Active matrix LCD with thin film transistor switches and method of producing the same

Claim 1

An active matrix LCD using thin film transistors as switching devices, comprising: a drain electrode formed by a transparent conductive film and a low resistance metal film sequentially laminated in this order; a drain bus line connected to said drain electrode; a source electrode; a pixel electrode connected to said source electrode and formed with a number of holes, said low resistance metal film being removed from said pixel electrode; a gate electrode formed on said transparent conductive film and said low resistance metal film in a form of an island; a gate bus line connected to said gate electrode; and a semiconductor layer and an insulation film identical in configuration with said gate bus line; said gate bus line being formed of low resistance metal and connected to said gate electrode.

Claim 3

A method of producing an active matrix LCD, comprising the steps of: (a) sequentially forming a transparent conductive film and a low resistance metal film on an insulative substrate in this order; (b) forming a drain electrode, a drain bus line connected to said drain electrode, a source electrode, and a pixel electrode connected to said source electrode and formed with a number of holes; (c) removing only said low resistance metal film from said pixel electrode by side etching; (d) executing PH 3 plasma processing on said substrate, and then sequentially forming a semiconductor film, an insulating film and a low resistance metal film in this order; (e) forming a gate electrode and a gate bus line connected to said gate electrode by patterning; and (f) forming an island identical in configuration with said gate electrode and said gate bus line.

Claim 4

A method of producing an active matrix LCD, comprising the steps of: (a) sequentially forming a transparent conductive film and a low resistance metal film on an insulative substrate in this order; (b) forming a drain electrode, a drain bus line connected to said drain electrode, a source electrode, and a pixel electrode connected to said source electrode and formed with a number of holes; (c) removing only said low resistance metal film from said pixel electrode by side etching; (d) executing PH 3 plasma processing on said substrate, and then sequentially forming a semiconductor film, an insulating film and a low resistance metal film in this order; (e) forming a gate electrode and a gate bus line connected to said gate electrode by patterning; and (f) forming an island identical in configuration with said gate electrode and said gate bus line.

Claim 7

A method of producing an active matrix LCD, comprising the steps of: (a) forming a low resistance metal film on an insulative substrate; (b) forming a gate electrode and a gate bus line connected to said gate electrode by patterning; (c) forming an insulating film, a semiconductor film and a contact layer on said substrate; (d) forming by patterning an island covering at least said gate electrode and a portion where said gate bus line and a drain bus line are expected to cross each other; (e) sequentially forming a transparent conductive film and a low resistance metal film on said substrate in this order; (f) forming by patterning said drain bus line connected to said drain electrode, a source electrode, and a pixel electrode connected to said source electrode and formed with a number of holes; (g) removing only said low resistance metal film from said pixel electrode by side etching; and (h) removing said contact layer from a channel portion.

Claim 8

A method of producing an active matrix LCD, comprising the steps of: (a) forming a low resistance metal film on an insulative substrate; (b) forming a gate electrode and a gate bus line connected to said gate electrode by patterning; (c) forming an insulating film, a semiconductor film and a contact layer on said substrate; (d) forming by patterning an island covering at least said gate electrode and a portion where said gate bus line and a drain bus line are expected to cross each other; (e) sequentially forming a transparent conductive film and a low resistance metal film on said substrate in this order; (f) forming by patterning said drain bus line connected to said drain electrode, a source electrode, and a pixel electrode connected to said source electrode and formed with a number of holes; (g) removing only said low resistance metal film from said pixel electrode by side etching; and (h) removing said contact layer from a channel portion.