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US6114255A
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Method of using an alloy of germanium and silicon as an antireflective coating
Assignee: Micron Technology Inc
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Filing: 1998-03-31
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Granted: 2000-09-05
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Expires: 2018-03-31
Abstract
Abstract A germanium and silicon alloy is employed as an antireflective coating material for use in active area lithography and gate area lithography steps in the formation of a semiconductor integrated circuit. A layer composed of an alloy of germanium-silicon is deposited over an active area nitride layer or over a gate area nitride layer, and a photoresist layer is then formed on the germanium-silicon alloy layer. The photoresist layer is than exposed and developed. During exposure, the germanium-silicon alloy layer substantially reduces reflection from the underlying nitride layer, thereby relieving the dependency of exposure energy and resulting line width on the underlying nitride layer thickness.
Inventors
- 👤 Werner Juengling
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:48
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/30; G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/091; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01326; H10P; H10P14/00; H10P14/60; H10P14/61; H10P50/00; H10P50/73; H10P76/00; H10P76/20; H10P76/204; H10P76/2041; H10P76/2043; H10W10/01; H10W10/011; H10W10/012; H10W10/031; H10W10/10; H10W10/13; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/947; Y10S438/948; Y10S438/95; Y10S438/952
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
62 words
A patterning method comprising: forming a plurality of stack layers upon a semiconductor substrate; forming over said plurality of stack layers a first layer composed of an alloy of germanium and silicon; forming a layer of photoresist upon said first layer; patterning said layer of photoresist; etching said plurality of stack layers; removing said layer of photoresist; and removing said first layer.
Claim 2
Dependent Claim
62 words
A patterning method comprising: forming a plurality of stack layers upon a semiconductor substrate; forming over said plurality of stack layers a first layer composed of an alloy of germanium and silicon; forming a layer of photoresist upon said first layer; patterning said layer of photoresist; etching said plurality of stack layers; removing said layer of photoresist; and removing said first layer.
Claim 3
Dependent Claim
17 words
The method as defined in claim 1, where the first layer is deposited upon a passivation layer.
Claim 4
Dependent Claim
15 words
The method of claim 2, wherein the passivation layer is an uppermost silicon nitride layer.
Claim 5
Dependent Claim
21 words
The method as defined in claim 2, wherein said passivation layer has a thickness in the range of about 1200-2400 Angstroms.
Claim 6
Dependent Claim
20 words
The method as defined in claim 1, further comprising patterning said plurality of stack layers as active area stack layers.
Claim 7
Dependent Claim
19 words
The method as defined in claim 1, further comprising patterning said plurality of stack layers as gate stack layers.
Claim 8
Dependent Claim
45 words
The method as defined in claim 1, wherein said alloy of germanium and silicon is composed of Si x Ge y , and wherein the value of x is not greater than about 0.2 and the value of y is not greater than about 1.0.
Claim 9
Dependent Claim
16 words
The method as defined in claim 1, wherein removing said first layer comprises a piranha clean.
Claim 10
Dependent Claim
24 words
The method as defined in claim 1, wherein said first layer has a thickness in a range of about 200 Angstroms to 800 Angstroms.
Claim 11
Dependent Claim
34 words
The method as defined in claim 1, wherein removing said layer of photoresist further comprises: forming a residue of photoresist, and wherein removing said first layer removes said residue of said layer of photoresist.
Claim 12
Dependent Claim
119 words
A patterning method comprising: forming a plurality of stack layers upon a semiconductor substrate; forming over said plurality of stack layers a passivation layer composed of silicon nitride and having a thickness in the range of about 1200-2400 Angstroms; forming an antireflective layer of a material composed of an alloy of germanium and silicon upon said passivation layer, said antireflective layer having a thickness in a range of about 200 Angstroms to 800 Angstroms; forming a layer of photoresist upon said antireflective layer; exposing said layer of photoresist; developing said layer of photoresist; etching said plurality of stack layers; ashing said layer of photoresist, leaving a residue of photoresist; and removing said antireflective layer and said residue of photoresist.
Claim 13
Dependent Claim
119 words
A patterning method comprising: forming a plurality of stack layers upon a semiconductor substrate; forming over said plurality of stack layers a passivation layer composed of silicon nitride and having a thickness in the range of about 1200-2400 Angstroms; forming an antireflective layer of a material composed of an alloy of germanium and silicon upon said passivation layer, said antireflective layer having a thickness in a range of about 200 Angstroms to 800 Angstroms; forming a layer of photoresist upon said antireflective layer; exposing said layer of photoresist; developing said layer of photoresist; etching said plurality of stack layers; ashing said layer of photoresist, leaving a residue of photoresist; and removing said antireflective layer and said residue of photoresist.
Claim 14
Dependent Claim
125 words
A patterning method comprising: depositing a plurality of stack layers upon a layer of silicon, the uppermost layer of said plurality of stack layers being a silicon nitride layer; depositing over said silicon nitride layer an antireflective layer of a material composed of an alloy of germanium and silicon, said silicon nitride layer having a thickness in the range of about 1200-2400 Angstroms, said antireflective layer having a thickness in a range of about 200 Angstroms to 800 Angstroms; forming a layer of photoresist upon said antireflective layer; exposing said layer of photoresist; developing said layer of photoresist; etching said plurality of stack layers; ashing said layer of photoresist, resulting in a residue of photoresist; and removing said antireflective layer and said residue of photoresist.
