said semiconductor memory having a word line and a substrate gate potential line, wherein a voltage is provided on said word line corresponding to a selected state and non-selected state, said method comprising: grounding said substrate gate potential line when said voltage indicates a selected state; and biasing said substrate potential line with a negative potential when said voltage indicates a non-selected state.
Claim 19
Independent Claim
81 words
A method of providing substrate potential for reducing leak current in a semiconductor memory formed in a substrate, said semiconductor memory having a word line and a substrate gate potential line, wherein a voltage is provided on said word line corresponding to a selected state and non-selected state, said method comprising: grounding said substrate gate potential line when said voltage indicates a selected state; and biasing said substrate potential line with a negative potential when said voltage indicates a non-selected state.
Claim 20
Dependent Claim
112 words
The method according to claim 15, wherein said grounding and said biasing of said substrate line comprises: detecting the voltage provided on said word line in a substrate potential generation circuit; if said voltage detected by said substrate potential generating circuit indicates a selected state, then a.) switching the substrate potential generation circuit to a ground; and b.) outputting the ground from said substrate potential generation circuit to said substrate gate potential line; and if said voltage detected by said substrate potential generating circuit indicates a non-selected state, then c.) switching the substrate potential generation circuit to a negative bias; and d.) outputting the negative bias to said substrate gate potential line.
References Cited (Backward Citations)
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| 3.5 Years (Year 4) | 2003-09-05 | 2004-03-06 | 2004-09-05 | $2000.00 | Window Closed / Lapsed |
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