MCM with high Q overlapping resonator

Claim 2

A monolithic resonator for a multichip module including a multilayer substrate, at least two semiconductor chips disposed on said multilayer substrate, and a plurality of conductors for electrically interconnecting said at least two semiconductor chips, said resonator comprising: overlapping first and second spiral-shaped regions of metallic material to be electrically connected to said at least two semiconductor chips via at least two of said plurality of conductors; a layer of dielectric material disposed between said first and second spiral-shaped regions of metallic material; and a via extending through said layer of dielectric material, said via coupling said first and second spiral-shaped regions of metallic material together, thereby utilizing self-winding and internal capacitance to gain resonance at frequencies of 500 MHz to 3GHz.

Claim 3

The monolithic resonator according to claim 1, wherein said first and second spiral-shaped regions of metallic material spiral in opposite directions.

Claim 4

The monolithic resonator according to claim 1, wherein said first and second spiral-shaped regions of metallic material each spiral in a geometric pattern.

Claim 5

The monolithic resonator according to claim 3, wherein said geometric pattern is selected from a group consisting of circular, octagonal, and square-shaped geometric patterns.

Claim 6

The monolithic resonator according to claim 3, wherein said geometric pattern of said first spiral-shaped region of metallic material is substantially identical to said geometric pattern of said second spiral-shaped region of metallic material.

Claim 7

The monolithic resonator according to claim 3, wherein said geometric pattern of said first spiral-shaped region of metallic material is substantially different than said geometric pattern of said second spiral-shaped region of metallic material.

Claim 8

The monolithic resonator according to claim 1, wherein said dielectric material is selected from a predetermined group of dielectric materials which provide a varied selection of internal coupling capacitances that enable said resonator to be set a desired self-resonant frequency.

Claim 9

The monolithic resonator according to claim 1, wherein said resonator exhibits a quality-factor of at least 19 at 900MHz and at least 24 at 2GHz.

Claim 10

A multichip module suitable for use in wireless applications, comprising: a multilayer substrate; at least two semiconductor chips disposed on said multilayer substrate; a plurality of conductors for electrically interconnecting said at least two semiconductor chips; and a resonator embedded in said multilayer substrate and electrically interconnected with said at least two semiconductor chips via said plurality of conductors, said resonator including; overlapping first and second spiral-shaped regions of metallic material disposed on a base substrate layer of said multilayer substrate, said first and second spiral-shaped regions electrically connected to said at least two of said plurality of conductors; a layer of dielectric material disposed between said first and second spiral-shaped regions of metallic material; and a via extending through said regions of dielectric material, electrically coupling said first and second spiral-shaped regions of metallic material together thereby causing current to travel in the same direction on the first and second spiral-shaped regions to enhance the inductance and provide the multi-chip module suitable for use in wireless applications.

Claim 11

A multichip module suitable for use in wireless applications, comprising: a multilayer substrate; at least two semiconductor chips disposed on said multilayer substrate; a plurality of conductors for electrically interconnecting said at least two semiconductor chips; and a resonator embedded in said multilayer substrate and electrically interconnected with said at least two semiconductor chips via said plurality of conductors, said resonator including; overlapping first and second spiral-shaped regions of metallic material disposed on a base substrate layer of said multilayer substrate, said first and second spiral-shaped regions electrically connected to said at least two of said plurality of conductors; a layer of dielectric material disposed between said first and second spiral-shaped regions of metallic material; and a via extending through said regions of dielectric material, electrically coupling said first and second spiral-shaped regions of metallic material together thereby causing current to travel in the same direction on the first and second spiral-shaped regions to enhance the inductance and provide the multi-chip module suitable for use in wireless applications.

Claim 12

The multichip module according to claim 9, wherein said resonator exhibits a quality-factor of at least 19 at 900MHz and at least 24 at 2GHz.

Claim 13

The multichip module according to claim 9, further comprising a layer of insulating material disposed between said first spiral-shaped region of metallic material and said base substrate layer.

Claim 14

The multichip module according to claim 9, further comprising a second layer of dielectric material disposed over said second spiral-shaped region of metallic material.

Claim 15

The multichip module according to claim 9, wherein said first and second spiral-shaped regions of metallic material spiral in opposite directions.

Claim 16

The multichip module according to claim 9, wherein said first and second spiral-shaped regions of metallic material each spiral in a geometric pattern.

Claim 17

The multichip module according to claim 14, wherein said geometric pattern is selected from a group consisting of circular, octagonal, and square-shaped geometric patterns.

Claim 18

The multichip module according to claim 14, wherein said geometric pattern of said first spiral-shaped region of metallic material is substantially identical to said geometric pattern of said second spiral-shaped region of metallic material.

Claim 19

The multichip module according to claim 14, wherein said geometric pattern of said first spiral-shaped region of metallic material is substantially different than said geometric pattern of said second spiral-shaped region of metallic material.

Claim 20

The multichip module according to claim 9, wherein said dielectric material is selected from a predetermined group of dielectric materials which provide a varied selection of internal coupling capacitances that enable said resonator of said multichip module to be set a desired self-resonant frequency.

Claim 21

A multichip module suitable for use in wireless applications, comprising: a multilayer substrate; at least two semiconductor chips disposed on said multilayer substrate; a plurality of conductors for electrically interconnecting said at least two semiconductor chips; and a resonator embedded in said multilayer substrate and electrically interconnected with said at least two semiconductor chips via said plurality of conductors, said resonator including; overlapping first and second spiral-shaped regions of metallic material disposed on a base substrate layer of said multilayer substrate, said first and second spiral-shaped regions electrically connected to said at least two of said plurality of conductors; a layer of dielectric material disposed between said first and second spiral-shaped regions of metallic material; and a via extending through said regions of dielectric material, electrically coupling said first and second spiral-shaped regions of metallic material together and not to a ground, thereby causing current to travel in the same direction on the first and second spiral-shaped regions to enhance the inductance of the multi-chip module and overlapping conductors to enhance the capacitance of the multi-chip module, such that resonance is gained at frequencies of 500 MHz to 3GHz to provide the multi-chip module suitable for use in wireless applications.

Claim 22

A multichip module suitable for use in wireless applications, comprising: a multilayer substrate; at least two semiconductor chips disposed on said multilayer substrate; a plurality of conductors for electrically interconnecting said at least two semiconductor chips; and a resonator embedded in said multilayer substrate and electrically interconnected with said at least two semiconductor chips via said plurality of conductors, said resonator including; overlapping first and second spiral-shaped regions of metallic material disposed on a base substrate layer of said multilayer substrate, said first and second spiral-shaped regions electrically connected to said at least two of said plurality of conductors; a layer of dielectric material disposed between said first and second spiral-shaped regions of metallic material; and a via extending through said regions of dielectric material, electrically coupling said first and second spiral-shaped regions of metallic material together and not to a ground, thereby causing current to travel in the same direction on the first and second spiral-shaped regions to enhance the inductance of the multi-chip module and overlapping conductors to enhance the capacitance of the multi-chip module, such that resonance is gained at frequencies of 500 MHz to 3GHz to provide the multi-chip module suitable for use in wireless applications.