US6074942A
Expired / Lapsed
US
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Method for forming a dual damascene contact and interconnect
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 1998-06-03
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Granted: 2000-06-13
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Expires: 2018-06-03
Abstract
Abstract A method of forming a dual damascene structure including contacts and interconnects over a substrate is disclosed. The method comprises the steps of: forming an insulating layer on said substrate; forming a nitride layer over said insulating layer; forming a cap oxide layer over said nitride layer; patterning and etching said insulating layer, nitride layer, and cap oxide layer to correspond to the location of said contacts; patterning and etching said nitride layer and said cap oxide layer to correspond to the pattern of said interconnects; and performing a reflow step.
Inventors
- 👤 Chine-Gie Lou
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 17:58
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/082; H10W20/084; H10W20/0888
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
119 words
A method of forming a dual damascene structure including contacts and interconnects over a substrate, the method comprising the steps of: forming an insulating layer on said substrate, said insulating layer formed from borophosphosilicate glass (BPSG) or phosphosilicate glass (PSG); forming a nitride layer over said insulating layer; forming a cap oxide layer over said nitride layer, said cap oxide layer being silicon dioxide having a higher reflow temperature than said insulating layer; patterning and etching said insulating layer, said nitride layer, and said cap oxide layer to correspond to the location of said contacts; patterning and etching said nitride layer and said cap oxide layer to correspond to the pattern of said interconnects; and performing a reflow process.
Claim 2
Independent Claim
119 words
A method of forming a dual damascene structure including contacts and interconnects over a substrate, the method comprising the steps of: forming an insulating layer on said substrate, said insulating layer formed from borophosphosilicate glass (BPSG) or phosphosilicate glass (PSG); forming a nitride layer over said insulating layer; forming a cap oxide layer over said nitride layer, said cap oxide layer being silicon dioxide having a higher reflow temperature than said insulating layer; patterning and etching said insulating layer, said nitride layer, and said cap oxide layer to correspond to the location of said contacts; patterning and etching said nitride layer and said cap oxide layer to correspond to the pattern of said interconnects; and performing a reflow process.
Claim 3
Dependent Claim
21 words
The method of claim 1 further including the step of forming a liner oxide between said substrate and said insulating layer.
Claim 4
Dependent Claim
16 words
The method of claim 1 further including the step of polishing said insulating layer by CMP.
Claim 5
Dependent Claim
15 words
The method of claim 1 wherein said nitride layer is Si 3 N 4 .
Claim 6
Dependent Claim
19 words
The method of claim 1 further including the step of filling said dual damascene structure with a conductive material.
Claim 7
Dependent Claim
23 words
The method of claim 1 wherein said reflow step is a RTP at 950° C. to 1100° C. for 10 to 30 seconds.
Claim 8
Dependent Claim
26 words
The method of claim 1 wherein said reflow step is an atmospheric pressure CVD step at 850° C. to 900° C. for 5 to 30 minutes.
Claim 9
Independent Claim
144 words
A method of forming a contact and interconnect structure over a substrate, the method comprising the steps of: forming an insulating layer on said substrate, said insulating layer formed from borophosphosilicate glass (BPSG) or phosphosilicate glass (PSG); forming a nitride layer over said insulating layer; forming a cap oxide layer over said nitride layer, said cap oxide layer being silicon dioxide having a higher reflow temperature than said insulating layer; patterning and etching said insulating layer, said nitride layer, and said cap oxide layer to correspond to the location of said contacts, thereby forming contact openings; patterning and etching said nitride layer and said cap oxide layer to correspond to the pattern of said interconnects, thereby forming interconnect openings; performing a reflow step to round the corners of said contact openings; and filling said interconnect openings and said contact openings with a conductive material.
Claim 10
Independent Claim
144 words
A method of forming a contact and interconnect structure over a substrate, the method comprising the steps of: forming an insulating layer on said substrate, said insulating layer formed from borophosphosilicate glass (BPSG) or phosphosilicate glass (PSG); forming a nitride layer over said insulating layer; forming a cap oxide layer over said nitride layer, said cap oxide layer being silicon dioxide having a higher reflow temperature than said insulating layer; patterning and etching said insulating layer, said nitride layer, and said cap oxide layer to correspond to the location of said contacts, thereby forming contact openings; patterning and etching said nitride layer and said cap oxide layer to correspond to the pattern of said interconnects, thereby forming interconnect openings; performing a reflow step to round the corners of said contact openings; and filling said interconnect openings and said contact openings with a conductive material.
Claim 11
Dependent Claim
21 words
The method of claim 8 further including the step of forming a liner oxide between said substrate and said insulating layer.
Claim 12
Dependent Claim
16 words
The method of claim 8 further including the step of polishing said insulating layer by CMP.
Claim 13
Dependent Claim
15 words
The method of claim 8 wherein said nitride layer is Si 3 N 4 .
Claim 14
Dependent Claim
23 words
The method of claim 8 wherein said reflow step is a RTP at 950° C. to 1100° C. for 10 to 30 seconds.
Claim 15
Dependent Claim
26 words
The method of claim 7 wherein said reflow step is an atmospheric pressure CVD step at 850° C. to 900° C. for 5 to 30 minutes.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-06-13 | 2003-12-13 | 2004-06-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-06-13 | 2007-12-13 | 2008-06-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-06-13 | 2011-12-13 | 2012-06-13 | $7700.00 | Window Closed / Lapsed |