US6103597A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of obtaining a thin film of semiconductor material
Assignee: Commissariat à l'Énergie Atomique et Aux Énergies Alternatives
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Filing: 1997-04-11
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Granted: 2000-08-15
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Expires: 2017-04-11
Abstract
Abstract A method of obtaining a thin film from a substrate made of semiconductor material, the thin film including at least one element on one face of the substrate made of a material different from the semiconductor material, and conferring to the thin film a heterogeneous structure. The method includes implantation by bombardment of the face of said substrate and said element by ions to produce gaseous microbubbles within the volume of the substrate, and to produce a continuous zone of microbubbles within said element to demarcate a region of small thickness on the side of said face of the substrate containing said element, and a region of greater thickness formed by the rest of the substrate; the ions being chosen from among the ions of rare gases or of hydrogen gas and the temperature of the substrate being kept below the temperature at which the gas generated by the implanted ions is able to escape from the semiconductor diffusion, and; a separation of the two regions situated on each side of the zone of gaseous microbubbles, by a crystalline rearrangement effect in the substrate and the effect of microbubble pressure, whereby the region of small thickness constitutes a thin film.
Inventors
- 👤 Bernard Aspar
- 👤 Beatrice Biasse
- 👤 Michel Bruel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 22:20
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10P30/208; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10P90/1916; H10W; H10W10/00; H10W10/10; H10W10/181
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
229 words
A method of obtaining a thin film from a substrate of semiconductor material, the thin film including at least one element on a part of one face of the substrate, said element being of a different material from that of said semiconductor material, and conferring on the face a heterogeneous structure, said method comprising the steps in sequence of: implantation by bombardment of the face of said substrate and said element by ions to produce a continuous zone of microbubbles within the volume of the substrate, and adjusting said bombardment to account for said heterogeneous structure on said face, to demarcate a region of small thickness on the side of said face of the substrate containing said element, and a region of greater thickness formed by the rest of the substrate; the ions being chosen from among the ions of rare gases or of hydrogen gas and the temperature of the substrate being kept below the temperature at which the gas generated by the implanted ions is able to escape from the semiconductor by diffusion, and; thermally treating the substrate at a temperature that is sufficient to fracture the substrate to separate the two regions situated on each side of the zone of gaseous microbubbles, by a crystalline rearrangement effect in the substrate and the effect of microbubble pressure; whereby the region of small thickness constitutes a thin film.
Claim 2
Independent Claim
229 words
A method of obtaining a thin film from a substrate of semiconductor material, the thin film including at least one element on a part of one face of the substrate, said element being of a different material from that of said semiconductor material, and conferring on the face a heterogeneous structure, said method comprising the steps in sequence of: implantation by bombardment of the face of said substrate and said element by ions to produce a continuous zone of microbubbles within the volume of the substrate, and adjusting said bombardment to account for said heterogeneous structure on said face, to demarcate a region of small thickness on the side of said face of the substrate containing said element, and a region of greater thickness formed by the rest of the substrate; the ions being chosen from among the ions of rare gases or of hydrogen gas and the temperature of the substrate being kept below the temperature at which the gas generated by the implanted ions is able to escape from the semiconductor by diffusion, and; thermally treating the substrate at a temperature that is sufficient to fracture the substrate to separate the two regions situated on each side of the zone of gaseous microbubbles, by a crystalline rearrangement effect in the substrate and the effect of microbubble pressure; whereby the region of small thickness constitutes a thin film.
Claim 3
Dependent Claim
35 words
A method according to claim 1, wherein said ion implantation step further comprises successive implantations, wherein the energy of the ions for each implantation is chosen in order to obtain said continuous zone of microbubbles.
Claim 4
Dependent Claim
23 words
A method according to claim 1, further comprising a thermal treatment step to correct defects induced in said element during the implantation step.
Claim 5
Dependent Claim
44 words
A method according to claim 3, wherein said thermal treatment step for correcting defects is carried out before said thermal treatment step to separate said regions of the substrate, said thermal correction treatment step being localized to the area of substrate containing said element.
Claim 6
Dependent Claim
19 words
A method according to claim 4, wherein said thermal correction treatment step is carried out using a laser beam.
Claim 7
Dependent Claim
61 words
A method according to claim 3, wherein said thermal correction treatment of defects is carried out before the thermal treatment step to separate said regions of the substrate, said thermal correction treatment step comprising bringing the substrate to a temperature sufficient to correct the defects, said temperature being less than the temperature required to obtain the separation of said two regions.
Claim 8
Dependent Claim
29 words
A method according to claim 3, wherein said thermal correction treatment of defects is carried out after the thermal treatment step to separate the said regions of the substrate.
Claim 9
Dependent Claim
34 words
A method according to claim 3, wherein said thermal correction treatment of defects and the thermal treatment step to separate the said regions of the substrate are combined into a single thermal treatment operation.
Claim 10
Dependent Claim
21 words
A method according to claim 1, wherein said element is all or part of an electronic component or an electrical conductor.
Claim 11
Dependent Claim
28 words
A method according to claim 1, further comprising the step of bringing a support into intimate contact with said face of the substrate before said thermal treatment step.
Claim 12
Dependent Claim
26 words
A method according to claim 10, wherein said support includes all or a part of at least one electronic component and/or at least one electrical conductor.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-08-15 | 2004-02-14 | 2004-08-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-08-15 | 2008-02-14 | 2008-08-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-08-15 | 2012-02-14 | 2012-08-15 | $7700.00 | Window Closed / Lapsed |