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US6071819A Expired / Lapsed US ⏱️ 0.0 years remaining

Flexible skin incorporating mems technology

Assignee: California Institute of Technology
•
Filing: 1998-01-23
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Granted: 2000-06-06
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Expires: 2018-01-23
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Abstract

Abstract A flexible skin formed of silicon islands encapsulated in a polyimide film. The silicon islands preferably include a MEMS device and are connected together by a polyimide film (preferably about 1-100 μm thick). To create the silicon islands, silicon wafers are etched to a desirable thickness (preferably about 10-500 μm) by Si wet etching and then patterned from the back side by reactive ion etching (RIE).

Inventors

  • 👤 Yu-Chong Tai
  • 👤 Fukang Jiang
  • 👤 Chihming Ho

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 17:06
CPC Classifications
B; B81; B81B; B81B7/00; B81B7/0032; B81B7/0077; B81C; B81C1/00; B81C1/00015; B81C1/00222; B81C1/00246; H; H10; H10W; H10W90/00; H10W90/10

Claims Analysis

Total Claims: 7
Claim 1
Independent Claim 191 words
A method of manufacturing a flexible microelectronic device comprising: first etching a lower side of a wafer using a first caustic agent; depositing a first layer of aluminum on an upper side of the wafer; patterning the first layer of aluminum; depositing a first layer of polyimide on the upper side of the wafer, covering the first layer of aluminum; depositing a second layer of aluminum on the upper side of the wafer, covering the first layer of polyimide; depositing a second layer of polyimide on the upper side of the wafer, covering the second layer of aluminum; depositing a third layer of aluminum on the lower side of the wafer; patterning the third layer of aluminum; second etching the lower side of the wafer using the third layer of aluminum as a mask and the first layer of aluminum as an etch stop and using a less caustic agent than said first caustic agent, such that the wafer is divided into islands with gaps surrounding each island; and depositing a third layer of polyimide on the lower side of the wafer, such that the gaps are at least partially filled.
Claim 2
Independent Claim 191 words
A method of manufacturing a flexible microelectronic device comprising: first etching a lower side of a wafer using a first caustic agent; depositing a first layer of aluminum on an upper side of the wafer; patterning the first layer of aluminum; depositing a first layer of polyimide on the upper side of the wafer, covering the first layer of aluminum; depositing a second layer of aluminum on the upper side of the wafer, covering the first layer of polyimide; depositing a second layer of polyimide on the upper side of the wafer, covering the second layer of aluminum; depositing a third layer of aluminum on the lower side of the wafer; patterning the third layer of aluminum; second etching the lower side of the wafer using the third layer of aluminum as a mask and the first layer of aluminum as an etch stop and using a less caustic agent than said first caustic agent, such that the wafer is divided into islands with gaps surrounding each island; and depositing a third layer of polyimide on the lower side of the wafer, such that the gaps are at least partially filled.
Claim 3
Dependent Claim 12 words
The method of claim 1 where the first etching is TMAH etching.
Claim 4
Dependent Claim 12 words
The method of claim 1 where the first etching is KOH etching.
Claim 5
Dependent Claim 14 words
The method of claim 1 where the second etching is vertical reactive ion etching.
Claim 6
Dependent Claim 25 words
The method of claim 1 which further comprises forming at least one MEMS device on the upper side of at least one of the islands.
Claim 7
Dependent Claim 18 words
The method of claim 5 where at least one of the MEMS devices is a shear stress sensor.

References Cited (Backward Citations)

US4587719A Cited
US4634495A Cited
US5199298A Cited
US5511428A Cited
US5883310A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2003-06-06 2003-12-06 2004-06-06 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2007-06-06 2007-12-06 2008-06-06 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2011-06-06 2011-12-06 2012-06-06 $7700.00 Window Closed / Lapsed

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