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US6095161A
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Processing and post-processing compositions and methods of using same
Assignee: Micron Technology Inc
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Filing: 1997-01-17
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Granted: 2000-08-01
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Expires: 2017-01-17
Abstract
Abstract A composition for use in processing and cleaning substrates includes a compound of the formula (I): R 1 --C(O)--NR 2 --[(CR 3 R 4 ) x --N--R 5 ] y --[C(O)] z --R 6 , wherein each of R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 is independently H or an organic group, x=1-10, y=0-10, and z=0-1. The compound of Formula I is preparable by a condensation reaction of a carboxylic acid and an amine. A method of processing a substrate includes, for example, planarizing the substrate surface with a processing composition comprising a compound of Formula I. A method of cleaning a substrate and processing equipment after, for example, planarizing a substrate surface with an abrasive material includes cleaning the substrate surface and processing equipment with the cleaning composition.
Inventors
- 👤 Brian A. Vaartstra
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 12:38
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/10; H10P70/15; C; C11; C11D; C11D1/00; C11D1/38; C11D1/52; C11D1/528; C11D17/00; C11D17/04; C11D17/049; C11D3/00; C11D3/16; C11D3/20; C11D3/2075; C11D3/2079; C11D3/26; C11D3/30; C11D3/32; C11D2111/00; C11D2111/10; C11D2111/14; C11D2111/22
Claims Analysis
Total Claims: 52
Claim 1
Independent Claim
80 words
A method of cleaning a semiconductor-based substrate, the method comprising: providing a semiconductor-based substrate surface; and cleaning the semiconductor-based substrate surface with a cleaning composition, the cleaning composition comprising a compound of the formula: (I) R 1 --C(O)--NR 2 --[(CR 3 R 4 ) x --N--R 5 ] y --[C(O)] z ,--R 6 , wherein each of R 1 , R 2 , R 3 , and R 6 is independently H or a hydrocarbon moiety, x=1-10, Y=1-10, and z=0-1.
Claim 2
Independent Claim
80 words
A method of cleaning a semiconductor-based substrate, the method comprising: providing a semiconductor-based substrate surface; and cleaning the semiconductor-based substrate surface with a cleaning composition, the cleaning composition comprising a compound of the formula: (I) R 1 --C(O)--NR 2 --[(CR 3 R 4 ) x --N--R 5 ] y --[C(O)] z ,--R 6 , wherein each of R 1 , R 2 , R 3 , and R 6 is independently H or a hydrocarbon moiety, x=1-10, Y=1-10, and z=0-1.
Claim 3
Dependent Claim
38 words
The method according to claim 1, wherein each of R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 is independently H or a hydrocarbon moiety containing 1-30 carbon atoms.
Claim 4
Dependent Claim
10 words
The method according to claim 2, wherein x=1-3 and y=1-5.
Claim 5
Dependent Claim
25 words
The method according to claim 1, wherein each of R 1 and R 6 is independently H or a hydrocarbon moiety containing 10-20 carbon atoms.
Claim 6
Dependent Claim
31 words
The method according to claim 1, wherein each of R 2 , R 3 , R 4 and R 5 is independently H or a hydrocarbon moiety containing 1-5 carbon atoms.
Claim 7
Dependent Claim
33 words
The method according to claim 1, wherein at least one of R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 is an alkyl moiety.
Claim 8
Dependent Claim
24 words
The method according to claim 1, wherein the cleaning composition further comprises at least one of a parent carboxylic acid or a parent amine.
Claim 9
Dependent Claim
25 words
The method according to claim 1, wherein the compound of Formula I is preparable by a condensation reaction of a carboxylic acid and an amine.
Claim 10
Dependent Claim
28 words
The method according to claim 1, wherein the compound of Formula I is present in the cleaning composition in an amount of less than about 50% by weight.
Claim 11
Dependent Claim
28 words
The method according to claim 9, wherein the compound of Formula I is present in the cleaning composition in an amount of less than about 10% by weight.
Claim 12
Independent Claim
81 words
A method of planarizing a substrate, the method comprising: providing a semiconductor-based substrate surface; and planarizing the semiconductor-based substrate surface with a processing composition, the processing composition comprising a compound of the formula: (I) R 1 --C(O)--NR 2 --[(CR 3 R 4 ) x --N--R 5 ] y --[C(O)] z --R 6 , wherein each of R 1 , R 2 , R 3 , R 4 and R 6 is independently H or an organic group, x=1-10, y=0-10, and z=0-1.
