Tunable threshold SOI device using back gate and intrinsic channel region

Claim 2

A fully depleted SOI device comprising an insulating layer interposed between a double well back-gate structure and a channel region of a transistor, the double well back-gate structure aligned below the channel region, wherein the channel region is an intrinsic or pseudo-intrinsic semiconductor.

Claim 3

A fully depleted SOI device as claimed in claim 1, wherein a dopant concentration of the intrinsic or pseudo-intrinsic semiconductor is such that a 30% increase in said dopant concentration would result in less than a 10 mV shift in a threshold voltage of said transistor.

Claim 4

A fully depleted SOI device as claimed in claim 1, wherein the channel region is no more than about 500 Å in thickness, the insulating layer is no more than about 70 Å in thickness, the threshold voltage is more negative than -100 mV for an nfet and more positive than +100 mV for a pfet, and the dopant concentration of the channel region is no more than about 1 e16/cm 3 .

Claim 5

A fully depleted SOI device as claimed in claim 1, wherein the channel region is no more than about 500 Å in thickness, the insulating layer is no more than about 70 Å in thickness, the threshold voltage is more negative than -100 mV for an nfet and more positive than +100 mV for a pfet, and the dopant concentration of the channel region is no more than about 1e15/cm 3 .

Claim 6

A fully depleted SOI device comprising: a semiconductor substrate of a first conductivity type; a first well of a second conductivity type formed in said semiconductor substrate, said first well having a top surface; a second well of said first conductivity type formed in said first well and surrounded by said first well on all sides except a top surface of said second well; an insulating layer extending across said top surfaces of said first and second wells; a transistor located on said insulating layer such that said insulating layer is interposed between said transistor and said semiconductor substrate, said transistor including source and drain regions of said first conductivity type formed on said insulating layer, a channel region of an intrinsic or pseudo-intrinsic semiconductor material formed on said insulating layer and aligned over said first and second wells, and a gate electrode aligned over said channel region.

Claim 7

A fully depleted SOI device comprising: a semiconductor substrate of a first conductivity type; a first well of a second conductivity type formed in said semiconductor substrate, said first well having a top surface; a second well of said first conductivity type formed in said first well and surrounded by said first well on all sides except a top surface of said second well; an insulating layer extending across said top surfaces of said first and second wells; a transistor located on said insulating layer such that said insulating layer is interposed between said transistor and said semiconductor substrate, said transistor including source and drain regions of said first conductivity type formed on said insulating layer, a channel region of an intrinsic or pseudo-intrinsic semiconductor material formed on said insulating layer and aligned over said first and second wells, and a gate electrode aligned over said channel region.

Claim 8

A fully depleted SOI device comprising: a semiconductor substrate of a first conductivity type; a first region of a second conductivity type formed in said semiconductor substrate, said first region having a first side, a second side opposite said first side, and a top surface; a second region of said first conductivity type formed in said semiconductor substrate, said second region being formed adjacent the entire first side of said first region, said second region having a top surface; a third region of said first conductivity type formed in said semiconductor substrate, said third region being formed adjacent the entire second side of said first region, said third region having a top surface; an insulating layer extending across a top surface of said first, second and third regions; a transistor located on said insulating layer such that said insulating layer is interposed between said transistor and said semiconductor substrate, said transistor including source and drain regions of said first conductivity type located on said insulating layer, a channel region of an intrinsic or pseudo-intrinsic semiconductor material located on said insulating layer and aligned over said second region, and a gate electrode aligned over said channel region.

Claim 9

A fully depleted SOI device comprising: a semiconductor substrate of a first conductivity type; a first region of a second conductivity type formed in said semiconductor substrate, said first region having a first side, a second side opposite said first side, and a top surface; a second region of said first conductivity type formed in said semiconductor substrate, said second region being formed adjacent the entire first side of said first region, said second region having a top surface; a third region of said first conductivity type formed in said semiconductor substrate, said third region being formed adjacent the entire second side of said first region, said third region having a top surface; an insulating layer extending across a top surface of said first, second and third regions; a transistor located on said insulating layer such that said insulating layer is interposed between said transistor and said semiconductor substrate, said transistor including source and drain regions of said first conductivity type located on said insulating layer, a channel region of an intrinsic or pseudo-intrinsic semiconductor material located on said insulating layer and aligned over said second region, and a gate electrode aligned over said channel region.