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US6087681A
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GaN semiconductor light emitting device having a group III-V substrate
Assignee: Rohm Co Ltd
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Filing: 1998-09-08
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Granted: 2000-07-11
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Expires: 2018-09-08
Abstract
Abstract A light emitting device employing gallium nitride type compound semiconductor which generates no crystal defect, dislocation and can be separated easily to chips by cleavage and a method for producing the same are provided. As a substrate on which gallium nitride type compound semiconductor layers are stacked, a gallium nitride type compound semiconductor substrate, a single-crystal silicon, a group II-VI compound semiconductor substrate, or a group III-IV compound semiconductur substrate is employed.
Inventors
- 👤 Yukio Shakuda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 20:10
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10H20/01335; H10H20/0137; H10H20/80; H10H20/81; H10H20/817
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
32 words
A semiconductor light emitting device comprising gallium nitride type compound semiconductor layers stacked on a group III-V compound semiconductor substrate, wherein the group III-V compound semiconductor substrate is made of indium arsenide.
Claim 2
Dependent Claim
32 words
A semiconductor light emitting device comprising gallium nitride type compound semiconductor layers stacked on a group III-V compound semiconductor substrate, wherein the group III-V compound semiconductor substrate is made of indium arsenide.
Claim 3
Dependent Claim
40 words
The semiconductor light emitting device of claim 1, wherein the gallium nitride type compound semiconductor layers are stacked on the group III-V compound semiconductor substrate having a principal plane, the principal plane being a top surface comprising group V atoms.
Claim 4
Dependent Claim
38 words
The semiconductor light emitting device of claim 1, wherein the gallium nitride type compound semiconductor layers are a plurality of layers including a p-type layer and an n-type layer and having an active layer for emission of light.
Claim 5
Dependent Claim
35 words
The semiconductor light emitting device of claim 1, wherein the gallium nitride type compound semiconductor layers comprises a buffer layer, a lower cladding layer, an active layer, an upper cladding layer, and a cap layer.
Claim 6
Dependent Claim
71 words
The semiconductor light emitting device of claim 4, wherein the buffer layer is made of n-type Ga w In 1-w N (0<w≦1), the lower cladding layer is made of n-type Al x Ga 1-x N (0≦x<1), the active layer is made of Ga n In 1-n N (0<n≦1), the upper cladding layer is made of p-type Al x Ga 1-x N (0<x<1), and the cap layer is made of p-type GaN.
References Cited (Backward Citations)
US4147584A
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US4890293A
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EP0477013A2
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US5210767A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-07-11 | 2004-01-10 | 2004-07-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-07-11 | 2008-01-10 | 2008-07-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-07-11 | 2012-01-10 | 2012-07-11 | $7700.00 | Window Closed / Lapsed |