Claim 13
Independent Claim
81 words
A method of planarizing a substrate, the method comprising: providing a semiconductor-based substrate surface; and planarizing the semiconductor-based substrate surface with a processing composition, the processing composition comprising a compound of the formula: (I) R 1 --C(O)--NR 2 --[(CR 3 R 4 ) x --N--R 5 ] y --[C(O)] z --R 6 , wherein each of R 1 , R 2 , R 3 , R 4 and R 6 is independently H or an organic group, x=1-10, y=0-10, and z=0-1.
Claim 14
Dependent Claim
38 words
The method according to claim 11, wherein each of R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 is independently H or an organic group containing 1-30 carbon atoms.
Claim 15
Dependent Claim
10 words
The method according to claim 12, wherein x=1-3 and y=1-5.
Claim 16
Dependent Claim
25 words
The method according to claim 11, wherein each of R 1 and R 6 is independently H or an organic group containing 10-20 carbon atoms.
Claim 17
Dependent Claim
32 words
The method according to claim 11, wherein each of R 2 , R 3 , R 4 , and R 5 is independently H or an organic group containing 1-5 carbon atoms.
Claim 18
Dependent Claim
32 words
The method according to claim 11, wherein at least one of R 1 , R 2 , R 3 , R 4 R 5 , and R 6 is an alkyl moiety.
Claim 19
Dependent Claim
24 words
The method according to claim 11, wherein the processing composition further comprises at least one of a parent carboxylic acid or a parent amine.
Claim 20
Dependent Claim
25 words
The method according to claim 11, wherein the compound of Formula I is preparable by a condensation reaction of a carboxylic acid and an amine.
Claim 21
Dependent Claim
28 words
The method according to claim 11, wherein the compound of Formula I is present in the processing composition in an amount of less than about 50% by weight.
Claim 22
Dependent Claim
28 words
The method according to claim 18, wherein the compound of Formula I is present in the processing composition in an amount of less than about 10% by weight.
Claim 23
Dependent Claim
15 words
The method according to claim 11, wherein the processing composition further comprises an abrasive component.
Claim 24
Independent Claim
109 words
A method of cleaning processing equipment, the method comprising: providing a planarization surface; and cleaning the planarization surface with a composition, the composition comprising a compound of the formula: (I) R 1 --C(O)--NR 2 --[(CR 3 R 4 ) x --N--R 5 ] y --[C(O)] z --R 6 , wherein each of R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 is independently H or an organic group, x=1-10, y=0-10, and z=0-1, and wherein at least one of R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 is an alkyl moiety.
Claim 25
Independent Claim
109 words
A method of cleaning processing equipment, the method comprising: providing a planarization surface; and cleaning the planarization surface with a composition, the composition comprising a compound of the formula: (I) R 1 --C(O)--NR 2 --[(CR 3 R 4 ) x --N--R 5 ] y --[C(O)] z --R 6 , wherein each of R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 is independently H or an organic group, x=1-10, y=0-10, and z=0-1, and wherein at least one of R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 is an alkyl moiety.
Claim 26
Dependent Claim
38 words
The method according to claim 22, wherein each of R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 is independently H or an organic group containing 1-30 carbon atoms.
Claim 27
Dependent Claim
10 words
The method according to claim 22, wherein x=1-3 and y=1-5.
Claim 28
Dependent Claim
25 words
The method according to claim 22, wherein each of R 1 and R 6 is independently H or an organic group containing 10-20 carbon atoms.
Claim 29
Dependent Claim
32 words
The method according to claim 22, wherein each of R 2 , R 3 , R 4 , and R 5 is independently H or an organic group containing 1-5 carbon atoms.
Claim 30
Dependent Claim
23 words
The method according to claim 22, wherein the composition further comprises at least one of a parent carboxylic acid or a parent amine.
Claim 31
Dependent Claim
25 words
The method according to claim 22, wherein the compound of Formula I is preparable by a condensation reaction of a carboxylic acid and an amine.
Claim 32
Dependent Claim
27 words
The method according to claim 22, wherein the compound of Formula I is present in the composition in an amount of less than about 50% by weight.
Claim 33
Dependent Claim
27 words
The method according to claim 29, wherein the compound of Formula I is present in the composition in an amount of less than about 10% by weight.
Claim 34
Dependent Claim
24 words
The method according to claim 22, wherein the planarization surface is selected from the group consisting of an abrasive pad and a polishing pad.
Claim 35
Dependent Claim
78 words
A composition for use in fabricating semiconductor-based structures, the composition comprising a compound of the formula: (I) R 1 --C(O)--NR 2 --[(CR 3 R 4 ) x --N--R 5 ] y --[C(O)] z --R 6 , wherein each of R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 is independently H or an organic group, x=1-10, y=0-10, and z=0-1 wherein the composition is used for planarizing semiconductor-based substrate surfaces.
