US6107192A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Reactive preclean prior to metallization for sub-quarter micron application
Assignee: Licentia Oy
•
Filing: 1997-12-30
•
Granted: 2000-08-22
•
Expires: 2017-12-30
Abstract
Abstract The present invention generally provides a precleaning process prior to metallization for submicron features on substrates. The method includes cleaning the submicron features with radicals from a plasma of a reactive gas such as oxygen, a mixture of CF 4 /O 2 , or a mixture of He/NF 3 , wherein the plasma is preferably generated by a remote plasma source and the radicals are delivered to a chamber in which the substrate is disposed. Native oxides remaining in the submicron features are preferably reduced in a second step by treatment with radicals from a plasma containing hydrogen. Following the first or both precleaning steps, the features can be filled with metal by available metallization techniques which typically include depositing a barrier/liner layer on exposed dielectric surfaces prior to deposition of aluminum, copper, or tungsten. The precleaning and metallization steps can be conducted on available integrated processing platforms.
Inventors
- 👤 Suchitra Subrahmanyan
- 👤 Liang-Yuh Chen
- 👤 Roderick Craig Mosely
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 19:33
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/02; C23C16/0227; C23C16/0236; H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; C23C14/00; C23C14/02; C23C14/021; C23C14/022; H10P70/00; H10P70/20; H10P70/23; H10P70/234; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/052; H10W20/071; H10W20/081; Y; Y10; Y10S; Y10S438/00; Y10S438/906
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
70 words
A method of precleaning features formed in a dielectric layer on a semiconductor substrate, comprising: a) generating a plasma in a remote plasma source; b) delivering radicals from the plasma to a process chamber which contains the substrate; c) cleaning the features on the substrate prior to a barrier layer deposition; and d) cleaning the features on the substrate after the barrier layer deposition and prior to a metal deposition.
Claim 2
Independent Claim
70 words
A method of precleaning features formed in a dielectric layer on a semiconductor substrate, comprising: a) generating a plasma in a remote plasma source; b) delivering radicals from the plasma to a process chamber which contains the substrate; c) cleaning the features on the substrate prior to a barrier layer deposition; and d) cleaning the features on the substrate after the barrier layer deposition and prior to a metal deposition.
Claim 3
Dependent Claim
36 words
The method of claim 1, wherein the plasma comprises a reactive gas selected from the group consisting of oxygen, a mixture of CF 4 /O 2 , a mixture of He/NF 3 , and combinations thereof.
Claim 4
Dependent Claim
30 words
The method of claim 1, wherein the radicals of the plasma of a reactive gas is delivered to a barrier layer deposition chamber prior to deposition of the barrier layer.
Claim 5
Dependent Claim
14 words
The method of claim 1, wherein the remote plasma source is a microwave source.
Claim 6
Dependent Claim
23 words
The method of claim 1, further comprising the step of reducing native oxides with radicals from the plasma, wherein the plasma comprises hydrogen.
Claim 7
Dependent Claim
31 words
The method of claim 5, wherein the native oxide is reduced by radicals from the plasma consisting of hydrogen, or a mixture of hydrogen and N 2 , Ar, or He.
Claim 8
Dependent Claim
28 words
The method of claim 1, wherein the radicals from the plasma are delivered to a copper deposition chamber for passivation of the barrier layer prior to copper deposition.
Claim 9
Independent Claim
136 words
A method of forming features on semiconductor substrates, comprising: a) depositing a dielectric layer on a semiconductor substrate having a surface comprising a conductive or a semiconductive sublayer; b) etching features in the dielectric layer to expose the sublayer; c) cleaning the features with radicals from a plasma of a reactive gas which comprises oxygen, a mixture of CF 4 /O 2 , or a mixture of He/NF 3 , wherein the plasma is generated by a remote plasma source and the radicals are delivered to a chamber which contains the substrate; d) depositing a barrier layer on the feature; e) cleaning the barrier layer with radicals from a plasma consisting of hydrogen, or a mixture of hydrogen and N 2 , Ar, or He; and f) filling the features with a conductive or semiconductive material.