Claim 15
Dependent Claim
125 words
A patterning method comprising: depositing a plurality of stack layers upon a layer of silicon, the uppermost layer of said plurality of stack layers being a silicon nitride layer; depositing over said silicon nitride layer an antireflective layer of a material composed of an alloy of germanium and silicon, said silicon nitride layer having a thickness in the range of about 1200-2400 Angstroms, said antireflective layer having a thickness in a range of about 200 Angstroms to 800 Angstroms; forming a layer of photoresist upon said antireflective layer; exposing said layer of photoresist; developing said layer of photoresist; etching said plurality of stack layers; ashing said layer of photoresist, resulting in a residue of photoresist; and removing said antireflective layer and said residue of photoresist.
Claim 16
Dependent Claim
20 words
The method as defined in claim 12, further comprising patterning said plurality of stack layers as active area stack layers.
Claim 17
Dependent Claim
19 words
The method as defined in claim 12, further comprising patterning said plurality of stack layers as gate stack layers.
Claim 18
Independent Claim
36 words
A method for forming a structure comprising: providing a dielectric layer; forming an antireflective layer composed of an alloy of germanium and silicon upon said dielectric layer; selectively removing said dielectric layer beneath said antireflective layer.
Claim 19
Independent Claim
36 words
A method for forming a structure comprising: providing a dielectric layer; forming an antireflective layer composed of an alloy of germanium and silicon upon said dielectric layer; selectively removing said dielectric layer beneath said antireflective layer.
Claim 20
Dependent Claim
13 words
The method as defined in claim 15, further comprising removing said antireflective layer.
Claim 21
Dependent Claim
53 words
The method as defined in claim 15, wherein selectively removing said dielectric layer beneath said antireflective layer comprises: forming a layer of photoresist upon said antireflective layer; exposing said layer of photoresist; developing said layer of photoresist to form a pattern therein; removing said dielectric layer and said antireflective layer through the pattern.
Claim 22
Dependent Claim
19 words
The method as defined in claim 17, further comprising: removing said layer of photoresist; and removing said antireflective layer.
Claim 23
Dependent Claim
14 words
The method of claim 15, wherein the dielectric layer is composed of silicon nitride.
Claim 24
Dependent Claim
48 words
The method as defined in claim 19, wherein dielectric layer is upon an a refractory metal silicide layer which is upon an electrically conductive layer, wherein selectively removing said dielectric layer beneath said antireflective layer also selectively removes said refractory metal silicide layer and said electrically conductive layer.
Claim 25
Dependent Claim
19 words
The method of claim 15, wherein the dielectric layer has a thickness in the range of about 200-2400 Angstroms.
Claim 26
Dependent Claim
45 words
The method as defined in claim 15, wherein said alloy of germanium and silicon is composed of Si x Ge y , and wherein the value of x is not greater than about 0.2 and the value of y is not greater than about 1.0.
Claim 27
Dependent Claim
29 words
The method as defined in claim 15, wherein selectively removing said dielectric layer beneath said antireflective layer comprises an anisotropic etch of said dielectric layer and said antireflective layer.
Claim 28
Independent Claim
120 words
A method for forming a structure comprising: providing an electrically conductive layer; forming a refractory metal silicide layer upon said electrically conductive layer; forming a silicon nitride layer upon said refractory metal silicide layer, said silicon nitride layer having a thickness in the range of about 200-2400 Angstroms; forming an antireflective layer composed of an alloy of germanium and silicon upon said silicon nitride layer; forming a layer of photoresist upon said antireflective layer; exposing said layer of photoresist; developing said layer of photoresist to form a pattern therein; removing said silicon nitride layer, said antireflective layer, said refractory metal silicide layer, and said electrically conductive layer through the pattern; removing said layer of photoresist; and removing said antireflective layer.
Claim 29
Independent Claim
120 words
A method for forming a structure comprising: providing an electrically conductive layer; forming a refractory metal silicide layer upon said electrically conductive layer; forming a silicon nitride layer upon said refractory metal silicide layer, said silicon nitride layer having a thickness in the range of about 200-2400 Angstroms; forming an antireflective layer composed of an alloy of germanium and silicon upon said silicon nitride layer; forming a layer of photoresist upon said antireflective layer; exposing said layer of photoresist; developing said layer of photoresist to form a pattern therein; removing said silicon nitride layer, said antireflective layer, said refractory metal silicide layer, and said electrically conductive layer through the pattern; removing said layer of photoresist; and removing said antireflective layer.
Claim 30
Dependent Claim
45 words
The method as defined in claim 24, wherein said alloy of germanium and silicon is composed of Si x Ge y , and wherein the value of x is not greater than about 0.2 and the value of y is not greater than about 1.0.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-09-05 | 2004-03-06 | 2004-09-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-09-05 | 2008-03-06 | 2008-09-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-09-05 | 2012-03-06 | 2012-09-05 | $7700.00 | Window Closed / Lapsed |