Claim 36
Dependent Claim
78 words
A composition for use in fabricating semiconductor-based structures, the composition comprising a compound of the formula: (I) R 1 --C(O)--NR 2 --[(CR 3 R 4 ) x --N--R 5 ] y --[C(O)] z --R 6 , wherein each of R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 is independently H or an organic group, x=1-10, y=0-10, and z=0-1 wherein the composition is used for planarizing semiconductor-based substrate surfaces.
Claim 37
Dependent Claim
36 words
The composition of claim 32, wherein each of R 1 , R 2 ,R 3 , R 4 , R 5 , and R 6 is independently H or an organic group containing 1-30 carbon atoms.
Claim 38
Dependent Claim
9 words
The composition of claim 32, wherein x=1-3 and y=1-5.
Claim 39
Dependent Claim
32 words
The composition of claim 32, wherein at least one of R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 is an alkyl moiety.
Claim 40
Dependent Claim
24 words
The composition of claim 32, wherein each of R 1 and R 6 is independently H or an organic group containing 10-20 carbon atoms.
Claim 41
Dependent Claim
31 words
The composition of claim 32, wherein each of R 2 , R 3 , R 4 , and R 5 is independently H or an organic group containing 1-5 carbon atoms.
Claim 42
Dependent Claim
24 words
The composition of claim 32, wherein the compound of Formula I is preparable by a condensation reaction of a carboxylic acid and an amine.
Claim 43
Dependent Claim
26 words
The composition of claim 32, wherein the compound of Formula I is present in the composition in an amount of less than about 50% by weight.
Claim 44
Dependent Claim
26 words
The composition of claim 32, wherein the compound of Formula I is present in the composition in an amount of less than about 10% by weight.
Claim 45
Dependent Claim
10 words
The composition of claim 32, further comprising an abrasive component.
Claim 46
Independent Claim
44 words
A method of cleaning a substrate, the method comprising: providing a semiconductor-based substrate surface; and cleaning the semiconductor-based substrate surface with a cleaning composition, the cleaning composition comprising an amido-amine compound and at least one of a parent carboxylic acid or a parent amine.
Claim 47
Independent Claim
44 words
A method of cleaning a substrate, the method comprising: providing a semiconductor-based substrate surface; and cleaning the semiconductor-based substrate surface with a cleaning composition, the cleaning composition comprising an amido-amine compound and at least one of a parent carboxylic acid or a parent amine.
Claim 48
Independent Claim
34 words
A method of planarizing a substrate, the method comprising: providing a semiconductor-based substrate surface; and planarizing the semiconductor-based substrate surface with a processing composition, the processing composition, the processing composition comprising an amide-containing compound.
Claim 49
Independent Claim
34 words
A method of planarizing a substrate, the method comprising: providing a semiconductor-based substrate surface; and planarizing the semiconductor-based substrate surface with a processing composition, the processing composition, the processing composition comprising an amide-containing compound.
Claim 50
Dependent Claim
14 words
The method according to claim 43, wherein the amide-containing compound is an amido-amine compound.
Claim 51
Independent Claim
96 words
A method of cleaning processing equipment, the method comprising: providing a planarization surface wherein the planarization surface is selected from the group consisting of an abrasive pad and a polishing pad; and cleaning the planarization surface with a composition, the composition comprising a compound of the formula: (I) R 1 --C(O)--NR 2 --[(CR 3 R 4 ) x --N--R 5 ] y --[C(O)] z --R 6 , wherein each of R 1 , R 2 , R 3 , R 5 , and R 6 is independently H or an organic group, x=1-10, y=0-10, and z=0-1.
Claim 52
Independent Claim
96 words
A method of cleaning processing equipment, the method comprising: providing a planarization surface wherein the planarization surface is selected from the group consisting of an abrasive pad and a polishing pad; and cleaning the planarization surface with a composition, the composition comprising a compound of the formula: (I) R 1 --C(O)--NR 2 --[(CR 3 R 4 ) x --N--R 5 ] y --[C(O)] z --R 6 , wherein each of R 1 , R 2 , R 3 , R 5 , and R 6 is independently H or an organic group, x=1-10, y=0-10, and z=0-1.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2003-08-01 | 2004-01-31 | 2004-08-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-08-01 | 2008-01-31 | 2008-08-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-08-01 | 2012-01-31 | 2012-08-01 | $7700.00 | Window Closed / Lapsed |