Claim 10
Independent Claim
136 words
A method of forming features on semiconductor substrates, comprising: a) depositing a dielectric layer on a semiconductor substrate having a surface comprising a conductive or a semiconductive sublayer; b) etching features in the dielectric layer to expose the sublayer; c) cleaning the features with radicals from a plasma of a reactive gas which comprises oxygen, a mixture of CF 4 /O 2 , or a mixture of He/NF 3 , wherein the plasma is generated by a remote plasma source and the radicals are delivered to a chamber which contains the substrate; d) depositing a barrier layer on the feature; e) cleaning the barrier layer with radicals from a plasma consisting of hydrogen, or a mixture of hydrogen and N 2 , Ar, or He; and f) filling the features with a conductive or semiconductive material.
Claim 11
Dependent Claim
12 words
The method of claim 8, wherein the dielectric layer comprises silicon dioxide.
Claim 12
Dependent Claim
18 words
The method of claim 8, wherein the reactive gas is a mixture of CF 4 /O 2 .
Claim 13
Dependent Claim
15 words
The method of claim 8, wherein a TiSi x layer is formed within the feature.
Claim 14
Dependent Claim
31 words
The method of claim 8, further comprising reducing native oxides remaining in the features with radicals from a plasma comprising hydrogen with little or no bias power applied to the substrate.
Claim 15
Dependent Claim
11 words
The method of claim 8, wherein the barrier layer is TiN.
Claim 16
Independent Claim
74 words
A method of precleaning and filling submicron features in a dielectric layer on a semiconductor substrate, comprising: a) cleaning the submicron features with radicals from a plasma comprising a reactive gas; b) reducing native oxides remaining in the submicron features with radicals from a plasma comprising hydrogen; c) depositing a barrier/liner layer on exposed surfaces of the dielectric layer; and d) cleaning the barrier/liner layer with radicals from the plasma of a reactive gas.
Claim 17
Independent Claim
74 words
A method of precleaning and filling submicron features in a dielectric layer on a semiconductor substrate, comprising: a) cleaning the submicron features with radicals from a plasma comprising a reactive gas; b) reducing native oxides remaining in the submicron features with radicals from a plasma comprising hydrogen; c) depositing a barrier/liner layer on exposed surfaces of the dielectric layer; and d) cleaning the barrier/liner layer with radicals from the plasma of a reactive gas.
Claim 18
Dependent Claim
18 words
The method of claim 14, wherein the reactive gas is a mixture of CF 4 /O 2 .
Claim 19
Dependent Claim
25 words
The method of claim 14, wherein the barrier/liner layer comprises a material selected from the group consisting of titanium, titanium nitride, tantalum, and tantalum nitride.
Claim 20
Dependent Claim
29 words
The method of claim 16, wherein the plasma of a reactive gas comprises oxygen, a mixture of CF 4 /O 2 , or a mixture of He/NF 3 .
Claim 21
Dependent Claim
16 words
The method of claim 17, further comprising depositing aluminum, copper, or tungsten on the barrier/liner layer.
Claim 22
Dependent Claim
37 words
The method of claim 14, wherein the plasma is generated in a remote plasma source and the radicals are delivered to a barrier layer deposition chamber which contains the substrate prior to deposition of the barrier layer.
Claim 23
Dependent Claim
35 words
The method of claim 14, wherein the plasma is generated in a remote plasma source and the radicals are delivered to a copper deposition chamber for passivation of a barrier layer prior to copper deposition.
References Cited (Backward Citations)
EP0305946A2
Cited
US5306671A
Cited
EP0680070A1
Cited
EP0518774A1
Cited
JPH0669168A
Cited
US5403434A
Cited
US5545289A
Cited
US5681780A
Cited
US5545592A
Cited
US5660682A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-08-22 | 2004-02-21 | 2004-08-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-08-22 | 2008-02-21 | 2008-08-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-08-22 | 2012-02-21 | 2012-08-22 | $7700.00 | Window Closed / Lapsed |