Patent US6085690A successfully refreshed from Google Patents.
US6085690A
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US
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Chemical vapor deposition apparatus
Assignee: Canon Anelva Corp
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Filing: 1999-09-13
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Granted: 2000-07-11
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Expires: 2019-09-13
Abstract
Abstract A deposition apparatus has a reactor 11 which is furnished with a reaction gas delivery part 13 and a substrate holder 12 in which reaction gas is delivered from the reaction gas delivery part to a substrate 23 on the substrate holder, and a thin film is deposited on the substrate by means of a chemical reaction which results from supplying HF power to the reaction gas delivery part. Plasma is generated and excites the reaction gas. The gas delivery parts 27, 29, 30, 31 produce a flow of purge gas in the dead space surrounding the reaction gas deliver part. Reaction gas which is liable to be retained in the dead space is driven out by the flow of this gas, and circulation and retention of reaction gas are prevented.
Inventors
- 👤 Shigeru Mizuno
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:48
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45563; C23C16/45565; C23C16/4412; C23C16/45502; C23C16/45519; C23C16/45568
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
196 words
A chemical vapor deposition apparatus, comprising: a reaction chamber for holding a substrate and including a plurality of exhaust ports and the reaction chamber having a dead space therein, the exhaust port being located below the substrate and in an area that is external to an outer diameter of the substrate the dead space partially defined by an upper wall of the reaction chamber and being outside of a flow-way of a reaction gas which reaches the plurality of exhaust ports, the dead space includes an inlet area through which reaction gas may enter, but which does not include an outlet through which the reaction gas can escape; reaction gas inlet located at a top part of the reaction chamber facing toward the substrate means for delivering a purge gas to all of the dead space, the means for delivering the purge gas arranged adjacent to the upper wall; and means for exhausting the purge gas from the reaction chamber such that a uniform down-flow of purge gas is formed in the dead space from the means for delivering to the plurality of exhaust ports so that reaction gas in the dead space is substantially eliminated.
Claim 2
Dependent Claim
196 words
A chemical vapor deposition apparatus, comprising: a reaction chamber for holding a substrate and including a plurality of exhaust ports and the reaction chamber having a dead space therein, the exhaust port being located below the substrate and in an area that is external to an outer diameter of the substrate the dead space partially defined by an upper wall of the reaction chamber and being outside of a flow-way of a reaction gas which reaches the plurality of exhaust ports, the dead space includes an inlet area through which reaction gas may enter, but which does not include an outlet through which the reaction gas can escape; reaction gas inlet located at a top part of the reaction chamber facing toward the substrate means for delivering a purge gas to all of the dead space, the means for delivering the purge gas arranged adjacent to the upper wall; and means for exhausting the purge gas from the reaction chamber such that a uniform down-flow of purge gas is formed in the dead space from the means for delivering to the plurality of exhaust ports so that reaction gas in the dead space is substantially eliminated.
Claim 3
Dependent Claim
36 words
The apparatus of claim 1, wherein the reaction chamber has a center axis and the delivering means includes a plurality of holes substantially equally spaced symmetrically with respect to the center axis in the upper wall.
Claim 4
Dependent Claim
26 words
The apparatus of claim 2, further comprising a reservoir formed on an interior surface of the upper wall, and the reservoir is connected to the holes.
Claim 5
Dependent Claim
13 words
The apparatus of claim 3, further comprising a porous plate covering the reservoir.
Claim 6
Dependent Claim
31 words
The apparatus of claim 2, wherein the exhausting means includes the plurality of exhaust ports located symmetrically with respect to the center axis in a bottom wall of the reaction chamber.
Claim 7
Dependent Claim
35 words
The apparatus of claim 1, wherein the means for delivering a purge gas includes a porous plate arranged parallel to the upper wall for defining a reservoir between the upper wall and the porous plate.
Claim 8
Dependent Claim
237 words
A chemical vapor deposition apparatus, comprising: a reaction chamber for holding a substrate and including a plurality of exhaust ports and the reaction chamber having a dead space therein, the exhaust port being located below the substrate and in an area that is external to an outer diameter of the substrate dead space partially defined by an upper wall of the reaction chamber and being outside of a flow-way of a reaction gas which reaches the plurality of exhaust ports, the dead space includes an inlet area through which the reaction gas may enter, but which does not include an outlet through which the reaction gas can escape; reaction gas inlet located at a top part of the reaction chamber facing toward the substrate means for delivering a purge gas to all of the dead space, the means for delivering including a plurality of holes in the upper wall of the reaction chamber; and means for exhausting the purge gas from the reaction chamber including the plurality of exhaust ports located in a bottom wall of the reactor chamber, wherein the plurality of holes of the means for delivering are positioned directly across from the plurality of exhaust ports such that a uniform down-flow of purge gas is formed in the dead space from the means for delivering to the means for exhausting such that entry of the reaction gas into the dead space is substantially eliminated.
Claim 9
Dependent Claim
237 words
A chemical vapor deposition apparatus, comprising: a reaction chamber for holding a substrate and including a plurality of exhaust ports and the reaction chamber having a dead space therein, the exhaust port being located below the substrate and in an area that is external to an outer diameter of the substrate dead space partially defined by an upper wall of the reaction chamber and being outside of a flow-way of a reaction gas which reaches the plurality of exhaust ports, the dead space includes an inlet area through which the reaction gas may enter, but which does not include an outlet through which the reaction gas can escape; reaction gas inlet located at a top part of the reaction chamber facing toward the substrate means for delivering a purge gas to all of the dead space, the means for delivering including a plurality of holes in the upper wall of the reaction chamber; and means for exhausting the purge gas from the reaction chamber including the plurality of exhaust ports located in a bottom wall of the reactor chamber, wherein the plurality of holes of the means for delivering are positioned directly across from the plurality of exhaust ports such that a uniform down-flow of purge gas is formed in the dead space from the means for delivering to the means for exhausting such that entry of the reaction gas into the dead space is substantially eliminated.
Claim 10
Dependent Claim
35 words
The apparatus of claim 7, wherein the means for delivering a purge gas includes a porous plate arranged parallel to the upper wall for defining a reservoir between the upper wall and the porous plate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-07-11 | 2004-01-10 | 2004-07-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-07-11 | 2008-01-10 | 2008-07-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-07-11 | 2012-01-10 | 2012-07-11 | $7700.00 | Window Closed / Lapsed |